IE872671L - A method for selective intermixing of layered structures composed of thin solid films - Google Patents
A method for selective intermixing of layered structures composed of thin solid filmsInfo
- Publication number
- IE872671L IE872671L IE872671A IE267187A IE872671L IE 872671 L IE872671 L IE 872671L IE 872671 A IE872671 A IE 872671A IE 267187 A IE267187 A IE 267187A IE 872671 L IE872671 L IE 872671L
- Authority
- IE
- Ireland
- Prior art keywords
- intermixing
- thin solid
- layered structures
- solid films
- structures composed
- Prior art date
Links
Classifications
-
- H10P95/90—
-
- H10P95/00—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2258—Diffusion into or out of AIIIBV compounds
-
- H10P14/3824—
-
- H10P32/14—
-
- H10P32/174—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Magnetic Heads (AREA)
- Sampling And Sample Adjustment (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Coils Or Transformers For Communication (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Junction Field-Effect Transistors (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/916,818 US4731338A (en) | 1986-10-09 | 1986-10-09 | Method for selective intermixing of layered structures composed of thin solid films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IE872671L true IE872671L (en) | 1988-04-09 |
Family
ID=25437882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE872671A IE872671L (en) | 1986-10-09 | 1987-10-06 | A method for selective intermixing of layered structures composed of thin solid films |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4731338A (OSRAM) |
| EP (1) | EP0264222B1 (OSRAM) |
| JP (1) | JPS63119591A (OSRAM) |
| KR (1) | KR880005660A (OSRAM) |
| CN (1) | CN1012405B (OSRAM) |
| AT (1) | ATE102398T1 (OSRAM) |
| AU (1) | AU592019B2 (OSRAM) |
| CA (1) | CA1277439C (OSRAM) |
| DE (1) | DE3789187T2 (OSRAM) |
| IE (1) | IE872671L (OSRAM) |
| IN (1) | IN171245B (OSRAM) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2544378B2 (ja) * | 1987-03-25 | 1996-10-16 | 株式会社日立製作所 | 光半導体装置 |
| GB2206233B (en) * | 1987-06-23 | 1990-09-05 | British Gas Plc | Miniature thermoelectric converters |
| US4817102A (en) * | 1988-04-18 | 1989-03-28 | Maurer Larry D | Acousto-electromagnetic hologistic resonant system |
| US5191784A (en) * | 1989-12-28 | 1993-03-09 | Siemens Corporate Research, Inc. | Opto-electronic gas sensor |
| US5107316A (en) * | 1989-12-28 | 1992-04-21 | Siemens Corporate Research, Inc. | Catoptrical opto-electronic gas sensor |
| US5081633A (en) * | 1990-05-31 | 1992-01-14 | Applied Solar Energy Corporation | Semiconductor laser diode |
| US6539725B2 (en) * | 2001-02-09 | 2003-04-01 | Bsst Llc | Efficiency thermoelectrics utilizing thermal isolation |
| US7946120B2 (en) | 2001-02-09 | 2011-05-24 | Bsst, Llc | High capacity thermoelectric temperature control system |
| US7231772B2 (en) * | 2001-02-09 | 2007-06-19 | Bsst Llc. | Compact, high-efficiency thermoelectric systems |
| US6959555B2 (en) * | 2001-02-09 | 2005-11-01 | Bsst Llc | High power density thermoelectric systems |
| US7942010B2 (en) | 2001-02-09 | 2011-05-17 | Bsst, Llc | Thermoelectric power generating systems utilizing segmented thermoelectric elements |
| US7273981B2 (en) * | 2001-02-09 | 2007-09-25 | Bsst, Llc. | Thermoelectric power generation systems |
| US6672076B2 (en) | 2001-02-09 | 2004-01-06 | Bsst Llc | Efficiency thermoelectrics utilizing convective heat flow |
| JP2004537708A (ja) * | 2001-08-07 | 2004-12-16 | ビーエスエスティー エルエルシー | 熱電気式個人用環境調整機器 |
