HK1134345A1 - Exposure method, manufacturing method for electronic device, exposure device, and illumination optical apparatus - Google Patents

Exposure method, manufacturing method for electronic device, exposure device, and illumination optical apparatus

Info

Publication number
HK1134345A1
HK1134345A1 HK09111630.4A HK09111630A HK1134345A1 HK 1134345 A1 HK1134345 A1 HK 1134345A1 HK 09111630 A HK09111630 A HK 09111630A HK 1134345 A1 HK1134345 A1 HK 1134345A1
Authority
HK
Hong Kong
Prior art keywords
exposure
manufacturing
illumination optical
optical apparatus
electronic device
Prior art date
Application number
HK09111630.4A
Other languages
English (en)
Inventor
Naomasa Shiraishi
Original Assignee
Nikon Corp Kabushiki Kaisha Nikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp Kabushiki Kaisha Nikon filed Critical Nikon Corp Kabushiki Kaisha Nikon
Publication of HK1134345A1 publication Critical patent/HK1134345A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
HK09111630.4A 2005-01-14 2009-12-10 Exposure method, manufacturing method for electronic device, exposure device, and illumination optical apparatus HK1134345A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005007125 2005-01-14

Publications (1)

Publication Number Publication Date
HK1134345A1 true HK1134345A1 (en) 2010-04-23

Family

ID=36677743

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09111630.4A HK1134345A1 (en) 2005-01-14 2009-12-10 Exposure method, manufacturing method for electronic device, exposure device, and illumination optical apparatus

Country Status (7)

Country Link
EP (1) EP1840944A4 (xx)
JP (2) JP4830859B2 (xx)
KR (1) KR101270408B1 (xx)
CN (2) CN101103442B (xx)
HK (1) HK1134345A1 (xx)
TW (1) TWI428700B (xx)
WO (1) WO2006075720A1 (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101103442B (zh) * 2005-01-14 2011-05-11 株式会社尼康 照明光学装置
CN101128917B (zh) * 2005-02-25 2011-11-23 株式会社尼康 曝光方法、电子元件制造方法、曝光装置以及照明光学装置
US8431328B2 (en) 2007-02-22 2013-04-30 Nikon Corporation Exposure method, method for manufacturing flat panel display substrate, and exposure apparatus
KR100963036B1 (ko) * 2007-10-17 2010-06-14 주식회사 엘지화학 회절 격자를 이용한 레이저 간섭 리소그래피 방법
US8384997B2 (en) 2008-01-21 2013-02-26 Primesense Ltd Optical pattern projection
EP2235584B1 (en) * 2008-01-21 2020-09-16 Apple Inc. Optical designs for zero order reduction
JP5359624B2 (ja) * 2009-07-07 2013-12-04 株式会社ニコン 回折光学素子の製造方法および製造装置
JP6191598B2 (ja) * 2012-05-01 2017-09-06 株式会社ニコン 基板処理装置
JP5739375B2 (ja) * 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2848425B2 (ja) * 1992-06-02 1999-01-20 富士通株式会社 光露光方法
JP2995820B2 (ja) * 1990-08-21 1999-12-27 株式会社ニコン 露光方法及び方法，並びにデバイス製造方法
JP2647602B2 (ja) * 1991-08-29 1997-08-27 三菱電機株式会社 投影露光装置
JP3102086B2 (ja) * 1991-10-08 2000-10-23 株式会社ニコン 投影露光装置及び方法、並びに回路素子形成方法
JPH05326365A (ja) * 1992-05-21 1993-12-10 Nikon Corp 投影露光装置
JP3250563B2 (ja) * 1992-01-17 2002-01-28 株式会社ニコン フォトマスク、並びに露光方法及びその露光方法を用いた回路パターン素子製造方法、並びに露光装置
JPH05217839A (ja) * 1992-02-04 1993-08-27 Nikon Corp 投影露光装置
JP3428055B2 (ja) * 1992-11-05 2003-07-22 株式会社ニコン 照明光学装置、露光装置、半導体製造方法および露光方法
JP3368654B2 (ja) * 1994-03-23 2003-01-20 株式会社ニコン 照明光学装置及び転写方法
JPH07142338A (ja) * 1993-06-14 1995-06-02 Canon Inc 像投影方法及びそれを用いた露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
EP1347338B1 (en) * 1996-03-18 2006-05-31 Matsushita Electric Industrial Co., Ltd. Exposure apparatus
JPH11274060A (ja) * 1998-03-19 1999-10-08 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
JP4032501B2 (ja) * 1998-04-22 2008-01-16 株式会社ニコン 投影光学系の結像特性計測方法及び投影露光装置
JP2000082668A (ja) * 1999-10-07 2000-03-21 Nikon Corp 投影露光装置及び方法、並びに半導体素子の形成方法
JP2000106346A (ja) * 1999-11-05 2000-04-11 Nikon Corp 投影露光装置及び方法、並びに半導体素子の形成方法
JP2002244034A (ja) * 2001-02-21 2002-08-28 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
US6693701B2 (en) * 2001-05-29 2004-02-17 Ibsen Photonics A/S Method and apparatus for diffractive transfer of a mask grating
JP2003297727A (ja) * 2002-04-03 2003-10-17 Nikon Corp 照明光学装置、露光装置および露光方法
CN101103442B (zh) * 2005-01-14 2011-05-11 株式会社尼康 照明光学装置

Also Published As

Publication number Publication date
TWI428700B (zh) 2014-03-01
WO2006075720A1 (ja) 2006-07-20
CN101566803B (zh) 2013-01-02
CN101103442A (zh) 2008-01-09
JPWO2006075720A1 (ja) 2008-06-12
CN101566803A (zh) 2009-10-28
JP4830859B2 (ja) 2011-12-07
TW200629006A (en) 2006-08-16
KR20070092327A (ko) 2007-09-12
CN101103442B (zh) 2011-05-11
EP1840944A1 (en) 2007-10-03
JP2011243992A (ja) 2011-12-01
EP1840944A4 (en) 2011-11-02
KR101270408B1 (ko) 2013-06-07

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20170113