HK1178315A1 - 用於有機電子器件的電極處理方法 - Google Patents

用於有機電子器件的電極處理方法

Info

Publication number
HK1178315A1
HK1178315A1 HK13105079.8A HK13105079A HK1178315A1 HK 1178315 A1 HK1178315 A1 HK 1178315A1 HK 13105079 A HK13105079 A HK 13105079A HK 1178315 A1 HK1178315 A1 HK 1178315A1
Authority
HK
Hong Kong
Prior art keywords
electronic devices
treatment process
organic electronic
electrode treatment
electrode
Prior art date
Application number
HK13105079.8A
Other languages
English (en)
Inventor
．米希凱維奇
陳莉惠
．巴克隆德
．布魯克斯
．斯帕羅
．卡爾
．勞埃德
Original Assignee
默克專利股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 默克專利股份有限公司 filed Critical 默克專利股份有限公司
Publication of HK1178315A1 publication Critical patent/HK1178315A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
HK13105079.8A 2010-02-25 2013-04-26 用於有機電子器件的電極處理方法 HK1178315A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10001930 2010-02-25
EP10008754 2010-08-23
PCT/EP2011/000344 WO2011103952A1 (en) 2010-02-25 2011-01-26 Electrode treatment process for organic electronic devices

Publications (1)

Publication Number Publication Date
HK1178315A1 true HK1178315A1 (zh) 2013-09-06

Family

ID=43661921

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13105079.8A HK1178315A1 (zh) 2010-02-25 2013-04-26 用於有機電子器件的電極處理方法

Country Status (11)

Country Link
US (1) US8878165B2 (zh)
EP (1) EP2539949B1 (zh)
JP (1) JP2013520811A (zh)
KR (1) KR101852641B1 (zh)
CN (1) CN102763235B (zh)
GB (1) GB2490465B (zh)
HK (1) HK1178315A1 (zh)
RU (1) RU2588605C2 (zh)
SG (1) SG183337A1 (zh)
TW (1) TWI486337B (zh)
WO (1) WO2011103952A1 (zh)

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FR2960703B1 (fr) 2010-05-28 2012-05-18 Commissariat Energie Atomique Dispositif optoelectronique avec electrode enterree
US10367144B2 (en) * 2011-06-17 2019-07-30 The Regents Of The University Of California Stable organic field-effect transistors by incorporating an electron-accepting molecule
JP5974485B2 (ja) * 2011-09-16 2016-08-23 株式会社リコー 電気機械変換素子の製造方法
GB2516607A (en) * 2013-03-06 2015-02-04 Cambridge Display Tech Ltd Organic electronic device
CN103396379A (zh) * 2013-07-11 2013-11-20 华南理工大学 5,6-二氟苯并噻唑及其制备方法
JP2016532300A (ja) * 2013-08-29 2016-10-13 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン 有機光起電力技術におけるバッファ層の励起子阻止処理
JP6303358B2 (ja) * 2013-09-25 2018-04-04 凸版印刷株式会社 薄膜トランジスタ
JP6716462B2 (ja) * 2014-02-19 2020-07-01 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 環状アミン表面改質剤およびかかる環状アミン表面改質剤を含む有機電子デバイス
CN106463627B (zh) * 2014-04-14 2019-06-28 东丽株式会社 光伏元件
JP7047615B2 (ja) * 2018-06-13 2022-04-05 住友電工デバイス・イノベーション株式会社 半導体デバイスの製造方法
US20220052277A1 (en) * 2018-12-04 2022-02-17 Merck Patent Gmbh Self-assembled monolayer for electrode modification and device comprising such self-assembled monolayer
CN111192857A (zh) * 2020-02-14 2020-05-22 宸盛光电有限公司 抗腐蚀的导电结构及抗腐蚀涂层的组成物
CN111848930B (zh) * 2020-07-30 2021-07-13 清华大学 可溶性聚苯并呋喃及其制备方法与在合成5-取代苯并呋喃的应用

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SU1051077A1 (ru) * 1982-02-11 1983-10-30 Иркутский институт органической химии СО АН СССР Комплексы 1-винил-нафто-(2,3)-имидазола дл получени полупроводниковых и фотопроводниковых материалов
DE10050862C2 (de) 2000-10-06 2002-08-01 Atotech Deutschland Gmbh Bad und Verfahren zum stromlosen Abscheiden von Silber auf Metalloberflächen
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
RU2262158C2 (ru) * 2001-11-07 2005-10-10 Дзе Майтрэ Корпорейшн Мономолекулярное электронное устройство
GB0229191D0 (en) 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
CN100421279C (zh) * 2003-11-17 2008-09-24 中国科学院长春应用化学研究所 含有修饰层的有机薄膜晶体管器件及其加工方法
DE602004028399D1 (de) 2003-11-28 2010-09-09 Merck Patent Gmbh Organische halbleiterschicht-formulierungen mit polyacenen und organischen binderpolymeren
JP5013665B2 (ja) * 2004-09-10 2012-08-29 国立大学法人東京工業大学 ベンゾトリアゾール構造含有高分子及びその製造方法、並びに電荷輸送材料及び有機電子デバイス
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DE202005001741U1 (de) 2005-02-03 2005-03-31 Gloeckl Josef Tragelement für ein Sitzmöbel
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US7385221B1 (en) 2005-03-08 2008-06-10 University Of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
US20080012014A1 (en) * 2006-07-14 2008-01-17 Jin-Seong Park Thin film transistor, method of preparing the same, and flat panel display device including the thin film transistor
KR100795804B1 (ko) * 2006-08-10 2008-01-21 삼성에스디아이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 구비한 평판표시 장치
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JP2008172059A (ja) * 2007-01-12 2008-07-24 Konica Minolta Holdings Inc 有機薄膜トランジスタ及びその製造方法
JP5135904B2 (ja) 2007-06-19 2013-02-06 株式会社日立製作所 有機薄膜トランジスタアレイおよびその製造方法
US8309952B2 (en) 2007-08-28 2012-11-13 Toppan Printing Co., Ltd. Thin film transistor and method for manufacturing the same
TWI453301B (zh) 2007-11-08 2014-09-21 Enthone 浸鍍銀塗層上的自組分子
JP4871302B2 (ja) 2008-01-08 2012-02-08 株式会社日立製作所 有機薄膜トランジスタ

Also Published As

Publication number Publication date
RU2012140696A (ru) 2014-03-27
TW201139385A (en) 2011-11-16
RU2588605C2 (ru) 2016-07-10
GB2490465A (en) 2012-10-31
GB2490465B (en) 2016-03-23
TWI486337B (zh) 2015-06-01
JP2013520811A (ja) 2013-06-06
WO2011103952A8 (en) 2011-10-27
CN102763235A (zh) 2012-10-31
SG183337A1 (en) 2012-09-27
WO2011103952A1 (en) 2011-09-01
KR20120130297A (ko) 2012-11-30
EP2539949B1 (en) 2018-01-10
GB201215517D0 (en) 2012-10-17
US20120319097A1 (en) 2012-12-20
EP2539949A1 (en) 2013-01-02
CN102763235B (zh) 2015-06-24
US8878165B2 (en) 2014-11-04
KR101852641B1 (ko) 2018-04-26

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200128