HK20091A - Dynamic random access memory array - Google Patents

Dynamic random access memory array

Info

Publication number
HK20091A
HK20091A HK200/91A HK20091A HK20091A HK 20091 A HK20091 A HK 20091A HK 200/91 A HK200/91 A HK 200/91A HK 20091 A HK20091 A HK 20091A HK 20091 A HK20091 A HK 20091A
Authority
HK
Hong Kong
Prior art keywords
random access
access memory
memory array
dynamic random
dynamic
Prior art date
Application number
HK200/91A
Other languages
English (en)
Inventor
Jun Dong-Soo
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of HK20091A publication Critical patent/HK20091A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
HK200/91A 1986-11-24 1991-03-21 Dynamic random access memory array HK20091A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009912A KR890003372B1 (ko) 1986-11-24 1986-11-24 다이나믹 랜덤 액세스 메모리 어레이

Publications (1)

Publication Number Publication Date
HK20091A true HK20091A (en) 1991-03-28

Family

ID=19253555

Family Applications (1)

Application Number Title Priority Date Filing Date
HK200/91A HK20091A (en) 1986-11-24 1991-03-21 Dynamic random access memory array

Country Status (6)

Country Link
JP (1) JPS63155493A (ko)
KR (1) KR890003372B1 (ko)
DE (1) DE3739804A1 (ko)
GB (1) GB2200004B (ko)
HK (1) HK20091A (ko)
SG (1) SG7491G (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2534700B2 (ja) * 1987-04-02 1996-09-18 日本電気株式会社 半導体記憶装置
JPH0261889A (ja) * 1988-08-25 1990-03-01 Nec Corp 半導体メモリ
JP2650377B2 (ja) * 1988-12-13 1997-09-03 富士通株式会社 半導体集積回路
KR100223890B1 (ko) * 1996-12-31 1999-10-15 구본준 반도체 메모리 소자 및 그의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111183A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd ダイナミツクｒａｍ集積回路装置
JPH0760858B2 (ja) * 1984-10-26 1995-06-28 三菱電機株式会社 半導体メモリ装置
JPS61194771A (ja) * 1985-02-25 1986-08-29 Hitachi Ltd 半導体記憶装置
JPH0666442B2 (ja) * 1985-03-08 1994-08-24 三菱電機株式会社 半導体メモリ装置

Also Published As

Publication number Publication date
GB2200004B (en) 1990-09-26
GB2200004A (en) 1988-07-20
SG7491G (en) 1991-04-05
KR890003372B1 (ko) 1989-09-19
GB8727456D0 (en) 1987-12-23
KR880006697A (ko) 1988-07-23
JPS63155493A (ja) 1988-06-28
DE3739804A1 (de) 1988-06-23

Similar Documents

Publication Publication Date Title
EP0175378A3 (en) Dynamic random access memory (dram)
KR910004732B1 (en) Dynamic random access memory having improved refresh timing
GB2225657B (en) Random access memory system
EP0236089A3 (en) Dynamic random access memory having trench capacitor
EP0278155A3 (en) Dynamic random access memory
GB8301839D0 (en) Dynamic random access memory
GB2187006B (en) Random access memory apparatus
GB2138230B (en) Dynamic random access memory arrangements
EP0283964A3 (en) Dynamic random access memory device having a plurality of improved one-transistor type memory cells
EP0325026A3 (en) Dynamic random-access memory
GB2212683B (en) Static random access memories
EP0258715A3 (en) Static random access memory having bi-cmos construction
KR930007835B1 (en) Dynamic random access memory device
EP0142376A3 (en) Dynamic random access memory
EP0470742A3 (en) Dynamic random access memory
EP0177816A3 (en) Non-volatile dynamic random access memory cell
EP0169360A3 (en) Random access memory
KR950001424B1 (en) 3-transistor dynamic random access memory
DE3279139D1 (en) Random access memory array
GB2185165B (en) Optoelectronic dynamic random access memory system
GB2223127B (en) Static random access memory
GB2204756B (en) Dynamic random access memory
GB2199695B (en) Dynamic random access memory with selective well biasing
EP0214561A3 (en) Random access memory
GB2212637B (en) Dynamic type memories and memory structures

Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20061124