HK1171870A1 - Reduced pixel area image sensor - Google Patents
Reduced pixel area image sensorInfo
- Publication number
- HK1171870A1 HK1171870A1 HK12112671.7A HK12112671A HK1171870A1 HK 1171870 A1 HK1171870 A1 HK 1171870A1 HK 12112671 A HK12112671 A HK 12112671A HK 1171870 A1 HK1171870 A1 HK 1171870A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- pixel area
- area image
- reduced pixel
- reduced
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/686,573 US7915702B2 (en) | 2007-03-15 | 2007-03-15 | Reduced pixel area image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1171870A1 true HK1171870A1 (en) | 2013-04-05 |
Family
ID=39491702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK12112671.7A HK1171870A1 (en) | 2007-03-15 | 2012-12-07 | Reduced pixel area image sensor |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7915702B2 (ko) |
| EP (1) | EP2118930B1 (ko) |
| JP (1) | JP5357063B2 (ko) |
| KR (1) | KR101398767B1 (ko) |
| CN (2) | CN102623474B (ko) |
| HK (1) | HK1171870A1 (ko) |
| TW (2) | TWI559514B (ko) |
| WO (1) | WO2008115331A1 (ko) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7924333B2 (en) * | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
| US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
| JP5408954B2 (ja) * | 2008-10-17 | 2014-02-05 | キヤノン株式会社 | 撮像装置、及び撮像システム |
| GB2466213B (en) * | 2008-12-12 | 2013-03-06 | Cmosis Nv | Pixel array with shared readout circuitry |
| JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP2010206172A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 撮像装置およびカメラ |
| JP2010206173A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびカメラ |
| JP2010206174A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびその製造方法ならびにカメラ |
| JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
| JP5537172B2 (ja) * | 2010-01-28 | 2014-07-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5377549B2 (ja) * | 2011-03-03 | 2013-12-25 | 株式会社東芝 | 固体撮像装置 |
| US9766202B2 (en) | 2011-07-14 | 2017-09-19 | National University Corporation Toyohashi University Of Technology | Method for detecting chemical and physical phenomenon, and device therefor |
| DE102011120099B4 (de) | 2011-12-02 | 2024-05-29 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor und Verfahren zum Auslesen eines Bildsensors |
| CN103208501B (zh) | 2012-01-17 | 2017-07-28 | 奥林巴斯株式会社 | 固体摄像装置及其制造方法、摄像装置、基板、半导体装置 |
| JP5953087B2 (ja) * | 2012-01-17 | 2016-07-13 | オリンパス株式会社 | 固体撮像装置、撮像装置および固体撮像装置の製造方法 |
| WO2014002366A1 (ja) * | 2012-06-27 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置 |
| JP5962533B2 (ja) * | 2013-02-13 | 2016-08-03 | ソニー株式会社 | 固体撮像素子、駆動方法、および撮像装置 |
| US9319613B2 (en) * | 2013-12-05 | 2016-04-19 | Omnivision Technologies, Inc. | Image sensor having NMOS source follower with P-type doping in polysilicon gate |
| CN105100654B (zh) * | 2015-09-18 | 2018-02-23 | 中国科学院高能物理研究所 | 一种像素单元电路及像素读出芯片 |
| KR20180076845A (ko) | 2016-12-28 | 2018-07-06 | 삼성전자주식회사 | 이미지 센서 |
| KR20210114786A (ko) * | 2020-03-11 | 2021-09-24 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| WO2023137680A1 (en) * | 2022-01-21 | 2023-07-27 | Huawei Technologies Co.,Ltd. | Imaging device array |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625210A (en) | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
| ES2211937T3 (es) | 1995-08-02 | 2004-07-16 | Canon Kabushiki Kaisha | Dispositivo sensor de imagenes de estado solido con linea de salida comun. |
