HK1169367A1 - 高純度含硅產物及製造方法 - Google Patents

高純度含硅產物及製造方法

Info

Publication number
HK1169367A1
HK1169367A1 HK12110196.7A HK12110196A HK1169367A1 HK 1169367 A1 HK1169367 A1 HK 1169367A1 HK 12110196 A HK12110196 A HK 12110196A HK 1169367 A1 HK1169367 A1 HK 1169367A1
Authority
HK
Hong Kong
Prior art keywords
manufacture
high purity
containing products
purity silicon
silicon
Prior art date
Application number
HK12110196.7A
Other languages
English (en)
Inventor
諾曼．
．希恩曼
杰羅姆．
．多尼
居伊．勞倫斯．弗雷德里克森
安東尼奧．
．布蘭頓
Original Assignee
Si Options Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Si Options Llc filed Critical Si Options Llc
Publication of HK1169367A1 publication Critical patent/HK1169367A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0685—Preparation by carboreductive nitridation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/97—Preparation from SiO or SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
HK12110196.7A 2009-04-30 2012-10-16 高純度含硅產物及製造方法 HK1169367A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17437609P 2009-04-30 2009-04-30
US12/649,200 US8470279B2 (en) 2004-04-13 2009-12-29 High purity silicon-containing products and method of manufacture
PCT/US2010/032651 WO2010126927A1 (en) 2009-04-30 2010-04-28 High purity silicon-containing products and method of manufacture

Publications (1)

Publication Number Publication Date
HK1169367A1 true HK1169367A1 (zh) 2013-01-25

Family

ID=43032528

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12110196.7A HK1169367A1 (zh) 2009-04-30 2012-10-16 高純度含硅產物及製造方法

Country Status (6)

Country Link
US (1) US8470279B2 (zh)
EP (1) EP2424819A4 (zh)
JP (1) JP5661103B2 (zh)
CN (1) CN102421706B (zh)
HK (1) HK1169367A1 (zh)
WO (1) WO2010126927A1 (zh)

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US9971065B2 (en) 2013-03-14 2018-05-15 Gaurdian Glass, LLC Anti-reflection glass made from sol made by blending tri-alkoxysilane and tetra-alkoxysilane inclusive sols
US9828542B2 (en) 2013-03-15 2017-11-28 Melior Innovations, Inc. Methods of hydraulically fracturing and recovering hydrocarbons
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US10167366B2 (en) 2013-03-15 2019-01-01 Melior Innovations, Inc. Polysilocarb materials, methods and uses
US9499677B2 (en) 2013-03-15 2016-11-22 Melior Innovations, Inc. Black ceramic additives, pigments, and formulations
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9481781B2 (en) 2013-05-02 2016-11-01 Melior Innovations, Inc. Black ceramic additives, pigments, and formulations
US20170050337A1 (en) * 2013-05-02 2017-02-23 Melior Innovations, Inc. Formation apparatus, systems and methods for manufacturing polymer derived ceramic structures
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US11014819B2 (en) 2013-05-02 2021-05-25 Pallidus, Inc. Methods of providing high purity SiOC and SiC materials
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CN106282927A (zh) * 2016-08-05 2017-01-04 宁波高新区斯汀环保科技有限公司 一种钼改性碳化硅/铜复合电子封装材料的制备方法
CN107120641B (zh) * 2017-06-27 2023-06-06 哈尔滨工大华实环保科技有限公司 一种用于稻壳燃烧制备纳米二氧化硅的三循环流化床锅炉
JP6884880B2 (ja) * 2018-02-08 2021-06-09 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 冶金シリコンの分類方法
CN112188995A (zh) * 2018-03-02 2021-01-05 波尔纳工程公司 可持续的硅酸盐及其提取方法
CN109095931A (zh) * 2018-09-22 2018-12-28 新疆大学科学技术学院 一种利用水稻秸秆制备自分离的超细氮化硅纤维的方法
CN109206138B (zh) * 2018-10-26 2021-05-14 武汉工程大学 一种高球形度的碳化硅颗粒的制备方法
CN109546124A (zh) * 2018-11-23 2019-03-29 大连海事大学 一种锂离子电池复合负极材料C/SiOx的绿色制备方法
CN113508091B (zh) * 2019-03-05 2024-05-03 株式会社德山 氯硅烷类的制造方法
BR112022012982A2 (pt) * 2019-12-31 2022-09-13 Totalenergies Onetech Nanofluido para redução da migração de finos e recuperação de petróleo aprimorado, método de preparação e usos
DE102020102512A1 (de) * 2020-01-31 2021-08-05 ESK - SIC GmbH Verfahren zum Abtrennen von Verunreinigungen von Siliciumcarbid und gereinigtes Siliciumcarbid-Pulver
TWI784239B (zh) * 2020-02-13 2022-11-21 國立高雄大學 以環保碳黑結合矽源製備碳化矽系統及其方法
CN112038597B (zh) * 2020-08-25 2021-10-12 浙江锂宸新材料科技有限公司 一种多孔石墨与多孔硅复合负极材料及其制备方法和应用
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Also Published As

Publication number Publication date
EP2424819A4 (en) 2016-04-20
EP2424819A1 (en) 2012-03-07
JP2012525319A (ja) 2012-10-22
JP5661103B2 (ja) 2015-01-28
US20110008236A1 (en) 2011-01-13
WO2010126927A1 (en) 2010-11-04
CN102421706A (zh) 2012-04-18
CN102421706B (zh) 2016-01-20
US8470279B2 (en) 2013-06-25

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230430