HK1199869A1 - 新型材料 - Google Patents

新型材料

Info

Publication number
HK1199869A1
HK1199869A1 HK15100402.5A HK15100402A HK1199869A1 HK 1199869 A1 HK1199869 A1 HK 1199869A1 HK 15100402 A HK15100402 A HK 15100402A HK 1199869 A1 HK1199869 A1 HK 1199869A1
Authority
HK
Hong Kong
Prior art keywords
novel material
novel
Prior art date
Application number
HK15100402.5A
Other languages
English (en)
Inventor
Gin Jose
Toney Teddy Fernandez
Peter John Grant
Animesh Jha
Sikha Saha
David Paul Steenson
Original Assignee
Univ Leeds
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Leeds filed Critical Univ Leeds
Publication of HK1199869A1 publication Critical patent/HK1199869A1/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00Measuring for diagnostic purposes; Identification of persons
    • A61B5/145Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
    • A61B5/1455Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/12061Silicon
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12188Ion implantation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31Surface property or characteristic of web, sheet or block
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31Surface property or characteristic of web, sheet or block
    • Y10T428/315Surface modified glass [e.g., tempered, strengthened, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Animal Behavior & Ethology (AREA)
  • Biophysics (AREA)
  • Pathology (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Medical Informatics (AREA)
  • Molecular Biology (AREA)
  • Surgery (AREA)
  • Optics & Photonics (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Optical Integrated Circuits (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)
HK15100402.5A 2012-02-08 2015-01-14 新型材料 HK1199869A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1202128.3A GB201202128D0 (en) 2012-02-08 2012-02-08 Novel material
PCT/GB2013/050300 WO2013117941A2 (en) 2012-02-08 2013-02-08 Novel material

Publications (1)

Publication Number Publication Date
HK1199869A1 true HK1199869A1 (zh) 2015-07-24

Family

ID=45896770

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15100402.5A HK1199869A1 (zh) 2012-02-08 2015-01-14 新型材料

Country Status (10)

Country Link
US (3) US10604445B2 (zh)
EP (1) EP2819968B1 (zh)
KR (1) KR102060211B1 (zh)
CN (1) CN104093676B (zh)
ES (1) ES2779628T3 (zh)
GB (1) GB201202128D0 (zh)
HK (1) HK1199869A1 (zh)
IN (1) IN2014DN07329A (zh)
SG (2) SG11201404329WA (zh)
WO (1) WO2013117941A2 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201202128D0 (en) 2012-02-08 2012-03-21 Univ Leeds Novel material
GB201514431D0 (en) * 2015-08-13 2015-09-30 Univ Leeds Improvements in and relating to materials
CN109689586B (zh) * 2016-04-12 2021-11-19 旭硝子欧洲玻璃公司 减反射玻璃基板及其制造方法
JP2021515739A (ja) * 2018-03-05 2021-06-24 エージーシー グラス ユーロップAgc Glass Europe アンチグレアガラス板
US20220087557A1 (en) * 2020-05-22 2022-03-24 Google Llc Erbium Doped Glass For Optical Amplification In Detecting A Photoplethysmography

