HK1110061A1 - Packaging for micro electro-mechanical systems and methods of fabricating thereof - Google Patents
Packaging for micro electro-mechanical systems and methods of fabricating thereofInfo
- Publication number
- HK1110061A1 HK1110061A1 HK08104290.1A HK08104290A HK1110061A1 HK 1110061 A1 HK1110061 A1 HK 1110061A1 HK 08104290 A HK08104290 A HK 08104290A HK 1110061 A1 HK1110061 A1 HK 1110061A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- fabricating
- packaging
- methods
- mechanical systems
- micro electro
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0108—Sacrificial polymer, ashing of organics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0136—Growing or depositing of a covering layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0154—Moulding a cap over the MEMS device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55317804P | 2004-03-15 | 2004-03-15 | |
PCT/US2005/008664 WO2005089348A2 (en) | 2004-03-15 | 2005-03-15 | Packaging for micro electro-mechanical systems and methods of fabricating thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1110061A1 true HK1110061A1 (en) | 2008-07-04 |
Family
ID=34994284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK08104290.1A HK1110061A1 (en) | 2004-03-15 | 2008-04-16 | Packaging for micro electro-mechanical systems and methods of fabricating thereof |
Country Status (7)
Country | Link |
---|---|
US (2) | US8476096B2 (ja) |
EP (1) | EP1758814A4 (ja) |
JP (1) | JP5133680B2 (ja) |
KR (1) | KR101335163B1 (ja) |
CN (1) | CN101094804B (ja) |
HK (1) | HK1110061A1 (ja) |
WO (1) | WO2005089348A2 (ja) |
Families Citing this family (47)
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JP2007222956A (ja) * | 2006-02-21 | 2007-09-06 | Seiko Epson Corp | Memsデバイスおよびmemsデバイスの製造方法 |
US8062497B2 (en) | 2006-03-28 | 2011-11-22 | Imec | Method for forming a hermetically sealed cavity |
US7767484B2 (en) | 2006-05-31 | 2010-08-03 | Georgia Tech Research Corporation | Method for sealing and backside releasing of microelectromechanical systems |
EP2082481B1 (en) * | 2006-10-09 | 2010-05-05 | Nxp B.V. | Resonator |
US7847669B2 (en) * | 2006-12-06 | 2010-12-07 | Georgia Tech Research Corporation | Micro-electromechanical switched tunable inductor |
WO2009073692A1 (en) * | 2007-12-03 | 2009-06-11 | Kolo Technologies, Inc. | Packaging and connecting electrostatic transducer arrays |
EP2218094A1 (en) * | 2007-12-03 | 2010-08-18 | Kolo Technologies, Inc. | Through-wafer interconnections in electrostatic transducer and array |
JP2009141036A (ja) * | 2007-12-05 | 2009-06-25 | Hitachi Media Electoronics Co Ltd | パッケージ構造体 |
WO2009147556A2 (en) * | 2008-05-27 | 2009-12-10 | Nxp B.V. | Microscopic structure packaging method and device with packaged microscopic structure |
CN101633490B (zh) * | 2008-07-25 | 2014-06-04 | 亚太优势微系统股份有限公司 | 具有微帽盖的元件、模组及其晶圆级封装方法 |
US8580596B2 (en) * | 2009-04-10 | 2013-11-12 | Nxp, B.V. | Front end micro cavity |
EP2266919A1 (en) | 2009-06-25 | 2010-12-29 | Nxp B.V. | Mems devices |
DE102009029199A1 (de) * | 2009-09-04 | 2011-03-10 | Robert Bosch Gmbh | Stressentkoppelte Aufbautechnik für substratlose Mold-Packages |
WO2012019092A1 (en) * | 2010-08-06 | 2012-02-09 | Promerus Llc | Polymer composition for microelectronic assembly |
TWI455265B (zh) * | 2010-11-01 | 2014-10-01 | 矽品精密工業股份有限公司 | 具微機電元件之封裝結構及其製法 |
DE102011007604A1 (de) * | 2011-04-18 | 2012-10-18 | Robert Bosch Gmbh | Mikroelektromechanische Schalldetektionsvorrichtung sowie Verfahren zur Herstellung einer solchen |
JP6034619B2 (ja) * | 2011-08-22 | 2016-11-30 | パナソニック株式会社 | Mems素子およびそれを用いた電気機器 |
FR2980034B1 (fr) * | 2011-09-08 | 2014-07-04 | Commissariat Energie Atomique | Procede de realisation d'une structure a cavite fermee hermetiquement et sous atmosphere controlee |
JP6063475B2 (ja) * | 2011-12-07 | 2017-01-18 | ジョージア・テック・リサーチ・コーポレーション | パッケージングに適合する、memsデバイスのウェハレベルキャッピング |
EP2731130A1 (en) | 2012-11-12 | 2014-05-14 | Nxp B.V. | Cavity package for an integrated circuit |
WO2015042700A1 (en) | 2013-09-24 | 2015-04-02 | Motion Engine Inc. | Mems components and method of wafer-level manufacturing thereof |
JP6339669B2 (ja) | 2013-07-08 | 2018-06-06 | モーション・エンジン・インコーポレーテッド | Memsデバイスおよび製造する方法 |
EP3028007A4 (en) | 2013-08-02 | 2017-07-12 | Motion Engine Inc. | Mems motion sensor and method of manufacturing |
JP6590812B2 (ja) | 2014-01-09 | 2019-10-16 | モーション・エンジン・インコーポレーテッド | 集積memsシステム |
US9416003B2 (en) * | 2014-02-24 | 2016-08-16 | Freescale Semiconductor, Inc. | Semiconductor die with high pressure cavity |
US9114976B1 (en) * | 2014-03-07 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement with stress release configuration |
CN104934331A (zh) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | 一种保护晶圆接合焊盘的方法 |
CN104934295A (zh) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | 一种晶圆正面的保护方法 |
WO2015150385A2 (en) * | 2014-03-31 | 2015-10-08 | Koninklijke Philips N.V. | Ic die, ultrasound probe, ultrasonic diagnostic system and method |
WO2015154173A1 (en) | 2014-04-10 | 2015-10-15 | Motion Engine Inc. | Mems pressure sensor |
WO2015184531A1 (en) | 2014-06-02 | 2015-12-10 | Motion Engine Inc. | Multi-mass mems motion sensor |
US9630835B2 (en) | 2014-08-25 | 2017-04-25 | Texas Instruments Incorporated | Wafer level packaging of MEMS |
CA3004760A1 (en) | 2014-12-09 | 2016-06-16 | Motion Engine Inc. | 3d mems magnetometer and associated methods |
GB2548033B (en) * | 2014-12-30 | 2021-03-24 | Halliburton Energy Services Inc | Subterranean formation characterization using microelectromechanical system (MEMS) devices |
WO2016108849A1 (en) | 2014-12-30 | 2016-07-07 | Halliburton Energy Services, Inc. | Subterranean formation characterization using microelectromechanical system (mems) devices |
CA3220839A1 (en) | 2015-01-15 | 2016-07-21 | Motion Engine Inc. | 3d mems device with hermetic cavity |
US9461005B2 (en) | 2015-02-12 | 2016-10-04 | Ampleon Netherlands B.V. | RF package with non-gaseous dielectric material |
DE102015223399B4 (de) * | 2015-11-26 | 2018-11-08 | Robert Bosch Gmbh | Verfahren zum Verpacken mindestens eines Halbleiterbauteils und Halbleitervorrichtung |
US9932224B2 (en) * | 2015-12-17 | 2018-04-03 | Globalfoundries Singapore Pte. Ltd. | Semiconductor devices with cavities and methods for fabricating semiconductor devices with cavities |
US10870575B2 (en) * | 2018-06-29 | 2020-12-22 | Infineon Technologies Dresden GmbH & Co. KG | Stressed decoupled micro-electro-mechanical system sensor |
DE102020102493A1 (de) | 2020-01-31 | 2021-08-05 | Tdk Corporation | Die mit Gehäuse und Montageverfahren |
US11180366B2 (en) | 2020-03-23 | 2021-11-23 | General Electric Company | Methods for forming a MEMS device layer on an active device layer and devices formed thereby |