| US8490412B2 (en) | 2001-08-07 | 2013-07-23 | Bsst, Llc | Thermoelectric personal environment appliance |
| US6812395B2 (en) * | 2001-10-24 | 2004-11-02 | Bsst Llc | Thermoelectric heterostructure assemblies element |
| SG99970A1 (en) * | 2002-04-05 | 2003-11-27 | Inst Materials Research & Eng | Method for forming a modified semiconductor having a plurality of band gaps |
| US7847179B2 (en) * | 2005-06-06 | 2010-12-07 | Board Of Trustees Of Michigan State University | Thermoelectric compositions and process |
| US7608777B2 (en) * | 2005-06-28 | 2009-10-27 | Bsst, Llc | Thermoelectric power generator with intermediate loop |
| US7952015B2 (en) | 2006-03-30 | 2011-05-31 | Board Of Trustees Of Michigan State University | Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements |
| US20090235969A1 (en) * | 2008-01-25 | 2009-09-24 | The Ohio State University Research Foundation | Ternary thermoelectric materials and methods of fabrication |
| US8640466B2 (en) | 2008-06-03 | 2014-02-04 | Bsst Llc | Thermoelectric heat pump |
| US20100024859A1 (en) * | 2008-07-29 | 2010-02-04 | Bsst, Llc. | Thermoelectric power generator for variable thermal power source |
| US9178128B2 (en) | 2011-11-17 | 2015-11-03 | Gentherm Incorporated | Thermoelectric devices with interface materials and methods of manufacturing the same |
| US11223004B2 (en) | 2018-07-30 | 2022-01-11 | Gentherm Incorporated | Thermoelectric device having a polymeric coating |
| EP3745471A1 (en) * | 2019-05-31 | 2020-12-02 | OSRAM Opto Semiconductors GmbH | Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency |
| DE102021104685A1 (de) | 2021-02-26 | 2022-09-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4318752A (en) * | 1980-05-16 | 1982-03-09 | Bell Telephone Laboratories, Incorporated | Heterojunction semiconductor laser fabrication utilizing laser radiation |
| FR2504727A1 (fr) * | 1981-04-28 | 1982-10-29 | Commissariat Energie Atomique | Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel |
| DE3276979D1 (en) * | 1981-05-06 | 1987-09-17 | Univ Illinois | Method of forming wide bandgap region within multilayer semiconductors |
| US4511408A (en) * | 1982-04-22 | 1985-04-16 | The Board Of Trustees Of The University Of Illinois | Semiconductor device fabrication with disordering elements introduced into active region |
| JPS58112326A (ja) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | 複合ビ−ムアニ−ル方法 |
| US4639275A (en) * | 1982-04-22 | 1987-01-27 | The Board Of Trustees Of The University Of Illinois | Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor |
| AU1859783A (en) * | 1983-05-23 | 1984-11-29 | Katz, B.B. | Annealing implanted semiconductors by lasers |
| US4585491A (en) * | 1983-09-02 | 1986-04-29 | Xerox Corporation | Wavelength tuning of quantum well lasers by thermal annealing |
| US4637122A (en) * | 1983-09-19 | 1987-01-20 | Honeywell Inc. | Integrated quantum well lasers for wavelength division multiplexing |
| JPH06105718B2 (ja) * | 1984-06-05 | 1994-12-21 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JPS60262417A (ja) * | 1984-06-08 | 1985-12-25 | Nec Corp | 半導体結晶の製造方法 |
| US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
| JPS61191089A (ja) * | 1985-02-20 | 1986-08-25 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US4654090A (en) * | 1985-09-13 | 1987-03-31 | Xerox Corporation | Selective disordering of well structures by laser annealing |
| JPS62257782A (ja) * | 1986-05-01 | 1987-11-10 | Mitsubishi Electric Corp | 半導体の加工方法 |
