HK1108068A1 - Nitride based laser diode and method of manufacturing nitride based laser diode - Google Patents

Nitride based laser diode and method of manufacturing nitride based laser diode

Info

Publication number
HK1108068A1
HK1108068A1 HK08101647.7A HK08101647A HK1108068A1 HK 1108068 A1 HK1108068 A1 HK 1108068A1 HK 08101647 A HK08101647 A HK 08101647A HK 1108068 A1 HK1108068 A1 HK 1108068A1
Authority
HK
Hong Kong
Prior art keywords
type
layer
layers
laser diode
nitride based
Prior art date
Application number
HK08101647.7A
Other languages
English (en)
Inventor
Czeslaw Skierbiszewski
Sylwester Porowski
Izabella Grzegory
Perlin Piotr
Leszczynski Michal
Siekacz Marcin
Feduniewicz Anna
Przemyslaw Wisniewski
Tadeusz Suski
Michal Bockowski
Original Assignee
Inst Wysokich Cisnien Polskiej
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Wysokich Cisnien Polskiej filed Critical Inst Wysokich Cisnien Polskiej
Publication of HK1108068A1 publication Critical patent/HK1108068A1/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
HK08101647.7A 2004-08-15 2008-02-14 Nitride based laser diode and method of manufacturing nitride based laser diode HK1108068A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL369597A PL211286B1 (pl) 2004-08-15 2004-08-15 Azotkowa dioda laserowa i sposób wytwarzania azotkowej diody laserowej
PCT/PL2005/000050 WO2006019326A1 (en) 2004-08-15 2005-08-09 Nitride based laser diode and method of manufacturing nitride based laser diode

Publications (1)

Publication Number Publication Date
HK1108068A1 true HK1108068A1 (en) 2008-04-25

Family

ID=35064928

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08101647.7A HK1108068A1 (en) 2004-08-15 2008-02-14 Nitride based laser diode and method of manufacturing nitride based laser diode

Country Status (11)

Country Link
US (1) US7936798B2 (ja)
EP (1) EP1787366B1 (ja)
JP (1) JP2008510298A (ja)
CN (1) CN100578877C (ja)
AT (1) ATE413710T1 (ja)
DE (1) DE602005010878D1 (ja)
DK (1) DK1787366T3 (ja)
ES (1) ES2317279T3 (ja)
HK (1) HK1108068A1 (ja)
PL (2) PL211286B1 (ja)
WO (1) WO2006019326A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2439973A (en) * 2006-07-13 2008-01-16 Sharp Kk Modifying the optical properties of a nitride optoelectronic device
PL385048A1 (pl) * 2008-04-28 2009-11-09 Topgan Spółka Z Ograniczoną Odpowiedzialnością Sposób wytwarzania domieszkowanej magnezem warstwy epitaksjalnej InxAlyGa1-x-yN o przewodnictwie typu p, dla której )0 x 0,2 a 0 y 0,3 oraz półprzewodnikowych struktur wielowarstwowych zawierających taką warstwę epitaksjalną
JP5316276B2 (ja) * 2009-01-23 2013-10-16 住友電気工業株式会社 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法
JP5540834B2 (ja) * 2010-03-30 2014-07-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
WO2012137426A1 (ja) * 2011-04-05 2012-10-11 古河電気工業株式会社 半導体光デバイス及びその製造方法
EP3767762B1 (en) 2019-07-14 2022-03-30 Instytut Wysokich Cisnien Polskiej Akademii Nauk Distributed feedback laser diode and method of making the same
CN114006266B (zh) * 2021-10-12 2023-10-13 厦门三安光电有限公司 激光二极管

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPH06152072A (ja) * 1992-11-16 1994-05-31 Asahi Chem Ind Co Ltd 半導体レーザ
JPH08264830A (ja) * 1995-03-23 1996-10-11 Furukawa Electric Co Ltd:The 発光素子の製造方法
US6266355B1 (en) * 1997-09-12 2001-07-24 Sdl, Inc. Group III-V nitride laser devices with cladding layers to suppress defects such as cracking
US6829273B2 (en) * 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
KR100425341B1 (ko) * 2000-02-08 2004-03-31 삼성전기주식회사 질화물 반도체 발광 소자
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP2002076519A (ja) * 2000-08-30 2002-03-15 Fujitsu Ltd 半導体レーザ
WO2002021604A1 (fr) * 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Dispositif emetteur de lumiere a semi-conducteurs au nitrure
JP4315583B2 (ja) * 2000-09-19 2009-08-19 パイオニア株式会社 Ｉｉｉ族窒化物系半導体レーザ素子
JP3729065B2 (ja) * 2000-12-05 2005-12-21 日立電線株式会社 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ
KR100906760B1 (ko) * 2001-03-28 2009-07-09 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
RU2296189C2 (ru) * 2001-06-06 2007-03-27 АММОНО Сп.з о.о. Способ и устройство для получения объемного монокристаллического галлийсодержащего нитрида (варианты)
MY139533A (en) * 2001-11-05 2009-10-30 Nichia Corp Nitride semiconductor device
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
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JP4422473B2 (ja) * 2003-01-20 2010-02-24 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
US7138648B2 (en) * 2003-12-17 2006-11-21 Palo Alto Research Center Incorporated Ultraviolet group III-nitride-based quantum well laser diodes

Also Published As

Publication number Publication date
PL369597A1 (pl) 2006-02-20
ATE413710T1 (de) 2008-11-15
CN100578877C (zh) 2010-01-06
PL1787366T3 (pl) 2009-04-30
JP2008510298A (ja) 2008-04-03
CN101036272A (zh) 2007-09-12
US20080107144A1 (en) 2008-05-08
DK1787366T3 (da) 2009-03-02
US7936798B2 (en) 2011-05-03
EP1787366B1 (en) 2008-11-05
WO2006019326A1 (en) 2006-02-23
ES2317279T3 (es) 2009-04-16
EP1787366A1 (en) 2007-05-23
DE602005010878D1 (de) 2008-12-18
PL211286B1 (pl) 2012-04-30

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20140809