| EP0809394B1 (en) * | 1996-05-22 | 2008-02-13 | Eastman Kodak Company | Active pixel sensor with switched supply row select |
| US5949061A (en) | 1997-02-27 | 1999-09-07 | Eastman Kodak Company | Active pixel sensor with switched supply row select |
| US5903021A (en) * | 1997-01-17 | 1999-05-11 | Eastman Kodak Company | Partially pinned photodiode for solid state image sensors |
| US6160281A (en) | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
| US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
| JP3466886B2 (ja) * | 1997-10-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
| JP4006111B2 (ja) | 1998-09-28 | 2007-11-14 | キヤノン株式会社 | 固体撮像装置 |
| US6624850B1 (en) * | 1998-12-30 | 2003-09-23 | Eastman Kodak Company | Photogate active pixel sensor with high fill factor and correlated double sampling |
| US6218656B1 (en) * | 1998-12-30 | 2001-04-17 | Eastman Kodak Company | Photodiode active pixel sensor with shared reset signal row select |
| US6657665B1 (en) | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
| US6541794B1 (en) * | 2000-08-31 | 2003-04-01 | Motorola, Inc. | Imaging device and method |
| CN100347859C (zh) * | 2001-03-05 | 2007-11-07 | 松下电器产业株式会社 | 固体摄象装置 |
| US6855937B2 (en) * | 2001-05-18 | 2005-02-15 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6720942B2 (en) * | 2002-02-12 | 2004-04-13 | Eastman Kodak Company | Flat-panel light emitting pixel with luminance feedback |
| US7183531B2 (en) * | 2004-03-31 | 2007-02-27 | Micron Technology, Inc. | Amplification with feedback capacitance for photodetector signals |
| US20060103749A1 (en) * | 2004-11-12 | 2006-05-18 | Xinping He | Image sensor and pixel that has switchable capacitance at the floating node |
| JP4340660B2 (ja) | 2005-04-14 | 2009-10-07 | シャープ株式会社 | 増幅型固体撮像装置 |
| JP4768305B2 (ja) | 2005-04-15 | 2011-09-07 | 岩手東芝エレクトロニクス株式会社 | 固体撮像装置 |
| JP5247007B2 (ja) | 2005-06-09 | 2013-07-24 | キヤノン株式会社 | 撮像装置及び撮像システム |
-
2007
- 2007-03-15 US US11/686,573 patent/US7915702B2/en active Active
-
2008
- 2008-02-20 JP JP2009553578A patent/JP5357063B2/ja active Active
- 2008-02-20 WO PCT/US2008/002235 patent/WO2008115331A1/en active Application Filing
- 2008-02-20 CN CN201210102673.9A patent/CN102623474B/zh active Active
- 2008-02-20 KR KR1020097019118A patent/KR101398767B1/ko active IP Right Grant
- 2008-02-20 CN CN2008800084283A patent/CN101647118B/zh active Active
- 2008-02-20 EP EP08725828.1A patent/EP2118930B1/en active Active
- 2008-03-14 TW TW102139161A patent/TWI559514B/zh active
- 2008-03-14 TW TW097109186A patent/TWI418021B/zh active
-
2011
- 2011-01-26 US US13/014,336 patent/US8294187B2/en active Active
-
2012
- 2012-12-07 HK HK12112671.7A patent/HK1171870A1/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20080225148A1 (en) | 2008-09-18 |
| WO2008115331A1 (en) | 2008-09-25 |
| US8294187B2 (en) | 2012-10-23 |
| JP2010521812A (ja) | 2010-06-24 |
| US20110122307A1 (en) | 2011-05-26 |
| KR20090121322A (ko) | 2009-11-25 |
| US7915702B2 (en) | 2011-03-29 |
| TW201407759A (zh) | 2014-02-16 |
| CN102623474A (zh) | 2012-08-01 |
| CN101647118A (zh) | 2010-02-10 |
| TWI559514B (zh) | 2016-11-21 |
| CN102623474B (zh) | 2015-08-05 |
| JP5357063B2 (ja) | 2013-12-04 |
| TW200903789A (en) | 2009-01-16 |
| EP2118930B1 (en) | 2015-01-14 |
| KR101398767B1 (ko) | 2014-05-27 |
| EP2118930A1 (en) | 2009-11-18 |
| CN101647118B (zh) | 2012-06-27 |
| TWI418021B (zh) | 2013-12-01 |
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