CA2214109A1 - An improved laser ablateable material - Google Patents

An improved laser ablateable material Download PDF

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Publication number
CA2214109A1
CA2214109A1 CA002214109A CA2214109A CA2214109A1 CA 2214109 A1 CA2214109 A1 CA 2214109A1 CA 002214109 A CA002214109 A CA 002214109A CA 2214109 A CA2214109 A CA 2214109A CA 2214109 A1 CA2214109 A1 CA 2214109A1
Authority
CA
Canada
Prior art keywords
pdp
plasma
gas
chamber
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002214109A
Other languages
English (en)
French (fr)
Inventor
Meir Janai
Yoram Cassuto
Michael Stephen Silverstein
Sharone Zehavi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chip Express Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2214109A1 publication Critical patent/CA2214109A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
CA002214109A 1995-02-28 1996-02-27 An improved laser ablateable material Abandoned CA2214109A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL112,826 1995-02-28
IL11282695A IL112826A (en) 1995-02-28 1995-02-28 Method for settling a deposited plasma polymer layer

Publications (1)

Publication Number Publication Date
CA2214109A1 true CA2214109A1 (en) 1996-09-06

Family

ID=11067145

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002214109A Abandoned CA2214109A1 (en) 1995-02-28 1996-02-27 An improved laser ablateable material

Country Status (6)

Country Link
EP (1) EP0812477A4 (ko)
JP (1) JPH11502060A (ko)
KR (1) KR19980702598A (ko)
CA (1) CA2214109A1 (ko)
IL (1) IL112826A (ko)
WO (1) WO1996027212A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8268675B2 (en) * 2011-02-11 2012-09-18 Nordson Corporation Passivation layer for semiconductor device packaging
US10490402B2 (en) 2013-09-04 2019-11-26 Tokyo Electron Limited UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
GB2529620A (en) 2014-08-18 2016-03-02 Flexenable Ltd Patterning layer stacks for electronic devices
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
WO2018013976A1 (en) 2016-07-15 2018-01-18 Brewer Science Inc. Laser ablative dielectric material

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177474A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
DE3173581D1 (en) * 1980-10-28 1986-03-06 Toshiba Kk Masking process for semiconductor devices using a polymer film
US4374179A (en) * 1980-12-18 1983-02-15 Honeywell Inc. Plasma polymerized ethane for interlayer dielectric
JPS5893241A (ja) * 1981-11-30 1983-06-02 Sony Corp 半導体装置
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
ATE80955T1 (de) * 1984-06-20 1992-10-15 Gould Inc Laserverfahren zur photomaskenreparatur.
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
WO1989007285A1 (en) * 1988-01-29 1989-08-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
US5470661A (en) * 1993-01-07 1995-11-28 International Business Machines Corporation Diamond-like carbon films from a hydrocarbon helium plasma
US5302547A (en) * 1993-02-08 1994-04-12 General Electric Company Systems for patterning dielectrics by laser ablation
WO1995006900A1 (fr) * 1993-09-03 1995-03-09 Hitachi, Ltd. Procede et appareil de realisation de motifs

Also Published As

Publication number Publication date
IL112826A (en) 1998-09-24
EP0812477A1 (en) 1997-12-17
KR19980702598A (ko) 1998-08-05
JPH11502060A (ja) 1999-02-16
EP0812477A4 (en) 1998-10-07
WO1996027212A1 (en) 1996-09-06
IL112826A0 (en) 1995-05-26

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Legal Events

Date Code Title Description
FZDE Discontinued