HU175524B - Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy - Google Patents

Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy

Info

Publication number
HU175524B
HU175524B HU76RA647A HURA000647A HU175524B HU 175524 B HU175524 B HU 175524B HU 76RA647 A HU76RA647 A HU 76RA647A HU RA000647 A HURA000647 A HU RA000647A HU 175524 B HU175524 B HU 175524B
Authority
HU
Hungary
Prior art keywords
integral
transistorami
strobirujuhhie
skhemy
skhema
Prior art date
Application number
HU76RA647A
Other languages
English (en)
Hungarian (hu)
Inventor
Andrew G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of HU175524B publication Critical patent/HU175524B/hu

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • H10D84/858Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
HU76RA647A 1975-06-11 1976-06-10 Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy HU175524B (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58587475A 1975-06-11 1975-06-11

Publications (1)

Publication Number Publication Date
HU175524B true HU175524B (hu) 1980-08-28

Family

ID=24343323

Family Applications (1)

Application Number Title Priority Date Filing Date
HU76RA647A HU175524B (hu) 1975-06-11 1976-06-10 Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy

Country Status (15)

Country Link
JP (1) JPS5234677A (en, 2012)
AU (1) AU497683B2 (en, 2012)
BE (1) BE842774A (en, 2012)
BR (1) BR7603615A (en, 2012)
CA (1) CA1057413A (en, 2012)
CH (1) CH620049A5 (en, 2012)
DE (1) DE2625576A1 (en, 2012)
FR (1) FR2314583A1 (en, 2012)
GB (1) GB1526503A (en, 2012)
HU (1) HU175524B (en, 2012)
IN (1) IN144541B (en, 2012)
IT (1) IT1079501B (en, 2012)
NL (1) NL7606272A (en, 2012)
SE (1) SE416599B (en, 2012)
YU (1) YU139376A (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (en, 2012) * 1969-03-25 1970-09-29
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
FR2129827B1 (en, 2012) * 1971-03-15 1976-09-03 Gen Electric
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5535869B2 (en, 2012) * 1972-05-15 1980-09-17
JPS4921080A (en, 2012) * 1972-06-15 1974-02-25

Also Published As

Publication number Publication date
BE842774A (nl) 1976-10-01
YU139376A (en) 1983-04-27
FR2314583B1 (en, 2012) 1982-09-17
DE2625576A1 (de) 1976-12-30
AU497683B2 (en) 1978-12-21
SE416599B (sv) 1981-01-19
GB1526503A (en) 1978-09-27
BR7603615A (pt) 1977-02-01
SE7606368L (sv) 1976-12-12
IT1079501B (it) 1985-05-13
FR2314583A1 (fr) 1977-01-07
JPS574105B2 (en, 2012) 1982-01-25
NL7606272A (nl) 1976-12-14
AU1467576A (en) 1977-12-15
IN144541B (en, 2012) 1978-05-13
CH620049A5 (en) 1980-10-31
CA1057413A (en) 1979-06-26
JPS5234677A (en) 1977-03-16

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