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
GB2080027B (en) 1980-07-10 1985-02-27 Hughes Technology Pty Ltd Laser particle generator
US4751100A (en) * 1983-06-20 1988-06-14 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium and method for making the same
JPS614240A (ja) * 1984-06-18 1986-01-10 Toshiba Corp 半導体装置の製造方法
FR2594853A1 (fr) * 1986-02-25 1987-08-28 Commissariat Energie Atomique Procede et dispositif de traitement d'un materiau par effet thermo-ionique en vue d'en modifier ses proprietes physico-chimiques
EP0244496B1 (de) * 1986-05-06 1991-01-16 Ibm Deutschland Gmbh Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung
IT1211939B (it) 1987-11-27 1989-11-08 Siv Soc Italiana Vetro Procedimento per la fabbricazione di vetri con caratteristiche energetiche modificate e prodotto cosi'ottenuto
US5342690A (en) 1992-11-20 1994-08-30 Ford Motor Company Reticular glass surface
FR2709763B1 (fr) * 1993-09-08 1995-10-13 Commissariat Energie Atomique Dispositif de traitement d'un matériau, à tête photo-ionique miniaturisée.
JP3514500B2 (ja) * 1994-01-28 2004-03-31 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JPH08133793A (ja) 1994-10-31 1996-05-28 Asahi Glass Co Ltd 熱線反射ガラス及びその製造方法
US5683757A (en) * 1995-08-25 1997-11-04 Iskanderova; Zelina A. Surface modification of polymers and carbon-based materials by ion implantation and oxidative conversion
JP2832340B2 (ja) 1996-01-19 1998-12-09 工業技術院長 光誘起屈折率変化ガラス材料の製造方法、光誘起屈折率変化ガラス材料およびガラス材料の屈折率変化方法
US5871826A (en) * 1996-05-30 1999-02-16 Xerox Corporation Proximity laser doping technique for electronic materials
JP3337953B2 (ja) * 1997-09-05 2002-10-28 シャープ株式会社 Soi・mosfet及びその製造方法
US6107641A (en) * 1997-09-10 2000-08-22 Xerox Corporation Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
DE19756348C1 (de) 1997-11-03 1999-04-15 Fraunhofer Ges Forschung Verfahren zum Bekeimen und/oder Implantieren und/oder Beschichten und/oder Strukturieren einer Oberfläche und Lasersputteranlage zur Durchführung des Verfahrens
US6600563B1 (en) * 1997-12-12 2003-07-29 Applera Corporation Optical resonance analysis system
US6294223B1 (en) * 1997-12-23 2001-09-25 Georgia Tech Research Corp. Method for ion implantation induced embedded particle formation via reduction
US6372585B1 (en) 1998-09-25 2002-04-16 Texas Instruments Incorporated Semiconductor device method
US6330388B1 (en) * 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices
US6509070B1 (en) * 2000-09-22 2003-01-21 The United States Of America As Represented By The Secretary Of The Air Force Laser ablation, low temperature-fabricated yttria-stabilized zirconia oriented films
US6878562B2 (en) * 2000-10-20 2005-04-12 Phosistor Technologies, Incorporated Method for shifting the bandgap energy of a quantum well layer
FR2818390B1 (fr) * 2000-12-15 2003-11-07 Ion Beam Services Guide d'onde comportant un canal sur un substrat optique
JP2003057469A (ja) * 2001-04-11 2003-02-26 Makoto Fujimaki 光導波路グレーティング、その形成方法、およびその形成用マスク
AU2002356330A1 (en) * 2001-12-27 2003-07-30 Bookham Technology Plc An in-line waveguide photo detector
JP4808966B2 (ja) * 2002-09-19 2011-11-02 シャープ株式会社 抵抗変化機能体並びにそれを備えたメモリおよび電子機器
JP4563652B2 (ja) * 2003-03-13 2010-10-13 シャープ株式会社 メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器
KR100547830B1 (ko) * 2003-08-13 2006-01-31 삼성전자주식회사 집적광학장치 및 그 제조방법
GB2408209A (en) 2003-11-18 2005-05-25 Qinetiq Ltd Flexible medical light source
CN102064367B (zh) * 2003-12-08 2013-01-30 松下电器产业株式会社 半导体电极及其制造方法、和使用该半导体电极的光电池
JP4378527B2 (ja) 2004-02-03 2009-12-09 国立大学法人 千葉大学 複数のコアを有する光ファイバーの製造方法及びその製造に用い得る柱状ガラス体の製造方法
WO2005080285A1 (en) 2004-02-20 2005-09-01 Waseda University Method for strengtehning glass and strengthened glass produced by the method
