HUE028880T2 - Paszta és eljárás elektronikus alkotórészek összekapcsolására egy hordozóval - Google Patents
Paszta és eljárás elektronikus alkotórészek összekapcsolására egy hordozóval Download PDFInfo
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- HUE028880T2 HUE028880T2 HUE11007634A HUE11007634A HUE028880T2 HU E028880 T2 HUE028880 T2 HU E028880T2 HU E11007634 A HUE11007634 A HU E11007634A HU E11007634 A HUE11007634 A HU E11007634A HU E028880 T2 HUE028880 T2 HU E028880T2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
- B23K35/3618—Carboxylic acids or salts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83455—Nickel [Ni] as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Conductive Materials (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Powder Metallurgy (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Claims (4)
- II iUARÁS elektronikusalkötörEszek összekapcsolására egy hordozóval SZABADALMI IGÉNYPONTOK 1 .:|«upAtA Íszloterező; sinter) paszta, amely a köveseiket tartalmazza: {ej iêmPszôîÂk amelyek a következők kézül yáisszihaiékki: rék, ezüst, nfeiès aiominitmti fés^öcskék; (b) tegaSäÄsQy aktivster, amely hordoz tsgelébb két prfcöhssv egységeim molekulában; As íc) diszperziós közeg. 2-.M 1. igénypont szerinti paszta, azzal llfôrég»k$& ezösf réspöskék, I, Az 1. vagy 2. igényijei szsdati íiSiszía, azzal |a|!:&m82VA> bogy áz aktívéternak az elbomlási {dörmmpsitioni pon^s: a; :1:QüDG és IPÔG közötti tartományban ven.
- 4. Az 1>3. igénypontok bármelyiké szëfibif paszta, azzal jöílame^apbogy az akövátör a kővetkezők Közül váiesztbatö ki: dikafbspsavak ééii^mpteíípe vitt (comptazadídikarbonsavak, S< Az 14. igénypontok bármelyike széiioti paszta, ami JsiísmszYé, hogy az aktivster a következők köz® választható ki: maionsay maieinssv. dimetil-ma'onssv és oxáisav.
- 6. Az t-5. Igényppóiok: bármaiyik® szgönti paszta, mai jellemezve, hogy a diszperziós közeg tartsimaz -agy alifás szénhidrogén vegyúteíet.
- 7. Eljárás legalább egy elektronlkes alkotórész összekapcsolására legaláDb egy hordozóhoz egy érintkező régión -contact region) keraszp, ahol a legalább agy említett érintkező régió iartaimaz egy nem-nemesfémet; az eljárás a következő íépésekaltaríaimazzs: $ szoSgaitatank egy bótdozóí fssisfcais)* :^Â^datk^fé§ié|iy'i^Âbâ'^y ótekirsnikps aíkotóreszL amelynek van egy ntásodik #Äez§ régiója, ahsí az ensíiótt iriÄzb régiók legalább agyike tadaíshsosgy ngnvnemesÄbt; pi szsigáitatuhk agy pasztát amely a kdÄeztotförÄszzg· {ajfémrészecskók. ametpk a következők közül választhatok ki: r%. ezüst nikkel és aluminium részecskék; (bbtepiább dgyaktivátot amely hordoz isgaipfc kél karbonsav egységei a moiekatában; és (# diszperziós: közeg; fis) liaSakSinek egy éseflfez ahol a hordozó bise èrÂézô; régié|gí érintkezésbe hozztÉ az aiektfonlkas alkotórész második érintkező régióiéval a pasztán ikéresztüS; és |y) zaügor:itjuk|síníé?) a ezerkézetet, miközben olyan rnorielbaiékibiak ki, emaiylartsimazza iegaiêbb a: hordozót és az elektronikus aikötöfészt egyméssaitesszékettetésben a zsisgoritott {sintered) paszta réven, I. AT. Igénypont :szarioti altéras, azzá! jeílemezve, hogy az end tletf: érintkező régiek legalább agytke az elekavtnikns aikoioréSzoek vagy la hordozónak pszfatiaé (tegml) alkotórésze, B. A 7, vagy I, igénypont szerinti epres, azzal pfemesve, hogy a nemmemas fém réz, és azsktivátöt a követkgÄ köztit választható ki: maion sav, maleinsav és ozáisav. tO, A 7, vagy igénypont szerinij é|árá$, azzal jéíjáibézye, hogy a nommâmes fém nAkeí, és az aktivál a kő vétkezők köz®; yéiaázitatö ki: dimetií-maionsav é$ okáisav.