HK1186569A1 - Method and apparatus for sharing internal power supplies in integrated circuit devices - Google Patents
Method and apparatus for sharing internal power supplies in integrated circuit devicesInfo
- Publication number
- HK1186569A1 HK1186569A1 HK13113852.5A HK13113852A HK1186569A1 HK 1186569 A1 HK1186569 A1 HK 1186569A1 HK 13113852 A HK13113852 A HK 13113852A HK 1186569 A1 HK1186569 A1 HK 1186569A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- integrated circuit
- power supplies
- internal power
- circuit devices
- sharing internal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13005—Structure
- H01L2224/13009—Bump connector integrally formed with a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1434—Memory
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41643710P | 2010-11-23 | 2010-11-23 | |
PCT/CA2011/000528 WO2012068664A1 (en) | 2010-11-23 | 2011-05-03 | Method and apparatus for sharing internal power supplies in integrated circuit devices |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1186569A1 true HK1186569A1 (en) | 2014-03-14 |
Family
ID=46064267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK13113852.5A HK1186569A1 (en) | 2010-11-23 | 2013-12-12 | Method and apparatus for sharing internal power supplies in integrated circuit devices |
Country Status (7)
Country | Link |
---|---|
US (2) | US8625352B2 (xx) |
EP (1) | EP2643835A1 (xx) |
JP (1) | JP5623653B2 (xx) |
KR (1) | KR20130140782A (xx) |
CN (1) | CN103229240B (xx) |
HK (1) | HK1186569A1 (xx) |
WO (1) | WO2012068664A1 (xx) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8913443B2 (en) * | 2011-09-19 | 2014-12-16 | Conversant Intellectual Property Management Inc. | Voltage regulation for 3D packages and method of manufacturing same |
US9318186B1 (en) * | 2014-12-31 | 2016-04-19 | Nanya Technology Corporation | DRAM wordline control circuit, DRAM module and method of controlling DRAM wordline voltage |
TWI560718B (en) * | 2015-03-27 | 2016-12-01 | Silicon Motion Inc | Data storage device and encoding method thereof |
JP7320291B2 (ja) | 2021-07-12 | 2023-08-03 | 有限会社 エコ・ライス新潟 | 液体冷凍保存用容器及び飲料の長期保存方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5197029A (en) * | 1991-02-07 | 1993-03-23 | Texas Instruments Incorporated | Common-line connection for integrated memory array |
JPH1070243A (ja) * | 1996-05-30 | 1998-03-10 | Toshiba Corp | 半導体集積回路装置およびその検査方法およびその検査装置 |
US6750527B1 (en) * | 1996-05-30 | 2004-06-15 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method |
TW408332B (en) * | 1997-07-29 | 2000-10-11 | Toshiba Corp | Semiconductor memory and method for controlling programming the same |
KR100399773B1 (ko) | 2001-02-08 | 2003-09-26 | 삼성전자주식회사 | 메모리슬롯별 서로 다른 기준전압을 갖는 반도체 메모리장치 |
JP2003036673A (ja) * | 2001-07-24 | 2003-02-07 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2003132679A (ja) * | 2001-10-23 | 2003-05-09 | Hitachi Ltd | 半導体装置 |
US7466160B2 (en) * | 2002-11-27 | 2008-12-16 | Inapac Technology, Inc. | Shared memory bus architecture for system with processor and memory units |
JP4419049B2 (ja) * | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
JP4068616B2 (ja) * | 2003-12-26 | 2008-03-26 | エルピーダメモリ株式会社 | 半導体装置 |
KR100626385B1 (ko) * | 2004-09-13 | 2006-09-20 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것을 포함하는 멀티칩 패키지 |
KR100688514B1 (ko) * | 2005-01-05 | 2007-03-02 | 삼성전자주식회사 | 다른 종류의 mcp를 탑재한 메모리 모듈 |
JP2006286048A (ja) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | 半導体記憶装置 |
US7499345B2 (en) * | 2005-11-25 | 2009-03-03 | Giovanni Campardo | Non-volatile memory implemented with low-voltages transistors and related system and method |
JP2007180087A (ja) * | 2005-12-27 | 2007-07-12 | Seiko Epson Corp | 集積回路装置 |
KR100798797B1 (ko) * | 2006-06-30 | 2008-01-29 | 주식회사 하이닉스반도체 | 내부전압 발생장치를 구비하는 반도체메모리소자 및 그의구동방법 |
US7639540B2 (en) * | 2007-02-16 | 2009-12-29 | Mosaid Technologies Incorporated | Non-volatile semiconductor memory having multiple external power supplies |
CN101290896A (zh) * | 2007-04-19 | 2008-10-22 | 矽品精密工业股份有限公司 | 可供堆叠的半导体装置及其制法 |
JP2008300469A (ja) * | 2007-05-30 | 2008-12-11 | Sharp Corp | 不揮発性半導体記憶装置 |
KR101488383B1 (ko) * | 2007-12-21 | 2015-02-02 | 샌디스크 테크놀로지스, 인코포레이티드 | 자체 구성 가능한 다중 레귤레이터 asic 코어 전력 전달 |
WO2009085439A1 (en) | 2007-12-21 | 2009-07-09 | Sandisk Corporation | Multi-regulator power delivery system for asic cores |
US7894230B2 (en) | 2009-02-24 | 2011-02-22 | Mosaid Technologies Incorporated | Stacked semiconductor devices including a master device |
US8400781B2 (en) * | 2009-09-02 | 2013-03-19 | Mosaid Technologies Incorporated | Using interrupted through-silicon-vias in integrated circuits adapted for stacking |
-
2011
- 2011-05-03 CN CN201180056159.XA patent/CN103229240B/zh not_active Expired - Fee Related
- 2011-05-03 KR KR1020137015142A patent/KR20130140782A/ko not_active Application Discontinuation
- 2011-05-03 US US13/099,791 patent/US8625352B2/en active Active
- 2011-05-03 JP JP2013540186A patent/JP5623653B2/ja not_active Expired - Fee Related
- 2011-05-03 WO PCT/CA2011/000528 patent/WO2012068664A1/en active Application Filing
- 2011-05-03 EP EP11843041.2A patent/EP2643835A1/en not_active Withdrawn
-
2013
- 2013-12-12 HK HK13113852.5A patent/HK1186569A1/xx not_active IP Right Cessation
-
2014
- 2014-01-06 US US14/148,336 patent/US9236095B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8625352B2 (en) | 2014-01-07 |
CN103229240A (zh) | 2013-07-31 |
US9236095B2 (en) | 2016-01-12 |
KR20130140782A (ko) | 2013-12-24 |
US20120127798A1 (en) | 2012-05-24 |
JP5623653B2 (ja) | 2014-11-12 |
CN103229240B (zh) | 2015-05-20 |
EP2643835A1 (en) | 2013-10-02 |
WO2012068664A1 (en) | 2012-05-31 |
US20140119136A1 (en) | 2014-05-01 |
JP2014501016A (ja) | 2014-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20190506 |