CN112259528A (zh) * | 2020-09-28 | 2021-01-22 | 立讯电子科技(昆山)有限公司 | 具有双面选择性电磁屏蔽封装的sip结构及其制备方法 |
KR102213908B1 (ko) | 2020-10-28 | 2021-02-08 | 주식회사 삼정이엔씨 | 오일 회수기능을 구비하는 수소가스 충전기용 저온 냉각시스템 |
KR102202439B1 (ko) | 2020-10-28 | 2021-01-13 | 김승섭 | 수소가스 충전건 결빙 방지장치 |
KR102231721B1 (ko) | 2020-10-28 | 2021-03-25 | 김승섭 | 전자식 냉각밸브를 구비한 수소가스 충전기용 냉각시스템 |
KR102217530B1 (ko) | 2020-10-28 | 2021-02-19 | 주식회사 삼정이엔씨 | 수소가스 충전기용 냉각장치 제어시스템 |
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FI114755B (fi) * | 2001-10-01 | 2004-12-15 | Valtion Teknillinen | Menetelmä ontelorakenteen muodostamiseksi SOI-kiekolle sekä SOI-kiekon ontelorakenne |
CN1615537A (zh) * | 2001-12-12 | 2005-05-11 | 宾夕法尼亚州立大学 | 化学反应器模板:牺牲层的制备和模板的应用 |
US7045459B2 (en) * | 2002-02-19 | 2006-05-16 | Northrop Grumman Corporation | Thin film encapsulation of MEMS devices |
US20030183916A1 (en) * | 2002-03-27 | 2003-10-02 | John Heck | Packaging microelectromechanical systems |
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DE10227615A1 (de) * | 2002-06-20 | 2004-01-15 | Infineon Technologies Ag | Schicht-Anordnung und Verfahren zum Herstellen einer Schicht-Anordnung |
JP4574145B2 (ja) * | 2002-09-13 | 2010-11-04 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | エアギャップ形成 |
WO2004037711A2 (en) * | 2002-10-23 | 2004-05-06 | Rutgers, The State University Of New Jersey | Processes for hermetically packaging wafer level microscopic structures |
US6979872B2 (en) * | 2003-05-13 | 2005-12-27 | Rockwell Scientific Licensing, Llc | Modules integrating MEMS devices with pre-processed electronic circuitry, and methods for fabricating such modules |
US6936491B2 (en) * | 2003-06-04 | 2005-08-30 | Robert Bosch Gmbh | Method of fabricating microelectromechanical systems and devices having trench isolated contacts |
US7078796B2 (en) * | 2003-07-01 | 2006-07-18 | Freescale Semiconductor, Inc. | Corrosion-resistant copper bond pad and integrated device |
US7335972B2 (en) * | 2003-11-13 | 2008-02-26 | Sandia Corporation | Heterogeneously integrated microsystem-on-a-chip |
US7936497B2 (en) * | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
TWI302813B (en) * | 2006-01-11 | 2008-11-01 | Via Tech Inc | Circuit board and electronic assembly |
-
2005
- 2005-03-15 CN CN2005800154193A patent/CN101094804B/zh not_active Expired - Fee Related
- 2005-03-15 JP JP2007504046A patent/JP5133680B2/ja not_active Expired - Fee Related
- 2005-03-15 US US10/534,956 patent/US8476096B2/en active Active
- 2005-03-15 EP EP05725682A patent/EP1758814A4/en not_active Withdrawn
- 2005-03-15 WO PCT/US2005/008664 patent/WO2005089348A2/en active Application Filing
- 2005-03-15 KR KR1020067021362A patent/KR101335163B1/ko not_active IP Right Cessation
-
2008
- 2008-04-16 HK HK08104290.1A patent/HK1110061A1/xx not_active IP Right Cessation
-
2010
- 2010-06-10 US US12/797,649 patent/US8405170B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1758814A2 (en) | 2007-03-07 |
US20070273013A1 (en) | 2007-11-29 |
US8405170B2 (en) | 2013-03-26 |
WO2005089348A2 (en) | 2005-09-29 |
CN101094804B (zh) | 2011-12-28 |
EP1758814A4 (en) | 2010-12-15 |
WO2005089348A3 (en) | 2007-06-21 |
US8476096B2 (en) | 2013-07-02 |
JP2007529333A (ja) | 2007-10-25 |
KR101335163B1 (ko) | 2013-12-02 |
KR20070005674A (ko) | 2007-01-10 |
JP5133680B2 (ja) | 2013-01-30 |
CN101094804A (zh) | 2007-12-26 |
US20100307786A1 (en) | 2010-12-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20160315 |