FR2635611B1 - Procede de neutralisation des atomes accepteurs dans inp de type p - Google Patents
Procede de neutralisation des atomes accepteurs dans inp de type pInfo
- Publication number
- FR2635611B1 FR2635611B1 FR8810983A FR8810983A FR2635611B1 FR 2635611 B1 FR2635611 B1 FR 2635611B1 FR 8810983 A FR8810983 A FR 8810983A FR 8810983 A FR8810983 A FR 8810983A FR 2635611 B1 FR2635611 B1 FR 2635611B1
- Authority
- FR
- France
- Prior art keywords
- inp
- neutralization
- type
- acceptor atoms
- acceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 1
- 238000006386 neutralization reaction Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8810983A FR2635611B1 (fr) | 1988-08-18 | 1988-08-18 | Procede de neutralisation des atomes accepteurs dans inp de type p |
US07/474,715 US5059551A (en) | 1988-08-18 | 1989-08-17 | Process for neutralizing acceptor atoms in p-type inp |
JP1508986A JPH03505949A (ja) | 1988-08-18 | 1989-08-17 | P形Inpにおけるアクセプタ原子の中和方法 |
EP89909582A EP0386206A1 (fr) | 1988-08-18 | 1989-08-17 | PROCEDE DE NEUTRALISATION DES ATOMES ACCEPTEURS DANS InP DE TYPE p |
PCT/FR1989/000423 WO1990002416A1 (fr) | 1988-08-18 | 1989-08-17 | PROCEDE DE NEUTRALISATION DES ATOMES ACCEPTEURS DANS InP DE TYPE p |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8810983A FR2635611B1 (fr) | 1988-08-18 | 1988-08-18 | Procede de neutralisation des atomes accepteurs dans inp de type p |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2635611A1 FR2635611A1 (fr) | 1990-02-23 |
FR2635611B1 true FR2635611B1 (fr) | 1990-10-19 |
Family
ID=9369389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8810983A Expired - Lifetime FR2635611B1 (fr) | 1988-08-18 | 1988-08-18 | Procede de neutralisation des atomes accepteurs dans inp de type p |
Country Status (5)
Country | Link |
---|---|
US (1) | US5059551A (fr) |
EP (1) | EP0386206A1 (fr) |
JP (1) | JPH03505949A (fr) |
FR (1) | FR2635611B1 (fr) |
WO (1) | WO1990002416A1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5179029A (en) * | 1990-02-07 | 1993-01-12 | At&T Bell Laboratories | Hydrogen plasma passivation of GaAs |
GB2284708A (en) * | 1993-12-07 | 1995-06-14 | At & T Corp | Method for passivation of multi-quantum well infrared photodetectors (QWIPS) to reduce dark current and to improve dark current uniformity |
US5571339A (en) * | 1995-04-17 | 1996-11-05 | The Ohio State Univ. Research Found | Hydrogen passivated heteroepitaxial III-V photovoltaic devices grown on lattice-mismatched substrates, and process |
US5872387A (en) * | 1996-01-16 | 1999-02-16 | The Board Of Trustees Of The University Of Illinois | Deuterium-treated semiconductor devices |
US20020031920A1 (en) | 1996-01-16 | 2002-03-14 | Lyding Joseph W. | Deuterium treatment of semiconductor devices |
US5744202A (en) * | 1996-09-30 | 1998-04-28 | Xerox Corporation | Enhancement of hydrogenation of materials encapsulated by an oxide |
SE511314C2 (sv) * | 1997-02-07 | 1999-09-06 | Ericsson Telefon Ab L M | Framställning av heterobipolär transistor och laserdiod på samma substrat |
US6328801B1 (en) | 1997-07-25 | 2001-12-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and system for recovering and recirculating a deuterium-containing gas |
US6025281A (en) * | 1997-12-18 | 2000-02-15 | Motorola, Inc. | Passivation of oxide-compound semiconductor interfaces |
US20040175904A1 (en) * | 2003-03-04 | 2004-09-09 | Bor-Jen Wu | Method for activating P-type semiconductor layer |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597165A (en) * | 1983-11-28 | 1986-07-01 | At&T Bell Laboratories | Method of making integrated circuits employing ion-bombarded InP layers |
US4610731A (en) * | 1985-04-03 | 1986-09-09 | At&T Bell Laboratories | Shallow impurity neutralization |
FR2604828B1 (fr) * | 1986-10-06 | 1988-12-23 | Centre Nat Rech Scient | Procede de fabrication d'une diode p+nn+ et d'un transistor bipolaire comportant cette diode, utilisant l'effet de neutralisation des atomes donneurs par l'hydrogene atomique |
-
1988
- 1988-08-18 FR FR8810983A patent/FR2635611B1/fr not_active Expired - Lifetime
-
1989
- 1989-08-17 EP EP89909582A patent/EP0386206A1/fr not_active Ceased
- 1989-08-17 JP JP1508986A patent/JPH03505949A/ja active Pending
- 1989-08-17 WO PCT/FR1989/000423 patent/WO1990002416A1/fr not_active Application Discontinuation
- 1989-08-17 US US07/474,715 patent/US5059551A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1990002416A1 (fr) | 1990-03-08 |
JPH03505949A (ja) | 1991-12-19 |
EP0386206A1 (fr) | 1990-09-12 |
US5059551A (en) | 1991-10-22 |
FR2635611A1 (fr) | 1990-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |