HK1026068A1 - A method of manufacturing a hetero-bipolar transistor and a laser diode ion the same substrate - Google Patents
A method of manufacturing a hetero-bipolar transistor and a laser diode ion the same substrateInfo
- Publication number
- HK1026068A1 HK1026068A1 HK00105329A HK00105329A HK1026068A1 HK 1026068 A1 HK1026068 A1 HK 1026068A1 HK 00105329 A HK00105329 A HK 00105329A HK 00105329 A HK00105329 A HK 00105329A HK 1026068 A1 HK1026068 A1 HK 1026068A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- hetero
- manufacturing
- laser diode
- bipolar transistor
- same substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9700432A SE511314C2 (sv) | 1997-02-07 | 1997-02-07 | Framställning av heterobipolär transistor och laserdiod på samma substrat |
PCT/SE1998/000210 WO1998035378A1 (en) | 1997-02-07 | 1998-02-06 | Manufacturing a heterobipolar transistor and a laser diode on the same substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1026068A1 true HK1026068A1 (en) | 2000-12-01 |
Family
ID=20405713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK00105329A HK1026068A1 (en) | 1997-02-07 | 2000-08-24 | A method of manufacturing a hetero-bipolar transistor and a laser diode ion the same substrate |
Country Status (12)
Country | Link |
---|---|
US (1) | US6335255B1 (sv) |
EP (1) | EP0972301B1 (sv) |
JP (1) | JP2001511948A (sv) |
KR (1) | KR100386928B1 (sv) |
CN (1) | CN1120522C (sv) |
AU (1) | AU6010598A (sv) |
CA (1) | CA2280024A1 (sv) |
DE (1) | DE69838288T2 (sv) |
HK (1) | HK1026068A1 (sv) |
SE (1) | SE511314C2 (sv) |
TW (1) | TW437109B (sv) |
WO (1) | WO1998035378A1 (sv) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7247892B2 (en) * | 2000-04-24 | 2007-07-24 | Taylor Geoff W | Imaging array utilizing thyristor-based pixel elements |
JP2002057405A (ja) * | 2000-08-07 | 2002-02-22 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
US6525348B1 (en) * | 2001-07-17 | 2003-02-25 | David C. Scott | Two terminal edge illuminated epilayer waveguide phototransistor |
US6531721B1 (en) * | 2001-12-27 | 2003-03-11 | Skyworks Solutions, Inc. | Structure for a heterojunction bipolar transistor |
US20040161006A1 (en) * | 2003-02-18 | 2004-08-19 | Ying-Lan Chang | Method and apparatus for improving wavelength stability for InGaAsN devices |
WO2005020287A2 (en) * | 2003-08-22 | 2005-03-03 | The Board Of Trustees Of The University Of Illinois | Semiconductor device and method |
US7446926B2 (en) | 2004-09-27 | 2008-11-04 | Idc, Llc | System and method of providing a regenerating protective coating in a MEMS device |
US7471855B2 (en) * | 2005-07-13 | 2008-12-30 | Alcatel-Lucent Usa Inc. | Monlithically coupled waveguide and phototransistor |
US8260151B2 (en) | 2008-04-18 | 2012-09-04 | Freescale Semiconductor, Inc. | Optical communication integration |
US8592745B2 (en) * | 2009-08-19 | 2013-11-26 | Luxtera Inc. | Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer |
JP2011199031A (ja) * | 2010-03-19 | 2011-10-06 | Denso Corp | 半導体装置及び半導体装置の製造方法 |
CN104485578B (zh) * | 2014-12-11 | 2017-05-10 | 中国科学院半导体研究所 | 一种晶体管激光器及其制作方法 |
US10134881B1 (en) * | 2017-05-18 | 2018-11-20 | Qualcomm Incorporated | Quantum well thermal sensing for power amplifier |
DE102018124576A1 (de) * | 2018-10-05 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines halbleiterbauelements mit durchführung einer plasmabehandlung und halbleiterbauelement |
US11271566B2 (en) * | 2018-12-14 | 2022-03-08 | Integrated Device Technology, Inc. | Digital logic compatible inputs in compound semiconductor circuits |
CN110459953A (zh) * | 2019-07-03 | 2019-11-15 | 潘瑶麟 | 一种实验室用单片集成互注入型侧节精调半导体激光器 |
CN111416274B (zh) * | 2020-02-27 | 2021-07-02 | 电子科技大学 | 一种反馈式多极型量子级联环形激光器 |
CN113130478A (zh) * | 2021-04-13 | 2021-07-16 | 厦门市三安集成电路有限公司 | 一种射频芯片及制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6373688A (ja) * | 1986-09-17 | 1988-04-04 | Mitsubishi Electric Corp | 半導体発光装置 |
JPH01143285A (ja) * | 1987-11-28 | 1989-06-05 | Mitsubishi Electric Corp | 半導体超格子の無秩序化方法及び半導体レーザ装置 |
US5164797A (en) * | 1988-06-17 | 1992-11-17 | Xerox Corporation | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
FR2635611B1 (fr) * | 1988-08-18 | 1990-10-19 | Centre Nat Rech Scient | Procede de neutralisation des atomes accepteurs dans inp de type p |
US5106764A (en) * | 1989-04-10 | 1992-04-21 | At&T Bell Laboratories | Device fabrication |
JP2566661B2 (ja) * | 1990-04-18 | 1996-12-25 | 三菱電機株式会社 | 不純物拡散方法 |
KR940005454B1 (ko) * | 1991-04-03 | 1994-06-18 | 삼성전자 주식회사 | 화합물반도체장치 |
US5202896A (en) * | 1991-07-16 | 1993-04-13 | The United States Of America As Represented By The Secretary Of The Air Force | Bipolar inversion channel field effect transistor laser |
US5239550A (en) * | 1991-12-03 | 1993-08-24 | University Of Connecticut | Transistor lasers |
US5283447A (en) * | 1992-01-21 | 1994-02-01 | Bandgap Technology Corporation | Integration of transistors with vertical cavity surface emitting lasers |
US5266794A (en) * | 1992-01-21 | 1993-11-30 | Bandgap Technology Corporation | Vertical-cavity surface emitting laser optical interconnect technology |
JPH0645633A (ja) * | 1992-07-22 | 1994-02-18 | Nec Corp | 半導体光スイッチとその駆動方法 |
-
1997
- 1997-02-07 SE SE9700432A patent/SE511314C2/sv not_active IP Right Cessation
-
1998
- 1998-02-06 CA CA002280024A patent/CA2280024A1/en not_active Abandoned
- 1998-02-06 US US09/019,971 patent/US6335255B1/en not_active Expired - Lifetime
- 1998-02-06 KR KR10-1999-7007160A patent/KR100386928B1/ko not_active IP Right Cessation
- 1998-02-06 CN CN98802409A patent/CN1120522C/zh not_active Expired - Fee Related
- 1998-02-06 WO PCT/SE1998/000210 patent/WO1998035378A1/en active IP Right Grant
- 1998-02-06 DE DE69838288T patent/DE69838288T2/de not_active Expired - Lifetime
- 1998-02-06 JP JP53424998A patent/JP2001511948A/ja not_active Ceased
- 1998-02-06 EP EP98903338A patent/EP0972301B1/en not_active Expired - Lifetime
- 1998-02-06 AU AU60105/98A patent/AU6010598A/en not_active Abandoned
- 1998-03-11 TW TW087103586A patent/TW437109B/zh not_active IP Right Cessation
-
2000
- 2000-08-24 HK HK00105329A patent/HK1026068A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6335255B1 (en) | 2002-01-01 |
DE69838288T2 (de) | 2008-05-15 |
SE9700432D0 (sv) | 1997-02-07 |
CN1246962A (zh) | 2000-03-08 |
WO1998035378A1 (en) | 1998-08-13 |
AU6010598A (en) | 1998-08-26 |
DE69838288D1 (de) | 2007-10-04 |
KR20000070895A (ko) | 2000-11-25 |
SE9700432L (sv) | 1998-08-08 |
JP2001511948A (ja) | 2001-08-14 |
CA2280024A1 (en) | 1998-08-13 |
TW437109B (en) | 2001-05-28 |
EP0972301A1 (en) | 2000-01-19 |
CN1120522C (zh) | 2003-09-03 |
SE511314C2 (sv) | 1999-09-06 |
KR100386928B1 (ko) | 2003-06-09 |
EP0972301B1 (en) | 2007-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20160206 |