HK1041361A1 - 磁-电阻性存储器阵列的自测试 - Google Patents

磁-电阻性存储器阵列的自测试 Download PDF

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Publication number
HK1041361A1
HK1041361A1 HK02102603.3A HK02102603A HK1041361A1 HK 1041361 A1 HK1041361 A1 HK 1041361A1 HK 02102603 A HK02102603 A HK 02102603A HK 1041361 A1 HK1041361 A1 HK 1041361A1
Authority
HK
Hong Kong
Prior art keywords
test
circuit
array
resistance
mram
Prior art date
Application number
HK02102603.3A
Other languages
English (en)
Chinese (zh)
Inventor
A. Perner Frederick
J. Eldredge Kenneth
Tran Lung
Original Assignee
三星电子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星电子株式会社 filed Critical 三星电子株式会社
Publication of HK1041361A1 publication Critical patent/HK1041361A1/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
HK02102603.3A 2000-02-04 2002-04-08 磁-电阻性存储器阵列的自测试 HK1041361A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/498,588 US6584589B1 (en) 2000-02-04 2000-02-04 Self-testing of magneto-resistive memory arrays
US09/498,588 2000-02-04

Publications (1)

Publication Number Publication Date
HK1041361A1 true HK1041361A1 (zh) 2002-07-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
HK02102603.3A HK1041361A1 (zh) 2000-02-04 2002-04-08 磁-电阻性存储器阵列的自测试

Country Status (5)

Country Link
US (1) US6584589B1 (enExample)
EP (1) EP1132924A3 (enExample)
JP (1) JP4169484B2 (enExample)
CN (1) CN1252724C (enExample)
HK (1) HK1041361A1 (enExample)

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CN110082672B (zh) * 2018-01-25 2020-09-11 大唐移动通信设备有限公司 一种芯片内逻辑模型的测试方法及装置
CN112041928B (zh) 2018-04-30 2025-01-28 慧与发展有限责任合伙企业 忆阻器交叉杆阵列中模型/权重编程的加速
CN111223518B (zh) * 2018-11-27 2021-08-20 中电海康集团有限公司 用于阻性存储单元的测试结构及耐久性测试方法
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Also Published As

Publication number Publication date
EP1132924A3 (en) 2002-12-04
JP2001273799A (ja) 2001-10-05
CN1252724C (zh) 2006-04-19
US6584589B1 (en) 2003-06-24
JP4169484B2 (ja) 2008-10-22
EP1132924A2 (en) 2001-09-12
CN1317797A (zh) 2001-10-17

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