HK1256963A1 - 全模製的微型化半導體模塊 - Google Patents

全模製的微型化半導體模塊

Info

Publication number
HK1256963A1
HK1256963A1 HK18116103.0A HK18116103A HK1256963A1 HK 1256963 A1 HK1256963 A1 HK 1256963A1 HK 18116103 A HK18116103 A HK 18116103A HK 1256963 A1 HK1256963 A1 HK 1256963A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor module
miniaturized semiconductor
fully molded
molded
fully
Prior art date
Application number
HK18116103.0A
Other languages
English (en)
Chinese (zh)
Inventor
克里斯多佛‧M‧斯坎倫
提莫澤‧L‧奧森
Original Assignee
德卡科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/354,447 external-priority patent/US9831170B2/en
Application filed by 德卡科技公司 filed Critical 德卡科技公司
Publication of HK1256963A1 publication Critical patent/HK1256963A1/zh

Links

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • HELECTRICITY
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    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385Assembly of a plurality of insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386Geometry or layout of the interconnection structure
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    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19Manufacturing methods of high density interconnect preforms
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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    • H01L2225/06503Stacked arrangements of devices
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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    • H01L2924/30Technical effects
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    • H01L2924/3025Electromagnetic shielding
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    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
HK18116103.0A 2015-11-20 2018-12-14 全模製的微型化半導體模塊 HK1256963A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562258040P 2015-11-20 2015-11-20
US15/354,447 US9831170B2 (en) 2011-12-30 2016-11-17 Fully molded miniaturized semiconductor module
PCT/US2016/062940 WO2017087899A1 (en) 2015-11-20 2016-11-18 Fully molded miniaturized semiconductor module

Publications (1)

Publication Number Publication Date
HK1256963A1 true HK1256963A1 (zh) 2019-10-04

Family

ID=58719240

Family Applications (1)

Application Number Title Priority Date Filing Date
HK18116103.0A HK1256963A1 (zh) 2015-11-20 2018-12-14 全模製的微型化半導體模塊

Country Status (5)

Country Link
KR (1) KR102127774B1 (ko)
CN (1) CN108307661B (ko)
HK (1) HK1256963A1 (ko)
TW (1) TWI674658B (ko)
WO (1) WO2017087899A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9831170B2 (en) * 2011-12-30 2017-11-28 Deca Technologies, Inc. Fully molded miniaturized semiconductor module
KR102563424B1 (ko) * 2017-11-02 2023-08-07 주식회사 아모센스 반도체 패키지 및 모바일용 전자기기
US10608638B2 (en) * 2018-05-24 2020-03-31 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips
US11114311B2 (en) * 2018-08-30 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure and method for forming the same
KR102179167B1 (ko) * 2018-11-13 2020-11-16 삼성전자주식회사 반도체 패키지
US11183482B2 (en) 2019-09-17 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Shift control method in manufacture of semiconductor device
US11515174B2 (en) * 2019-11-12 2022-11-29 Micron Technology, Inc. Semiconductor devices with package-level compartmental shielding and associated systems and methods
TWI829379B (zh) * 2021-10-12 2024-01-11 南韓商Wit有限公司 大面積監視設備
CN117525039A (zh) * 2022-07-30 2024-02-06 华为技术有限公司 芯片封装结构及其制作方法

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Publication number Priority date Publication date Assignee Title
US5759737A (en) 1996-09-06 1998-06-02 International Business Machines Corporation Method of making a component carrier
US6972481B2 (en) * 2002-09-17 2005-12-06 Chippac, Inc. Semiconductor multi-package module including stacked-die package and having wire bond interconnect between stacked packages
TWI229433B (en) * 2004-07-02 2005-03-11 Phoenix Prec Technology Corp Direct connection multi-chip semiconductor element structure
US20090170241A1 (en) * 2007-12-26 2009-07-02 Stats Chippac, Ltd. Semiconductor Device and Method of Forming the Device Using Sacrificial Carrier
US8604600B2 (en) * 2011-12-30 2013-12-10 Deca Technologies Inc. Fully molded fan-out
US9196509B2 (en) * 2010-02-16 2015-11-24 Deca Technologies Inc Semiconductor device and method of adaptive patterning for panelized packaging
US8268677B1 (en) * 2011-03-08 2012-09-18 Stats Chippac, Ltd. Semiconductor device and method of forming shielding layer over semiconductor die mounted to TSV interposer
TWI543307B (zh) * 2012-09-27 2016-07-21 欣興電子股份有限公司 封裝載板與晶片封裝結構
US9269622B2 (en) * 2013-05-09 2016-02-23 Deca Technologies Inc. Semiconductor device and method of land grid array packaging with bussing lines
KR101601388B1 (ko) * 2014-01-13 2016-03-08 하나 마이크론(주) 반도체 패키지 및 그 제조 방법

Also Published As

Publication number Publication date
TW201729373A (zh) 2017-08-16
KR20180084877A (ko) 2018-07-25
KR102127774B1 (ko) 2020-06-29
WO2017087899A1 (en) 2017-05-26
TWI674658B (zh) 2019-10-11
CN108307661A (zh) 2018-07-20
CN108307661B (zh) 2022-07-08

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