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11007634.6A EP2572814B1 (de) | 2011-09-20 | 2011-09-20 | Paste und Verfahren zum Verbinden von elektronischem Bauelement mit Substrat |
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Publication Number | Publication Date |
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HUE028880T2 true HUE028880T2 (hu) | 2017-01-30 |
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HUE11007634A HUE028880T2 (hu) | 2011-09-20 | 2011-09-20 | Paszta és eljárás elektronikus alkotórészek összekapcsolására egy hordozóval |
Country Status (9)
Country | Link |
---|---|
US (1) | US20130068373A1 (hu) |
EP (1) | EP2572814B1 (hu) |
JP (2) | JP2013069687A (hu) |
KR (1) | KR101419126B1 (hu) |
CN (1) | CN103008910A (hu) |
HU (1) | HUE028880T2 (hu) |
PH (1) | PH12012000245A1 (hu) |
SG (1) | SG188764A1 (hu) |
TW (1) | TWI478178B (hu) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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SG11201608656PA (en) | 2014-05-05 | 2016-12-29 | Heraeus Deutschland Gmbh & Co Kg | Method for applying dried metal sintering compound by means of a transfer substrate onto a carrier for electronic components, corresponding carrier, and the use thereof for sintered connection to elec |
EP3174657B1 (de) | 2014-07-28 | 2021-07-14 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung eines silbersintermittels mit silberoxidoberflächen und seine verwendung in verfahren zum verbinden von bauelementen durch drucksintern |
EP2979783A1 (de) | 2014-07-28 | 2016-02-03 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Verbinden von Bauelementen durch Drucksintern |
EP3009211B1 (de) | 2015-09-04 | 2017-06-14 | Heraeus Deutschland GmbH & Co. KG | Metallpaste und deren verwendung zum verbinden von bauelementen |
CN107949447B (zh) * | 2015-09-07 | 2020-03-03 | 日立化成株式会社 | 接合用铜糊料、接合体的制造方法及半导体装置的制造方法 |
FR3041210B1 (fr) * | 2015-09-15 | 2017-09-15 | Sagem Defense Securite | Procede d'assemblage par frittage d'argent sans pression |
EP3154079A1 (de) * | 2015-10-08 | 2017-04-12 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum verbinden einer substratanordnung mit einem elektronikbauteil mit verwendung eines auf eine kontaktierungsmaterialschicht aufgebrachten vorfixiermittels, entsprechende substratanordnung und verfahren zu ihrem herstellen |
EP3401039A1 (de) | 2017-05-12 | 2018-11-14 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum verbinden von bauelementen mittels metallpaste |
EP3622554A1 (de) | 2017-05-12 | 2020-03-18 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum verbinden von bauelementen mittels metallpaste |
JPWO2021187362A1 (hu) * | 2020-03-19 | 2021-09-23 | ||
US11980935B2 (en) * | 2020-03-31 | 2024-05-14 | Mitsui Mining & Smelting Co., Ltd. | Copper particles and method for producing same |
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JP2993011B2 (ja) * | 1989-07-07 | 1999-12-20 | 株式会社村田製作所 | 回路素子 |
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JPH07132395A (ja) * | 1993-11-15 | 1995-05-23 | Showa Denko Kk | クリームはんだ |
US5674326A (en) * | 1994-09-21 | 1997-10-07 | Motorola, Inc. | Solder paste |
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JP3534684B2 (ja) * | 2000-07-10 | 2004-06-07 | Tdk株式会社 | 導電ペーストおよび外部電極とその製造方法 |
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GB2380964B (en) * | 2001-09-04 | 2005-01-12 | Multicore Solders Ltd | Lead-free solder paste |
JP3702418B2 (ja) * | 2002-03-07 | 2005-10-05 | 株式会社 東京第一商興 | ソルダペースト用フラックス及びソルダペースト |
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KR101046197B1 (ko) * | 2005-09-21 | 2011-07-04 | 니혼한다가부시끼가이샤 | 페이스트형 은입자 조성물, 고형상 은의 제조 방법, 고형상은, 접합 방법 및 인쇄 배선판의 제조 방법 |
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JP4981319B2 (ja) * | 2005-12-27 | 2012-07-18 | パナソニック株式会社 | 導電性ペーストおよびこれを用いた電子部品の実装方法 |
US7767032B2 (en) * | 2006-06-30 | 2010-08-03 | W.C. Heraeus Holding GmbH | No-clean low-residue solder paste for semiconductor device applications |
KR100829667B1 (ko) * | 2006-09-07 | 2008-05-16 | 엘지전자 주식회사 | 전극용 페이스트 조성물, 이를 이용하여 제조된 플라즈마디스플레이 패널의 상판구조 및 그 제조방법 |
JP4247801B2 (ja) * | 2006-11-24 | 2009-04-02 | ニホンハンダ株式会社 | ペースト状金属粒子組成物および接合方法 |
JP4735591B2 (ja) * | 2007-04-03 | 2011-07-27 | 株式会社日立製作所 | 導電パターン形成装置 |
DE102007046901A1 (de) | 2007-09-28 | 2009-04-09 | W.C. Heraeus Gmbh | Verfahren und Paste zur Kontaktierung von Metallflächen |
DE102009040078A1 (de) * | 2009-09-04 | 2011-03-10 | W.C. Heraeus Gmbh | Metallpaste mit CO-Vorläufern |
KR101651932B1 (ko) * | 2009-10-26 | 2016-08-30 | 한화케미칼 주식회사 | 카르복실산을 이용한 전도성 금속 박막의 제조방법 |
WO2012059974A1 (ja) * | 2010-11-01 | 2012-05-10 | Dowaエレクトロニクス株式会社 | 低温焼結性導電性ペーストおよびそれを用いた導電膜と導電膜の形成方法 |
-
2011
- 2011-09-20 HU HUE11007634A patent/HUE028880T2/hu unknown
- 2011-09-20 EP EP11007634.6A patent/EP2572814B1/de not_active Not-in-force
-
2012
- 2012-08-31 PH PH12012000245A patent/PH12012000245A1/en unknown
- 2012-09-05 TW TW101132412A patent/TWI478178B/zh not_active IP Right Cessation
- 2012-09-06 US US13/604,687 patent/US20130068373A1/en not_active Abandoned
- 2012-09-18 KR KR1020120103227A patent/KR101419126B1/ko not_active IP Right Cessation
- 2012-09-19 JP JP2012206006A patent/JP2013069687A/ja active Pending
- 2012-09-20 CN CN2012103509739A patent/CN103008910A/zh active Pending
- 2012-09-20 SG SG2012069878A patent/SG188764A1/en unknown
-
2016
- 2016-05-27 JP JP2016106418A patent/JP2016171085A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US20130068373A1 (en) | 2013-03-21 |
TW201320106A (zh) | 2013-05-16 |
TWI478178B (zh) | 2015-03-21 |
JP2016171085A (ja) | 2016-09-23 |
KR20130031213A (ko) | 2013-03-28 |
SG188764A1 (en) | 2013-04-30 |
CN103008910A (zh) | 2013-04-03 |
KR101419126B1 (ko) | 2014-07-11 |
EP2572814A1 (de) | 2013-03-27 |
EP2572814B1 (de) | 2016-03-30 |
JP2013069687A (ja) | 2013-04-18 |
PH12012000245A1 (en) | 2015-11-09 |
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