JP5028640B2 (ja) * 2004-03-26 2012-09-19 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4359207B2 (ja) * 2004-08-30 2009-11-04 シャープ株式会社 微粒子含有体の製造方法
EP1826814B8 (en) * 2004-12-13 2011-04-13 Panasonic Corporation Plasma doping method
FI20050216A0 (fi) * 2005-02-23 2005-02-23 Ruuttu Jari Menetelmä valmistaa timanttia, muita jalokiviä, kuten safiiria, rubiinia jne. ja suorittaa näillä pinnoituksia sekä suorittaa pinnoituksia muilla aineilla, kuten boriideillä, oksideillä, nitrideillä jne.
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
EP1881523B1 (en) * 2005-05-12 2013-01-02 Panasonic Corporation Plasma doping method and plasma doping apparatus
JP4834412B2 (ja) 2006-02-03 2011-12-14 富士フイルム株式会社 固体撮像装置およびこれを用いた電子内視鏡
KR101399235B1 (ko) * 2006-02-23 2014-05-30 피코데온 리미티드 오와이 탄소 질화물 코팅 및 탄소 질화물 코팅된 제품
US20070267762A1 (en) * 2006-05-19 2007-11-22 Interuniversitair Microelektronica Centrum Vzw (Imec) Semiconductor devices
CN101186446B (zh) * 2007-11-27 2010-08-11 西安交通大学 光敏特性的二氧化锗基有机-无机复合材料的制备方法
KR100918381B1 (ko) * 2007-12-17 2009-09-22 한국전자통신연구원 광통신을 위한 회절격자 커플러를 포함하는 반도체집적회로 및 그 형성 방법
US8535766B2 (en) * 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
JP2010062291A (ja) * 2008-09-03 2010-03-18 Sumco Corp 半導体基板及びその製造方法
JP2010184825A (ja) 2009-02-10 2010-08-26 Olympus Corp 複合型光学素子の製造方法および複合型光学素子
WO2011000357A2 (de) * 2009-06-30 2011-01-06 Vascotec Gmbh Verfahren und vorrichtung zur deposition dünner schichten, insbesondere zur herstellung von multilayerschichten, nanoschichten, nanostrukturen und nanokompositen
GB0915944D0 (en) 2009-09-10 2009-10-28 Univ Leeds Device
US8269931B2 (en) * 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
NL2003488C2 (nl) * 2009-09-14 2011-03-15 Rexnord Flattop Europe Bv Transportketting.
US8581349B1 (en) * 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
EP2588642A2 (fr) 2010-07-02 2013-05-08 Aptar France SAS Procede de traitement de surface d'un dispositif de distribution de produit fluide.
WO2012001325A2 (fr) 2010-07-02 2012-01-05 Valois Sas Procede de traitement de surface d'un dispositif de distribution de produit fluide.
US8946864B2 (en) * 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
GB201202128D0 (en) 2012-02-08 2012-03-21 Univ Leeds Novel material
US20150132507A1 (en) * 2012-05-25 2015-05-14 University Of Leeds Medium For Random Laser And Manufacturing Process of the Same
US20140227461A1 (en) 2013-02-14 2014-08-14 Dillard University Multiple Beam Pulsed Laser Deposition Of Composite Films
FR3002240B1 (fr) 2013-02-15 2015-07-10 Quertech Ingenierie Procede de traitement par un faisceau d'ions pour produire des materiaux en verre antireflet durable
WO2015123367A1 (en) * 2014-02-11 2015-08-20 The Mackinac Technology Company Fluorinated and hydrogenated diamond-like carbon materials for anti-reflective coatings
US10502895B2 (en) * 2016-01-06 2019-12-10 Elenion Technologies, Llc Integrated on-chip polarizer

Also Published As

Publication number Publication date
US11198643B2 (en) 2021-12-14
US20200239362A1 (en) 2020-07-30
WO2013117941A2 (en) 2013-08-15
ES2779628T3 (es) 2020-08-18
GB201202128D0 (en) 2012-03-21
KR102060211B1 (ko) 2019-12-27
SG11201404329WA (en) 2014-08-28
US10604445B2 (en) 2020-03-31
US20190256413A1 (en) 2019-08-22
EP2819968B1 (en) 2020-01-08
US20170152174A9 (en) 2017-06-01
EP2819968A2 (en) 2015-01-07
WO2013117941A3 (en) 2013-10-24
SG10201900166SA (en) 2019-02-27
CN104093676A (zh) 2014-10-08
CN104093676B (zh) 2018-04-10
US20170297958A9 (en) 2017-10-19
IN2014DN07329A (zh) 2015-04-24
KR20140143755A (ko) 2014-12-17
US20150353419A1 (en) 2015-12-10

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