HK1004999A1 - Memory device and fabrication method - Google Patents
Memory device and fabrication methodInfo
- Publication number
- HK1004999A1 HK1004999A1 HK98104230A HK98104230A HK1004999A1 HK 1004999 A1 HK1004999 A1 HK 1004999A1 HK 98104230 A HK98104230 A HK 98104230A HK 98104230 A HK98104230 A HK 98104230A HK 1004999 A1 HK1004999 A1 HK 1004999A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- membrane
- insulation layer
- memory
- layer
- expansion
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Micromachines (AREA)
- Thin Film Transistor (AREA)
- Ceramic Capacitors (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95112547A EP0758128B1 (de) | 1995-08-09 | 1995-08-09 | Speichervorrichtung und Herstellungsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1004999A1 true HK1004999A1 (en) | 1998-12-18 |
Family
ID=8219507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98104230A HK1004999A1 (en) | 1995-08-09 | 1998-05-15 | Memory device and fabrication method |
Country Status (8)
Country | Link |
---|---|
US (1) | US5774414A (xx) |
EP (1) | EP0758128B1 (xx) |
JP (1) | JP3773994B2 (xx) |
KR (1) | KR100417481B1 (xx) |
AT (1) | ATE209818T1 (xx) |
DE (1) | DE59509883D1 (xx) |
HK (1) | HK1004999A1 (xx) |
TW (1) | TW312788B (xx) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19713173C2 (de) * | 1997-03-27 | 2001-02-15 | Siemens Ag | ROM-Speicher |
AU2005201840B2 (en) * | 1999-07-02 | 2007-01-18 | President And Fellows Of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
JP2003504857A (ja) * | 1999-07-02 | 2003-02-04 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ナノスコピックワイヤを用いる装置、アレイおよびその製造方法 |
US6911682B2 (en) * | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
FR2852441A1 (fr) * | 2003-03-14 | 2004-09-17 | St Microelectronics Sa | Dispositif de memoire |
JP4561072B2 (ja) | 2003-09-30 | 2010-10-13 | 株式会社日立製作所 | Memsスイッチを有する半導体装置 |
EP1751765A4 (en) * | 2004-05-24 | 2009-05-20 | Univ Boston | CONTROLLABLE NANOCHEMICAL MEMORY ELEMENT |
JP5054936B2 (ja) * | 2005-06-22 | 2012-10-24 | パナソニック株式会社 | 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法 |
KR100814390B1 (ko) | 2007-02-15 | 2008-03-18 | 삼성전자주식회사 | 메모리 소자 및 그 제조 방법. |
KR100850273B1 (ko) | 2007-03-08 | 2008-08-04 | 삼성전자주식회사 | 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법 |
KR100857085B1 (ko) | 2007-05-18 | 2008-09-05 | 한국과학기술원 | 기계적인 스위치를 이용한 메모리 어레이의 동작방법 |
KR100876948B1 (ko) | 2007-05-23 | 2009-01-09 | 삼성전자주식회사 | 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법 |
KR100876088B1 (ko) | 2007-05-23 | 2008-12-26 | 삼성전자주식회사 | 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
CH670914A5 (xx) * | 1986-09-10 | 1989-07-14 | Landis & Gyr Ag | |
US5216631A (en) * | 1990-11-02 | 1993-06-01 | Sliwa Jr John W | Microvibratory memory device |
-
1995
- 1995-08-09 AT AT95112547T patent/ATE209818T1/de not_active IP Right Cessation
- 1995-08-09 EP EP95112547A patent/EP0758128B1/de not_active Expired - Lifetime
- 1995-08-09 DE DE59509883T patent/DE59509883D1/de not_active Expired - Lifetime
-
1996
- 1996-07-24 TW TW085109021A patent/TW312788B/zh active
- 1996-08-01 JP JP21930996A patent/JP3773994B2/ja not_active Expired - Fee Related
- 1996-08-08 KR KR1019960032929A patent/KR100417481B1/ko not_active IP Right Cessation
- 1996-08-09 US US08/694,531 patent/US5774414A/en not_active Expired - Lifetime
-
1998
- 1998-05-15 HK HK98104230A patent/HK1004999A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0758128B1 (de) | 2001-11-28 |
DE59509883D1 (de) | 2002-01-10 |
JPH0963293A (ja) | 1997-03-07 |
EP0758128A1 (de) | 1997-02-12 |
US5774414A (en) | 1998-06-30 |
ATE209818T1 (de) | 2001-12-15 |
TW312788B (xx) | 1997-08-11 |
KR100417481B1 (ko) | 2004-06-04 |
JP3773994B2 (ja) | 2006-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20050809 |