-
1986
- 1986-10-09 US US06/916,818 patent/US4731338A/en not_active Expired - Lifetime
-
1987
- 1987-10-06 IE IE872671A patent/IE872671L/xx unknown
- 1987-10-06 KR KR870011156A patent/KR880005660A/ko not_active Withdrawn
- 1987-10-06 IN IN875/DEL/87A patent/IN171245B/en unknown
- 1987-10-06 CA CA000548660A patent/CA1277439C/en not_active Expired - Fee Related
- 1987-10-07 DE DE3789187T patent/DE3789187T2/de not_active Expired - Fee Related
- 1987-10-07 EP EP87308868A patent/EP0264222B1/en not_active Expired - Lifetime
- 1987-10-07 AT AT87308868T patent/ATE102398T1/de not_active IP Right Cessation
- 1987-10-08 AU AU79466/87A patent/AU592019B2/en not_active Ceased
- 1987-10-09 JP JP62256117A patent/JPS63119591A/ja active Pending
- 1987-10-09 CN CN87106894A patent/CN1012405B/zh not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CN1012405B (zh) | 1991-04-17 |
| ATE102398T1 (de) | 1994-03-15 |
| EP0264222B1 (en) | 1994-03-02 |
| IN171245B (OSRAM) | 1992-08-22 |
| KR880005660A (ko) | 1988-06-29 |
| EP0264222A3 (en) | 1989-08-16 |
| AU592019B2 (en) | 1989-12-21 |
| CN87106894A (zh) | 1988-04-20 |
| AU7946687A (en) | 1988-04-14 |
| DE3789187T2 (de) | 1994-10-06 |
| CA1277439C (en) | 1990-12-04 |
| EP0264222A2 (en) | 1988-04-20 |
| DE3789187D1 (de) | 1994-04-07 |
| JPS63119591A (ja) | 1988-05-24 |
| US4731338A (en) | 1988-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IE872671L (en) | A method for selective intermixing of layered structures composed of thin solid films | |
| AU4922685A (en) | Improvements in prefabricated modules, and the use thereof in the building industry | |
| DE3575363D1 (de) | Halbleiter mit flachen, hyperabrupt dotierten gebieten und verfahren zu ihrer herstellung unter verwendung ionenimplantierter stoerstoffe. | |
| WO2000046045A3 (en) | Method for forming design in a layered panel using a laser | |
| IL84712A (en) | Composite polyester films having improved adhesiveness and their production | |
| AU560217B2 (en) | Method of making electrode | |
| ES2000478A6 (es) | Accesorio decorativo y metodo para formarlo | |
| JPS548672A (en) | Production of polyester film | |
| JPS55100059A (en) | Linear step motor | |
| JPS649255A (en) | Modified polyolefin composition for bonding | |
| RU92011745A (ru) | Способ изготовления трехмерных изделий из порошковых материалов | |
| EP0028867A3 (en) | Composites of water-hardening substance and organic film networks and method of producing these composites | |
| JPS6487344A (en) | Lamination with high linear shearing property | |
| DE1479233A1 (de) | Verfahren zur Herstellung von Kunststoffverblendtafeln mit Verankerungselementen | |
| FR2142759A1 (en) | Two layer composites - with slots in the face of the weaker layer to accommodate relative strains | |
| JPS5278391A (en) | Semiconductor laser element | |
| JPS5429380A (en) | Manufacture of composite sheet | |
| ATA396273A (de) | Verfahren zur herstellung von copolymeren mit einem gehalt an acrylnitril und styrol | |
| JPS5571309A (en) | Electrode forming method | |
| DE7530754U (de) | Verbundfolie zur isolation von gegenstaenden gegen waermeaustausch | |
| JPS5749225A (en) | Single-crystallizing method for non-single crystalline semiconductor layer | |
| JPS53130995A (en) | Radar system of mono pulse phased array | |
| JPS51147577A (en) | Inorganic fiberboard | |
| JPS5645094A (en) | Manufacturing of semiconductor laser element | |
| JPS5721215A (en) | Slotting method of slotted nut |