HK133393A - Fet structure arrangement having low on resistance - Google Patents
Fet structure arrangement having low on resistanceInfo
- Publication number
- HK133393A HK133393A HK1333/93A HK133393A HK133393A HK 133393 A HK133393 A HK 133393A HK 1333/93 A HK1333/93 A HK 1333/93A HK 133393 A HK133393 A HK 133393A HK 133393 A HK133393 A HK 133393A
- Authority
- HK
- Hong Kong
- Prior art keywords
- resistance
- low
- structure arrangement
- fet structure
- fet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Networks Using Active Elements (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/027,366 US4775879A (en) | 1987-03-18 | 1987-03-18 | FET structure arrangement having low on resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK133393A true HK133393A (en) | 1993-12-10 |
Family
ID=21837303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK1333/93A HK133393A (en) | 1987-03-18 | 1993-12-02 | Fet structure arrangement having low on resistance |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4775879A (ko) |
| EP (1) | EP0282705B1 (ko) |
| JP (1) | JPH0734472B2 (ko) |
| KR (1) | KR940010918B1 (ko) |
| DE (1) | DE3862221D1 (ko) |
| HK (1) | HK133393A (ko) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179034A (en) * | 1987-08-24 | 1993-01-12 | Hitachi, Ltd. | Method for fabricating insulated gate semiconductor device |
| JPH0766968B2 (ja) * | 1987-08-24 | 1995-07-19 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| JPH0244413A (ja) * | 1988-08-05 | 1990-02-14 | Nec Corp | 定電流供給回路 |
| TW399774U (en) * | 1989-07-03 | 2000-07-21 | Gen Electric | FET, IGBT and MCT structures to enhance operating characteristics |
| DE69029180T2 (de) * | 1989-08-30 | 1997-05-22 | Siliconix Inc | Transistor mit Spannungsbegrenzungsanordnung |
| US5317184A (en) * | 1992-11-09 | 1994-05-31 | Harris Corporation | Device and method for improving current carrying capability in a semiconductor device |
| US5703389A (en) * | 1995-02-24 | 1997-12-30 | Motorola, Inc. | Vertical IGFET configuration having low on-resistance and method |
| CA2230768C (en) | 1997-02-28 | 2007-02-13 | John W. Safian | Multilayer container package |
| US7279743B2 (en) | 2003-12-02 | 2007-10-09 | Vishay-Siliconix | Closed cell trench metal-oxide-semiconductor field effect transistor |
| US8183629B2 (en) * | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
| US8471390B2 (en) * | 2006-05-12 | 2013-06-25 | Vishay-Siliconix | Power MOSFET contact metallization |
| US8368126B2 (en) | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
| US9306056B2 (en) | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
| US9312382B2 (en) | 2014-07-22 | 2016-04-12 | Empire Technology Development Llc | High voltage transistor device with reduced characteristic on resistance |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4152714A (en) * | 1978-01-16 | 1979-05-01 | Honeywell Inc. | Semiconductor apparatus |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
| JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
| JPS58171861A (ja) * | 1982-04-01 | 1983-10-08 | Toshiba Corp | 半導体装置 |
| JPS5939071A (ja) * | 1982-08-27 | 1984-03-03 | Nissan Motor Co Ltd | 縦型パワ−ｍｏｓ・ｆｅｔ |
| US4532534A (en) * | 1982-09-07 | 1985-07-30 | Rca Corporation | MOSFET with perimeter channel |
| FR2537780A1 (fr) * | 1982-12-08 | 1984-06-15 | Radiotechnique Compelec | Dispositif mos fet de puissance a structure plane multicellulaire |
| US4789882A (en) * | 1983-03-21 | 1988-12-06 | International Rectifier Corporation | High power MOSFET with direct connection from connection pads to underlying silicon |
| NL8302092A (nl) * | 1983-06-13 | 1985-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
| JPS6010677A (ja) * | 1983-06-30 | 1985-01-19 | Nissan Motor Co Ltd | 縦型ｍｏｓトランジスタ |
| US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
| JPS6180859A (ja) * | 1984-09-28 | 1986-04-24 | Hitachi Ltd | パワ−ｍｏｓｆｅｔ |
| JPS61168263A (ja) * | 1985-01-20 | 1986-07-29 | Tdk Corp | 半導体装置 |
-
1987
- 1987-03-18 US US07/027,366 patent/US4775879A/en not_active Expired - Lifetime
-
1988
- 1988-01-28 EP EP88101228A patent/EP0282705B1/en not_active Expired - Lifetime
- 1988-01-28 DE DE8888101228T patent/DE3862221D1/de not_active Expired - Lifetime
- 1988-03-02 JP JP63047660A patent/JPH0734472B2/ja not_active Expired - Lifetime
- 1988-03-15 KR KR1019880002697A patent/KR940010918B1/ko not_active IP Right Cessation
-
1993
- 1993-12-02 HK HK1333/93A patent/HK133393A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR940010918B1 (ko) | 1994-11-19 |
| EP0282705A2 (en) | 1988-09-21 |
| JPS63237579A (ja) | 1988-10-04 |
| KR880011933A (ko) | 1988-10-31 |
| JPH0734472B2 (ja) | 1995-04-12 |
| DE3862221D1 (de) | 1991-05-08 |
| US4775879A (en) | 1988-10-04 |
| EP0282705A3 (en) | 1989-03-08 |
| EP0282705B1 (en) | 1991-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |