HK1190228A1 - 用於背側照明圖像傳感器的黑色參考像素 - Google Patents

用於背側照明圖像傳感器的黑色參考像素

Info

Publication number
HK1190228A1
HK1190228A1 HK14103165.7A HK14103165A HK1190228A1 HK 1190228 A1 HK1190228 A1 HK 1190228A1 HK 14103165 A HK14103165 A HK 14103165A HK 1190228 A1 HK1190228 A1 HK 1190228A1
Authority
HK
Hong Kong
Prior art keywords
image sensor
reference pixel
black reference
illuminated image
backside illuminated
Prior art date
Application number
HK14103165.7A
Other languages
English (en)
Inventor
戴幸志
．羅茲
．毛
．韋內齊亞
Original Assignee
豪威科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 豪威科技股份有限公司 filed Critical 豪威科技股份有限公司
Publication of HK1190228A1 publication Critical patent/HK1190228A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
HK14103165.7A 2008-02-08 2014-04-02 用於背側照明圖像傳感器的黑色參考像素 HK1190228A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/028,590 US8482639B2 (en) 2008-02-08 2008-02-08 Black reference pixel for backside illuminated image sensor
PCT/US2009/032897 WO2009100038A1 (en) 2008-02-08 2009-02-02 Black reference pixel for backside illuminated image sensor

Publications (1)

Publication Number Publication Date
HK1190228A1 true HK1190228A1 (zh) 2014-06-27

Family

ID=40481743

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14103165.7A HK1190228A1 (zh) 2008-02-08 2014-04-02 用於背側照明圖像傳感器的黑色參考像素

Country Status (6)

Country Link
US (1) US8482639B2 (zh)
EP (1) EP2253016B1 (zh)
CN (1) CN103430311B (zh)
HK (1) HK1190228A1 (zh)
TW (1) TWI541986B (zh)
WO (1) WO2009100038A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8233066B2 (en) * 2010-02-18 2012-07-31 Omnivision Technologies, Inc. Image sensor with improved black level calibration
US8338856B2 (en) 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
US8836835B2 (en) * 2010-10-04 2014-09-16 International Business Machines Corporation Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure
US8390712B2 (en) 2010-12-08 2013-03-05 Aptina Imaging Corporation Image sensing pixels with feedback loops for imaging systems
US8643750B2 (en) * 2010-12-22 2014-02-04 Omnivision Technologies, Inc. Reducing noise in image sensors by concurrently reading reset and image signal levels from active and reference pixels
US8455971B2 (en) * 2011-02-14 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for improving charge transfer in backside illuminated image sensor
US9232162B2 (en) 2011-11-08 2016-01-05 Semiconductor Components Industries, Llc Optical isolation of optically black pixels in image sensors
US9224773B2 (en) 2011-11-30 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Metal shielding layer in backside illumination image sensor chips and methods for forming the same
FR2991083A1 (fr) * 2012-05-24 2013-11-29 St Microelectronics Grenoble 2 Procede et dispositif de protection d'un circuit integre contre des attaques par sa face arriere
JP6116878B2 (ja) * 2012-12-03 2017-04-19 ルネサスエレクトロニクス株式会社 半導体装置
US9224782B2 (en) 2013-04-19 2015-12-29 Semiconductor Components Industries, Llc Imaging systems with reference pixels for image flare mitigation
JP6127869B2 (ja) * 2013-09-25 2017-05-17 ソニー株式会社 固体撮像素子及びその駆動方法、並びに電子機器
US9859326B2 (en) * 2014-01-24 2018-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, image sensors, and methods of manufacture thereof
WO2015144972A1 (en) * 2014-03-27 2015-10-01 Nokia Technologies Oy An apparatus with nanoparticle reference pixel and associated methods
KR102155480B1 (ko) 2014-07-07 2020-09-14 삼성전자 주식회사 이미지 센서, 이를 포함하는 이미지 처리 시스템, 및 이를 포함하는 휴대용 전자 장치
US9743027B2 (en) * 2015-06-24 2017-08-22 Semiconductor Components Industries, Llc Image sensor with high dynamic range and method
KR102593949B1 (ko) 2018-07-25 2023-10-27 삼성전자주식회사 이미지 센서
KR20220126322A (ko) 2021-03-08 2022-09-16 삼성전자주식회사 이미지 센서, 이미지 센서의 동작 방법, 그리고 이미지 센서를 포함하는 전자 장치

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760031A (en) * 1986-03-03 1988-07-26 California Institute Of Technology Producing CCD imaging sensor with flashed backside metal film
JP2917361B2 (ja) 1990-02-17 1999-07-12 ソニー株式会社 固体撮像素子
US5688715A (en) * 1990-03-29 1997-11-18 The United States Of America As Represented By The Secretary Of The Navy Excimer laser dopant activation of backside illuminated CCD's
US5880777A (en) * 1996-04-15 1999-03-09 Massachusetts Institute Of Technology Low-light-level imaging and image processing
JP3571924B2 (ja) * 1998-07-09 2004-09-29 株式会社東芝 固体撮像装置
JP2000196060A (ja) * 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法
JP4284752B2 (ja) 1999-05-31 2009-06-24 ソニー株式会社 固体撮像素子
US6168965B1 (en) * 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
JP2001339643A (ja) * 2000-05-30 2001-12-07 Nec Corp 固体撮像装置用黒レベル発生回路及び固体撮像装置
US7064785B2 (en) * 2002-02-07 2006-06-20 Eastman Kodak Company Apparatus and method of correcting for dark current in a solid state image sensor
JP3737466B2 (ja) * 2002-09-09 2006-01-18 Ｎｅｃエレクトロニクス株式会社 固体撮像装置及びその製造方法
US6960796B2 (en) * 2002-11-26 2005-11-01 Micron Technology, Inc. CMOS imager pixel designs with storage capacitor
US20040169248A1 (en) * 2003-01-31 2004-09-02 Intevac, Inc. Backside thinning of image array devices
US7005637B2 (en) * 2003-01-31 2006-02-28 Intevac, Inc. Backside thinning of image array devices
US7385636B2 (en) * 2004-04-30 2008-06-10 Eastman Kodak Company Low noise sample and hold circuit for image sensors
JP4211696B2 (ja) 2004-06-30 2009-01-21 ソニー株式会社 固体撮像装置の製造方法
US7615808B2 (en) * 2004-09-17 2009-11-10 California Institute Of Technology Structure for implementation of back-illuminated CMOS or CCD imagers
CN100536151C (zh) 2005-03-11 2009-09-02 富士通微电子株式会社 具有嵌入式光电二极管区域的图像传感器及其制造方法
US7247829B2 (en) * 2005-04-20 2007-07-24 Fujifilm Corporation Solid-state image sensor with an optical black area having pixels for detecting black level
JP4944399B2 (ja) * 2005-07-04 2012-05-30 キヤノン株式会社 固体撮像装置
US20070259463A1 (en) * 2006-05-02 2007-11-08 Youssef Abedini Wafer-level method for thinning imaging sensors for backside illumination
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
KR100791346B1 (ko) * 2006-12-05 2008-01-03 삼성전자주식회사 이미지 센서 제조 방법 및 이에 따라 제조된 이미지 센서
JP4619375B2 (ja) * 2007-02-21 2011-01-26 ソニー株式会社 固体撮像装置および撮像装置
JP4659783B2 (ja) * 2007-06-14 2011-03-30 富士フイルム株式会社 裏面照射型撮像素子の製造方法
JP4881833B2 (ja) * 2007-10-29 2012-02-22 富士フイルム株式会社 カラー画像撮像用固体撮像素子
JP5047243B2 (ja) * 2008-09-26 2012-10-10 シャープ株式会社 光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP5521312B2 (ja) * 2008-10-31 2014-06-11 ソニー株式会社 固体撮像装置及びその製造方法、並びに電子機器
KR101550067B1 (ko) * 2008-12-24 2015-09-03 인텔렉추얼디스커버리 주식회사 이미지 센서 및 이의 제조 방법
JP5453832B2 (ja) * 2009-02-20 2014-03-26 ソニー株式会社 固体撮像装置および撮像装置
JP5445147B2 (ja) * 2010-01-07 2014-03-19 富士通株式会社 リスト構造制御回路
US8233066B2 (en) * 2010-02-18 2012-07-31 Omnivision Technologies, Inc. Image sensor with improved black level calibration

Also Published As

Publication number Publication date
EP2253016A1 (en) 2010-11-24
US8482639B2 (en) 2013-07-09
CN103430311B (zh) 2016-02-17
US20090201393A1 (en) 2009-08-13
WO2009100038A1 (en) 2009-08-13
TWI541986B (zh) 2016-07-11
TW200952162A (en) 2009-12-16
CN103430311A (zh) 2013-12-04
EP2253016B1 (en) 2014-04-09

Similar Documents

Publication Publication Date Title
HK1190228A1 (zh) 用於背側照明圖像傳感器的黑色參考像素
HK1171870A1 (zh) 像素面積減小的圖像傳感器
GB0919421D0 (en) Beckside illuminated image sensor
GB201202317D0 (en) Image sensor pixel structure employing a shared floating diffusion
EP2241927A4 (en) IMAGE DISPLAY DEVICE
HK1183108A1 (zh) 圖像顯示裝置
EP2181349A4 (en) IMAGE CAPTURE DEVICE
EP2290402A4 (en) DISTANCE SENSOR AND DISTANCE IMAGE SENSOR
EP2259566A4 (en) IMAGE SCANNER
EP2190188A4 (en) BlLDSENSOR
EP2257065A4 (en) DISPLAY SYSTEM OF PERIPHERAL IMAGES FOR VEHICLE
EP2197032A4 (en) SEMICONDUCTOR IMAGE SENSOR
EP2210407A4 (en) DOUBLE SENSITIVITY IMAGE SENSOR
EP2277072A4 (en) RECORDING DEVICE
EP2417632A4 (en) BLLDSENSOR
EP2263074A4 (en) Scanning imaging device
GB201200089D0 (en) Color-optimized image sensor
WO2008122430A9 (de) Konzept zur erfassung von bildern mit subwellenlängenauflösung
EP2212731A4 (en) RECORDING DEVICE
GB0806050D0 (en) Detecting a border region in an image
EP2333764A4 (en) IMAGE DISPLAY DEVICE
HK1146843A1 (en) Glasses-mounted type image display device
EP2012114A4 (en) IMAGE SENSOR
GB0920434D0 (en) Image sensor arrays
GB2461757B (en) Image display system