HK53287A - Method for lithographically fabricating devices - Google Patents

Method for lithographically fabricating devices

Info

Publication number
HK53287A
HK53287A HK532/87A HK53287A HK53287A HK 53287 A HK53287 A HK 53287A HK 532/87 A HK532/87 A HK 532/87A HK 53287 A HK53287 A HK 53287A HK 53287 A HK53287 A HK 53287A
Authority
HK
Hong Kong
Prior art keywords
fabricating devices
lithographically
lithographically fabricating
devices
fabricating
Prior art date
Application number
HK532/87A
Other languages
English (en)
Inventor
Abraham Katzir
Paul Robert Kolodner
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of HK53287A publication Critical patent/HK53287A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • G01N2021/3166—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths using separate detectors and filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/122—Kinetic analysis; determining reaction rate
    • G01N2201/1222—Endpoint determination; reaction time determination

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
HK532/87A 1983-05-06 1987-07-16 Method for lithographically fabricating devices HK53287A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/492,433 US4482424A (en) 1983-05-06 1983-05-06 Method for monitoring etching of resists by monitoring the flouresence of the unetched material

Publications (1)

Publication Number Publication Date
HK53287A true HK53287A (en) 1987-07-24

Family

ID=23956233

Family Applications (1)

Application Number Title Priority Date Filing Date
HK532/87A HK53287A (en) 1983-05-06 1987-07-16 Method for lithographically fabricating devices

Country Status (9)

Country Link
US (1) US4482424A (fr)
JP (1) JPS59208724A (fr)
KR (1) KR930000900B1 (fr)
CA (1) CA1209723A (fr)
DE (1) DE3416819A1 (fr)
FR (1) FR2545622B1 (fr)
GB (1) GB2139151B (fr)
HK (1) HK53287A (fr)
NL (1) NL189631C (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
US4599134A (en) * 1985-06-10 1986-07-08 Ibm Corporation Plasma etching with tracer
DE4016211A1 (de) * 1990-05-19 1991-11-21 Convac Gmbh Verfahren zur ueberwachung und steuerung eines aetzvorgangs und vorrichtung hierfuer
US5227001A (en) * 1990-10-19 1993-07-13 Integrated Process Equipment Corporation Integrated dry-wet semiconductor layer removal apparatus and method
DE4106313A1 (de) * 1991-02-28 1992-09-03 Heidelberger Druckmasch Ag Verfahren und vorrichtung zur ermittlung der menge beziehungsweise der schichtdicke eines fluids
JP3010395B2 (ja) * 1991-09-04 2000-02-21 日本シイエムケイ株式会社 プリント配線板の製造方法
US5254502A (en) * 1992-03-27 1993-10-19 Principia Optics, Inc. Method for making a laser screen for a cathode-ray tube
US5264328A (en) * 1992-04-24 1993-11-23 International Business Machines Corporation Resist development endpoint detection for X-ray lithography
TW280083B (fr) * 1993-03-04 1996-07-01 Tokyo Electron Co Ltd
US7102737B2 (en) * 1997-11-04 2006-09-05 Micron Technology, Inc. Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
US5969805A (en) * 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
US6704107B1 (en) 1997-11-04 2004-03-09 Micron Technology, Inc. Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
US6174407B1 (en) 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
US6335531B1 (en) * 1999-04-06 2002-01-01 Micron Technology, Inc. Modification of resist and/or resist processing with fluorescence detection
US6136719A (en) * 1999-04-30 2000-10-24 Lsi Logic Corporation Method and arrangement for fabricating a semiconductor device
US6218203B1 (en) * 1999-06-28 2001-04-17 Advantest Corp. Method of producing a contact structure
WO2002040970A1 (fr) 2000-11-15 2002-05-23 Real Time Metrology, Inc. Procédé et dispositif optique d'examen d'objets plans de grande superficie
US6809809B2 (en) * 2000-11-15 2004-10-26 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6849859B2 (en) * 2001-03-21 2005-02-01 Euv Limited Liability Corporation Fabrication of precision optics using an imbedded reference surface
US20060154180A1 (en) * 2005-01-07 2006-07-13 Kannurpatti Anandkumar R Imaging element for use as a recording element and process of using the imaging element
US7846639B2 (en) 2006-06-30 2010-12-07 E. I. Du Pont De Nemours And Company Imaging element having a photoluminescent tag and process of using the imaging element to form a recording element
JP5499504B2 (ja) * 2009-03-24 2014-05-21 凸版印刷株式会社 薄膜検査方法及び薄膜検査装置
WO2011027882A1 (fr) * 2009-09-07 2011-03-10 東洋合成工業株式会社 Composition photodurcissable pour la formation de motifs et procédé de mesure de l'épaisseur de film à l'aide de cette dernière
DE102020201884B4 (de) 2019-02-15 2021-12-23 Virtek Vision International Ulc Verfahren von detektieren richtiger orientierung von materialapplikation
TWI790591B (zh) * 2021-04-12 2023-01-21 環球晶圓股份有限公司 晶圓加工系統及其重工方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS513173A (ja) * 1974-06-25 1976-01-12 Matsushita Electric Ind Co Ltd Hakumakupataanseizosochi
CA1071579A (fr) * 1976-09-13 1980-02-12 Northern Telecom Limited Regulation du point final en gravure au plasma
JPS5345180A (en) * 1976-10-06 1978-04-22 Hitachi Ltd Photoetching method
DE2728361C2 (de) * 1977-06-23 1981-09-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Feststellen eines vorgebbaren Endzustands eines Entwicklungs- oder Ätzvorgangs
JPS6019138B2 (ja) * 1977-09-22 1985-05-14 株式会社日立製作所 フオトエツチングにおける現像状態検査方法
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4246060A (en) * 1979-01-02 1981-01-20 Motorola, Inc. Plasma development process controller
JPS5613730A (en) * 1979-07-13 1981-02-10 Fujitsu Ltd Etching method
JPS56108234A (en) * 1980-01-31 1981-08-27 Fujitsu Ltd Etching treatment method
US4377436A (en) * 1980-05-13 1983-03-22 Bell Telephone Laboratories, Incorporated Plasma-assisted etch process with endpoint detection
JPS5726438A (en) * 1980-07-23 1982-02-12 Hitachi Ltd Etching measuring apparatus
JPS5747874A (en) * 1980-09-02 1982-03-18 Fujitsu Ltd Detection of end point of dry etching reaction
JPS5772147A (en) * 1980-10-22 1982-05-06 Mitsubishi Electric Corp Method and device for development
JPS57138634A (en) * 1981-02-20 1982-08-27 Hitachi Ltd X-ray sensitive resin and formation of ultrathin line pattern using this resin
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes

Also Published As

Publication number Publication date
GB8411122D0 (en) 1984-06-06
NL189631C (nl) 1993-06-01
GB2139151B (en) 1986-07-30
US4482424A (en) 1984-11-13
KR840009174A (ko) 1984-12-24
GB2139151A (en) 1984-11-07
JPS59208724A (ja) 1984-11-27
CA1209723A (fr) 1986-08-12
NL189631B (nl) 1993-01-04
FR2545622A1 (fr) 1984-11-09
DE3416819A1 (de) 1984-11-08
DE3416819C2 (fr) 1991-02-14
KR930000900B1 (ko) 1993-02-11
FR2545622B1 (fr) 1987-04-17
NL8401430A (nl) 1984-12-03

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)