HU181030B - High voltage dielectrically insulated solid state switching device - Google Patents

High voltage dielectrically insulated solid state switching device Download PDF

Info

Publication number
HU181030B
HU181030B HU79WE614A HUWE000614A HU181030B HU 181030 B HU181030 B HU 181030B HU 79WE614 A HU79WE614 A HU 79WE614A HU WE000614 A HUWE000614 A HU WE000614A HU 181030 B HU181030 B HU 181030B
Authority
HU
Hungary
Prior art keywords
region
switching device
semiconductor
gate
semiconductor body
Prior art date
Application number
HU79WE614A
Other languages
German (de)
English (en)
Hungarian (hu)
Inventor
Adrian R Hartman
Joseph E Berthold
Terence J Riley
Peter W Shackle
Rae Alfred U Mac
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of HU181030B publication Critical patent/HU181030B/hu

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10W10/019—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H10W10/10—
    • H10W20/021—

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Electronic Switches (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HU79WE614A 1978-12-20 1979-12-10 High voltage dielectrically insulated solid state switching device HU181030B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202178A 1978-12-20 1978-12-20
US97202278A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20

Publications (1)

Publication Number Publication Date
HU181030B true HU181030B (en) 1983-05-30

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
HU79WE614A HU181030B (en) 1978-12-20 1979-12-10 High voltage dielectrically insulated solid state switching device

Country Status (18)

Country Link
JP (1) JPS6412106B2 (enExample)
KR (1) KR830002293B1 (enExample)
AU (1) AU529702B2 (enExample)
CH (1) CH659151A5 (enExample)
DD (1) DD147897A5 (enExample)
ES (1) ES487066A1 (enExample)
FR (1) FR2445026A1 (enExample)
GB (1) GB2049283B (enExample)
HU (1) HU181030B (enExample)
IE (1) IE48892B1 (enExample)
IL (1) IL58970A (enExample)
IN (1) IN153497B (enExample)
IT (1) IT1126603B (enExample)
NL (1) NL7920184A (enExample)
PL (1) PL220494A1 (enExample)
SE (1) SE446139B (enExample)
SG (1) SG32884G (enExample)
WO (1) WO1980001337A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
IT1151525B (it) * 1981-03-27 1986-12-24 Western Electric Co Interruttore a diodi comandati
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (enExample) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (enExample) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
SG32884G (en) 1985-02-08
AU5386679A (en) 1980-06-26
AU529702B2 (en) 1983-06-16
SE8005703L (sv) 1980-08-13
IT1126603B (it) 1986-05-21
IL58970A0 (en) 1980-03-31
JPS6412106B2 (enExample) 1989-02-28
NL7920184A (nl) 1980-10-31
KR830002293B1 (ko) 1983-10-21
IN153497B (enExample) 1984-07-21
IL58970A (en) 1982-07-30
GB2049283B (en) 1983-07-27
IT7928206A0 (it) 1979-12-19
FR2445026A1 (fr) 1980-07-18
SE446139B (sv) 1986-08-11
JPS55501079A (enExample) 1980-12-04
IE48892B1 (en) 1985-06-12
KR830001743A (ko) 1983-05-18
IE792474L (en) 1980-06-20
PL220494A1 (enExample) 1980-09-08
FR2445026B1 (enExample) 1983-08-19
GB2049283A (en) 1980-12-17
DD147897A5 (de) 1981-04-22
CH659151A5 (de) 1986-12-31
ES487066A1 (es) 1980-09-16
WO1980001337A1 (en) 1980-06-26

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Legal Events

Date Code Title Description
HU90 Patent valid on 900628