ATE413710T1 - Auf nitrid basierende laserdiode und verfahren zur herstellung einer auf nitrid basierenden laserdiode - Google Patents

Auf nitrid basierende laserdiode und verfahren zur herstellung einer auf nitrid basierenden laserdiode

Info

Publication number
ATE413710T1
ATE413710T1 AT05769150T AT05769150T ATE413710T1 AT E413710 T1 ATE413710 T1 AT E413710T1 AT 05769150 T AT05769150 T AT 05769150T AT 05769150 T AT05769150 T AT 05769150T AT E413710 T1 ATE413710 T1 AT E413710T1
Authority
AT
Austria
Prior art keywords
type
layer
layers
laser diode
nitride
Prior art date
Application number
AT05769150T
Other languages
English (en)
Inventor
Czeslaw Skierbiszewski
Sylwester Porowski
Izabella Grzegory
Piotr Perlin
Michal Leszczynski
Marcin Siekacz
Anna Feduniewicz-Zmuda
Przemyslaw Wisniewski
Tadeusz Suski
Michal Bockowski
Original Assignee
Inst Wysokich Cisnien Polskiej
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Wysokich Cisnien Polskiej filed Critical Inst Wysokich Cisnien Polskiej
Application granted granted Critical
Publication of ATE413710T1 publication Critical patent/ATE413710T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT05769150T 2004-08-15 2005-08-09 Auf nitrid basierende laserdiode und verfahren zur herstellung einer auf nitrid basierenden laserdiode ATE413710T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL369597A PL211286B1 (pl) 2004-08-15 2004-08-15 Azotkowa dioda laserowa i sposób wytwarzania azotkowej diody laserowej

Publications (1)

Publication Number Publication Date
ATE413710T1 true ATE413710T1 (de) 2008-11-15

Family

ID=35064928

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05769150T ATE413710T1 (de) 2004-08-15 2005-08-09 Auf nitrid basierende laserdiode und verfahren zur herstellung einer auf nitrid basierenden laserdiode

Country Status (11)

Country Link
US (1) US7936798B2 (de)
EP (1) EP1787366B1 (de)
JP (1) JP2008510298A (de)
CN (1) CN100578877C (de)
AT (1) ATE413710T1 (de)
DE (1) DE602005010878D1 (de)
DK (1) DK1787366T3 (de)
ES (1) ES2317279T3 (de)
HK (1) HK1108068A1 (de)
PL (2) PL211286B1 (de)
WO (1) WO2006019326A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2439973A (en) * 2006-07-13 2008-01-16 Sharp Kk Modifying the optical properties of a nitride optoelectronic device
PL385048A1 (pl) * 2008-04-28 2009-11-09 Topgan Spółka Z Ograniczoną Odpowiedzialnością Sposób wytwarzania domieszkowanej magnezem warstwy epitaksjalnej InxAlyGa1-x-yN o przewodnictwie typu p, dla której )0 x 0,2 a 0 y 0,3 oraz półprzewodnikowych struktur wielowarstwowych zawierających taką warstwę epitaksjalną
JP5316276B2 (ja) * 2009-01-23 2013-10-16 住友電気工業株式会社 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法
JP5540834B2 (ja) * 2010-03-30 2014-07-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
CN103518297B (zh) * 2011-04-05 2015-11-25 古河电气工业株式会社 半导体光器件及其制造方法
EP3767762B1 (de) 2019-07-14 2022-03-30 Instytut Wysokich Cisnien Polskiej Akademii Nauk Laserdiode mit verteilter rückkopplung und deren herstellungsverfahren
CN114006266B (zh) * 2021-10-12 2023-10-13 厦门三安光电有限公司 激光二极管

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPH06152072A (ja) * 1992-11-16 1994-05-31 Asahi Chem Ind Co Ltd 半導体レーザ
JPH08264830A (ja) * 1995-03-23 1996-10-11 Furukawa Electric Co Ltd:The 発光素子の製造方法
US6266355B1 (en) * 1997-09-12 2001-07-24 Sdl, Inc. Group III-V nitride laser devices with cladding layers to suppress defects such as cracking
US6829273B2 (en) * 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
KR100425341B1 (ko) * 2000-02-08 2004-03-31 삼성전기주식회사 질화물 반도체 발광 소자
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP2002076519A (ja) * 2000-08-30 2002-03-15 Fujitsu Ltd 半導体レーザ
WO2002021604A1 (fr) * 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Dispositif emetteur de lumiere a semi-conducteurs au nitrure
JP4315583B2 (ja) * 2000-09-19 2009-08-19 パイオニア株式会社 Ｉｉｉ族窒化物系半導体レーザ素子
JP3729065B2 (ja) * 2000-12-05 2005-12-21 日立電線株式会社 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ
CN1254869C (zh) * 2001-03-28 2006-05-03 日亚化学工业株式会社 氮化物半导体元件
RU2296189C2 (ru) * 2001-06-06 2007-03-27 АММОНО Сп.з о.о. Способ и устройство для получения объемного монокристаллического галлийсодержащего нитрида (варианты)
TWI275220B (en) * 2001-11-05 2007-03-01 Nichia Corp Nitride semiconductor device
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
US6943377B2 (en) * 2002-11-21 2005-09-13 Sensor Electronic Technology, Inc. Light emitting heterostructure
JP4422473B2 (ja) * 2003-01-20 2010-02-24 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
US7138648B2 (en) * 2003-12-17 2006-11-21 Palo Alto Research Center Incorporated Ultraviolet group III-nitride-based quantum well laser diodes

Also Published As

Publication number Publication date
PL369597A1 (pl) 2006-02-20
ES2317279T3 (es) 2009-04-16
US20080107144A1 (en) 2008-05-08
CN100578877C (zh) 2010-01-06
HK1108068A1 (en) 2008-04-25
DE602005010878D1 (de) 2008-12-18
EP1787366B1 (de) 2008-11-05
WO2006019326A1 (en) 2006-02-23
JP2008510298A (ja) 2008-04-03
PL1787366T3 (pl) 2009-04-30
CN101036272A (zh) 2007-09-12
PL211286B1 (pl) 2012-04-30
DK1787366T3 (da) 2009-03-02
EP1787366A1 (de) 2007-05-23
US7936798B2 (en) 2011-05-03

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