FR2635611B1 - Procede de neutralisation des atomes accepteurs dans inp de type p - Google Patents

Procede de neutralisation des atomes accepteurs dans inp de type p

Info

Publication number
FR2635611B1
FR2635611B1 FR8810983A FR8810983A FR2635611B1 FR 2635611 B1 FR2635611 B1 FR 2635611B1 FR 8810983 A FR8810983 A FR 8810983A FR 8810983 A FR8810983 A FR 8810983A FR 2635611 B1 FR2635611 B1 FR 2635611B1
Authority
FR
France
Prior art keywords
inp
neutralization
type
acceptor atoms
acceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8810983A
Other languages
English (en)
Other versions
FR2635611A1 (fr
Inventor
Benoit Rose
Andrei Mircea
Jacques Chevallier
Jean-Claude Pesant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Etat Francais
Original Assignee
Centre National de la Recherche Scientifique CNRS
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Etat Francais filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR8810983A priority Critical patent/FR2635611B1/fr
Priority to PCT/FR1989/000423 priority patent/WO1990002416A1/fr
Priority to EP89909582A priority patent/EP0386206A1/fr
Priority to US07/474,715 priority patent/US5059551A/en
Priority to JP1508986A priority patent/JPH03505949A/ja
Publication of FR2635611A1 publication Critical patent/FR2635611A1/fr
Application granted granted Critical
Publication of FR2635611B1 publication Critical patent/FR2635611B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
FR8810983A 1988-08-18 1988-08-18 Procede de neutralisation des atomes accepteurs dans inp de type p Expired - Lifetime FR2635611B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8810983A FR2635611B1 (fr) 1988-08-18 1988-08-18 Procede de neutralisation des atomes accepteurs dans inp de type p
PCT/FR1989/000423 WO1990002416A1 (fr) 1988-08-18 1989-08-17 PROCEDE DE NEUTRALISATION DES ATOMES ACCEPTEURS DANS InP DE TYPE p
EP89909582A EP0386206A1 (fr) 1988-08-18 1989-08-17 PROCEDE DE NEUTRALISATION DES ATOMES ACCEPTEURS DANS InP DE TYPE p
US07/474,715 US5059551A (en) 1988-08-18 1989-08-17 Process for neutralizing acceptor atoms in p-type inp
JP1508986A JPH03505949A (ja) 1988-08-18 1989-08-17 Ｐ形Ｉｎｐにおけるアクセプタ原子の中和方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8810983A FR2635611B1 (fr) 1988-08-18 1988-08-18 Procede de neutralisation des atomes accepteurs dans inp de type p

Publications (2)

Publication Number Publication Date
FR2635611A1 FR2635611A1 (fr) 1990-02-23
FR2635611B1 true FR2635611B1 (fr) 1990-10-19

Family

ID=9369389

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8810983A Expired - Lifetime FR2635611B1 (fr) 1988-08-18 1988-08-18 Procede de neutralisation des atomes accepteurs dans inp de type p

Country Status (5)

Country Link
US (1) US5059551A (fr)
EP (1) EP0386206A1 (fr)
JP (1) JPH03505949A (fr)
FR (1) FR2635611B1 (fr)
WO (1) WO1990002416A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179029A (en) * 1990-02-07 1993-01-12 At&T Bell Laboratories Hydrogen plasma passivation of GaAs
GB2284708A (en) * 1993-12-07 1995-06-14 At & T Corp Method for passivation of multi-quantum well infrared photodetectors (QWIPS) to reduce dark current and to improve dark current uniformity
US5571339A (en) * 1995-04-17 1996-11-05 The Ohio State Univ. Research Found Hydrogen passivated heteroepitaxial III-V photovoltaic devices grown on lattice-mismatched substrates, and process
US5872387A (en) * 1996-01-16 1999-02-16 The Board Of Trustees Of The University Of Illinois Deuterium-treated semiconductor devices
US20020031920A1 (en) 1996-01-16 2002-03-14 Lyding Joseph W. Deuterium treatment of semiconductor devices
US5744202A (en) * 1996-09-30 1998-04-28 Xerox Corporation Enhancement of hydrogenation of materials encapsulated by an oxide
SE511314C2 (sv) * 1997-02-07 1999-09-06 Ericsson Telefon Ab L M Framställning av heterobipolär transistor och laserdiod på samma substrat
US6328801B1 (en) 1997-07-25 2001-12-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method and system for recovering and recirculating a deuterium-containing gas
US6025281A (en) * 1997-12-18 2000-02-15 Motorola, Inc. Passivation of oxide-compound semiconductor interfaces
US20040175904A1 (en) * 2003-03-04 2004-09-09 Bor-Jen Wu Method for activating P-type semiconductor layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597165A (en) * 1983-11-28 1986-07-01 At&T Bell Laboratories Method of making integrated circuits employing ion-bombarded InP layers
US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
FR2604828B1 (fr) * 1986-10-06 1988-12-23 Centre Nat Rech Scient Procede de fabrication d'une diode p+nn+ et d'un transistor bipolaire comportant cette diode, utilisant l'effet de neutralisation des atomes donneurs par l'hydrogene atomique

Also Published As

Publication number Publication date
FR2635611A1 (fr) 1990-02-23
US5059551A (en) 1991-10-22
JPH03505949A (ja) 1991-12-19
EP0386206A1 (fr) 1990-09-12
WO1990002416A1 (fr) 1990-03-08

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Legal Events

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TP Transmission of property
ST Notification of lapse