HK1180734A1 - Thin-film formation method and thin-film formation device - Google Patents

Thin-film formation method and thin-film formation device

Info

Publication number
HK1180734A1
HK1180734A1 HK13107885.8A HK13107885A HK1180734A1 HK 1180734 A1 HK1180734 A1 HK 1180734A1 HK 13107885 A HK13107885 A HK 13107885A HK 1180734 A1 HK1180734 A1 HK 1180734A1
Authority
HK
Hong Kong
Prior art keywords
thin
film formation
formation method
formation device
film
Prior art date
Application number
HK13107885.8A
Other languages
English (en)
Chinese (zh)
Inventor
日向陽平
佐井旭陽
大瀧芳幸
鹽野郎
姜友松
Original Assignee
株式會社新柯隆
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式會社新柯隆 filed Critical 株式會社新柯隆
Publication of HK1180734A1 publication Critical patent/HK1180734A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Optical Elements (AREA)
HK13107885.8A 2010-10-08 2013-07-05 Thin-film formation method and thin-film formation device HK1180734A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010228845A JP5126909B2 (ja) 2010-10-08 2010-10-08 薄膜形成方法及び薄膜形成装置
PCT/JP2011/063467 WO2012046474A1 (ja) 2010-10-08 2011-06-13 薄膜形成方法及び薄膜形成装置

Publications (1)

Publication Number Publication Date
HK1180734A1 true HK1180734A1 (en) 2013-10-25

Family

ID=45927475

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13107885.8A HK1180734A1 (en) 2010-10-08 2013-07-05 Thin-film formation method and thin-film formation device

Country Status (8)

Country Link
US (1) US10415135B2 (ja)
EP (1) EP2626441A4 (ja)
JP (1) JP5126909B2 (ja)
KR (1) KR20130080000A (ja)
CN (1) CN102892918B (ja)
HK (1) HK1180734A1 (ja)
TW (1) TWI486472B (ja)
WO (1) WO2012046474A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014038090A1 (ja) * 2012-09-10 2014-03-13 株式会社シンクロン 測定装置及び成膜装置
WO2014097388A1 (ja) * 2012-12-18 2014-06-26 株式会社アルバック 成膜方法及び成膜装置
KR102169017B1 (ko) 2014-01-10 2020-10-23 삼성디스플레이 주식회사 스퍼터링 장치 및 스퍼터링 방법
CN105980597A (zh) * 2014-02-04 2016-09-28 株式会社爱发科 薄膜制造装置、掩模组、薄膜制造方法
EP3396016A4 (en) * 2015-12-24 2019-08-28 Konica Minolta, Inc. FILM-EDITING DEVICE AND FILM-EDGING PROCESS
US20210230741A1 (en) * 2019-03-12 2021-07-29 Ulvac, Inc. Film Forming Method
JP6959966B2 (ja) * 2019-09-10 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置および成膜方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0747820B2 (ja) * 1989-09-22 1995-05-24 株式会社日立製作所 成膜装置
JPH0443906A (ja) * 1990-06-11 1992-02-13 Matsushita Electric Ind Co Ltd 光学的膜厚モニタ装置
JPH08120447A (ja) * 1994-10-24 1996-05-14 Hitachi Metals Ltd スパッタ成膜方法
JP3624476B2 (ja) * 1995-07-17 2005-03-02 セイコーエプソン株式会社 半導体レーザ装置の製造方法
US5911858A (en) * 1997-02-18 1999-06-15 Sandia Corporation Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors
JPH11121444A (ja) * 1997-10-08 1999-04-30 Oki Electric Ind Co Ltd 絶縁膜形成装置および絶縁膜形成方法
JP3306394B2 (ja) 1999-11-02 2002-07-24 株式会社シンクロン 膜厚測定装置および膜厚測定方法
JP3528955B2 (ja) * 1999-12-24 2004-05-24 株式会社ニコン 光学素子の設計方法及び製造方法並びに光学素子
JP3774353B2 (ja) * 2000-02-25 2006-05-10 株式会社シンクロン 金属化合物薄膜の形成方法およびその形成装置
JP2001342563A (ja) * 2000-05-31 2001-12-14 Olympus Optical Co Ltd 光学薄膜の膜厚制御方法及び膜厚制御装置
US6798499B2 (en) * 2001-07-18 2004-09-28 Alps Electric Co., Ltd. Method of forming optical thin films on substrate at high accuracy and apparatus therefor
US7247345B2 (en) * 2002-03-25 2007-07-24 Ulvac, Inc. Optical film thickness controlling method and apparatus, dielectric multilayer film and manufacturing apparatus thereof
JP4034979B2 (ja) * 2002-03-25 2008-01-16 株式会社アルバック 光学膜厚制御方法及び光学膜厚制御装置並びに該光学膜厚制御方法を用いて作製した誘電体薄膜
JP4766846B2 (ja) * 2004-07-09 2011-09-07 株式会社シンクロン 薄膜形成方法
JP4806268B2 (ja) * 2006-02-10 2011-11-02 株式会社シンクロン 薄膜形成装置および薄膜形成方法
JP4487264B2 (ja) * 2006-06-26 2010-06-23 旭硝子株式会社 スパッタ装置及びスパッタ成膜方法
EP1970465B1 (en) * 2007-03-13 2013-08-21 JDS Uniphase Corporation Method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index
CN101548028B (zh) * 2007-05-15 2011-12-07 东洋铝株式会社 碳包覆铝材及其制造方法
WO2009038085A1 (ja) * 2007-09-21 2009-03-26 Ulvac, Inc. 薄膜形成装置、膜厚測定方法、膜厚センサー
JP5078813B2 (ja) * 2008-09-09 2012-11-21 株式会社シンクロン 薄膜形成方法及び薄膜形成装置
JP2010138463A (ja) * 2008-12-12 2010-06-24 K2 Technology Kk 光学薄膜製造方法

Also Published As

Publication number Publication date
JP2012082463A (ja) 2012-04-26
KR20130080000A (ko) 2013-07-11
CN102892918B (zh) 2015-05-13
US20130081942A1 (en) 2013-04-04
EP2626441A1 (en) 2013-08-14
TW201233833A (en) 2012-08-16
US10415135B2 (en) 2019-09-17
WO2012046474A1 (ja) 2012-04-12
CN102892918A (zh) 2013-01-23
EP2626441A4 (en) 2014-03-26
TWI486472B (zh) 2015-06-01
JP5126909B2 (ja) 2013-01-23

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190613