HK1095388A1 - 浸沒式光刻透鏡的液壓補償 - Google Patents

浸沒式光刻透鏡的液壓補償

Info

Publication number
HK1095388A1
HK1095388A1 HK07102689.5A HK07102689A HK1095388A1 HK 1095388 A1 HK1095388 A1 HK 1095388A1 HK 07102689 A HK07102689 A HK 07102689A HK 1095388 A1 HK1095388 A1 HK 1095388A1
Authority
HK
Hong Kong
Prior art keywords
fluid pressure
pressure compensation
immersion lithography
lithography lens
lens
Prior art date
Application number
HK07102689.5A
Other languages
English (en)
Inventor
Douglas C Watson
W Thomas Novak
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1095388A1 publication Critical patent/HK1095388A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK07102689.5A 2004-06-17 2007-03-13 浸沒式光刻透鏡的液壓補償 HK1095388A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58051004P 2004-06-17 2004-06-17
PCT/US2004/042808 WO2006009573A1 (en) 2004-06-17 2004-12-20 Fluid pressure compensation for immersion lithography lens

Publications (1)

Publication Number Publication Date
HK1095388A1 true HK1095388A1 (zh) 2007-05-04

Family

ID=35785538

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07102689.5A HK1095388A1 (zh) 2004-06-17 2007-03-13 浸沒式光刻透鏡的液壓補償

Country Status (6)

Country Link
US (2) US7688421B2 (zh)
EP (1) EP1756663B1 (zh)
JP (1) JP4623095B2 (zh)
KR (1) KR101259190B1 (zh)
HK (1) HK1095388A1 (zh)
WO (1) WO2006009573A1 (zh)

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CN101813892B (zh) 2003-04-10 2013-09-25 株式会社尼康 沉浸式光刻装置及使用光刻工艺制造微器件的方法
KR101369016B1 (ko) 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR101441777B1 (ko) 2004-03-25 2014-09-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1756663B1 (en) * 2004-06-17 2015-12-16 Nikon Corporation Fluid pressure compensation for immersion lithography lens
US7944628B2 (en) * 2005-03-09 2011-05-17 Carl Zeiss Smt Gmbh Optical element unit
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
WO2007031182A1 (de) * 2005-09-13 2007-03-22 Carl Zeiss Smt Ag Mikrolithographische projektionsbelichtungsanlage und verfahren zur einstellung einer optischen abbildungseigenschaft derselben
US7649612B2 (en) * 2006-01-27 2010-01-19 Chartered Semiconductor Manufacturing Ltd. Phase shifting photolithography system
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8027023B2 (en) 2006-05-19 2011-09-27 Carl Zeiss Smt Gmbh Optical imaging device and method for reducing dynamic fluctuations in pressure difference
DE102006023876A1 (de) * 2006-05-19 2007-11-22 Carl Zeiss Smt Ag Optische Abbildungseinrichtung
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
EP2699967B1 (en) 2011-04-22 2023-09-13 ASML Netherlands B.V. Position determination in a lithography system using a substrate having a partially reflective position mark
WO2012144903A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system
WO2012158025A2 (en) * 2011-05-13 2012-11-22 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
JP6031292B2 (ja) * 2012-07-31 2016-11-24 東京エレクトロン株式会社 プローブカードへの基板当接方法
JP5993649B2 (ja) * 2012-07-31 2016-09-14 東京エレクトロン株式会社 プローブカードへの基板当接装置、基板当接装置を備えた基板検査装置、及びプローブカードへの基板当接方法
CN108292104B (zh) * 2015-11-20 2020-09-25 Asml荷兰有限公司 光刻设备及方法
US10948830B1 (en) 2019-12-23 2021-03-16 Waymo Llc Systems and methods for lithography

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KR101441777B1 (ko) 2004-03-25 2014-09-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
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EP1756663B1 (en) * 2004-06-17 2015-12-16 Nikon Corporation Fluid pressure compensation for immersion lithography lens
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Also Published As

Publication number Publication date
WO2006009573A1 (en) 2006-01-26
JP2008503088A (ja) 2008-01-31
US20100149513A1 (en) 2010-06-17
KR20070026824A (ko) 2007-03-08
US7688421B2 (en) 2010-03-30
EP1756663A4 (en) 2009-08-12
EP1756663B1 (en) 2015-12-16
KR101259190B1 (ko) 2013-04-29
JP4623095B2 (ja) 2011-02-02
EP1756663A1 (en) 2007-02-28
US20080316445A1 (en) 2008-12-25

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20191224