HK1002301A1 - A balanced integrated semiconductor device operating with a parallel resonator circuit - Google Patents

A balanced integrated semiconductor device operating with a parallel resonator circuit

Info

Publication number
HK1002301A1
HK1002301A1 HK98101301A HK98101301A HK1002301A1 HK 1002301 A1 HK1002301 A1 HK 1002301A1 HK 98101301 A HK98101301 A HK 98101301A HK 98101301 A HK98101301 A HK 98101301A HK 1002301 A1 HK1002301 A1 HK 1002301A1
Authority
HK
Hong Kong
Prior art keywords
contact terminals
chip
resonator circuit
parallel resonator
semiconductor device
Prior art date
Application number
HK98101301A
Other languages
English (en)
Inventor
Marcel Wilhelm Rudol Roosmalen
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of HK1002301A1 publication Critical patent/HK1002301A1/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1256Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a variable inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014Structural aspects of oscillators
    • H03B2200/0028Structural aspects of oscillators based on a monolithic microwave integrated circuit [MMIC]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0088Reduction of noise
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0098Functional aspects of oscillators having a balanced output signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/08Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
HK98101301A 1996-01-22 1998-02-19 A balanced integrated semiconductor device operating with a parallel resonator circuit HK1002301A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96200152A EP0785616B1 (en) 1996-01-22 1996-01-22 A balanced integrated semiconductor device operating with a parallel resonator circuit

Publications (1)

Publication Number Publication Date
HK1002301A1 true HK1002301A1 (en) 1998-08-14

Family

ID=8223603

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98101301A HK1002301A1 (en) 1996-01-22 1998-02-19 A balanced integrated semiconductor device operating with a parallel resonator circuit

Country Status (10)

Country Link
US (1) US5844301A (xx)
EP (1) EP0785616B1 (xx)
JP (1) JPH1065442A (xx)
KR (1) KR100303176B1 (xx)
CN (1) CN1105416C (xx)
CA (1) CA2195493C (xx)
DE (1) DE69620859T2 (xx)
ES (1) ES2173245T3 (xx)
HK (1) HK1002301A1 (xx)
TW (1) TW365702B (xx)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070123251A1 (en) * 1996-10-23 2007-05-31 Riparius Ventures, Llc Remote internet telephony device
EP0909018B1 (de) * 1997-09-11 2002-01-02 Infineon Technologies AG Oszillator
EP0930653B1 (en) * 1998-01-13 2008-06-11 Lucent Technologies Inc. High frequency semiconductor device
DE69801307T2 (de) * 1998-03-31 2002-04-25 Lucent Technologies Inc., Murray Hill Verbesserungen an oder hinsichtlich integrierter Schaltungen für spannungsgesteuerte Oszillatoren
US6010939A (en) 1998-03-31 2000-01-04 Vlsi Technology, Inc. Methods for making shallow trench capacitive structures
US6020616A (en) * 1998-03-31 2000-02-01 Vlsi Technology, Inc. Automated design of on-chip capacitive structures for suppressing inductive noise
US6351033B1 (en) * 1999-10-06 2002-02-26 Agere Systems Guardian Corp. Multifunction lead frame and integrated circuit package incorporating the same
CN1211938C (zh) 2001-01-24 2005-07-20 皇家菲利浦电子有限公司 具有正交低噪声放大器的前端和高频接收机
US6528859B2 (en) * 2001-05-11 2003-03-04 Koninklijke Philips Electronics N.V. Foil wound low profile L-C power processor
DE10137434A1 (de) * 2001-07-31 2003-01-23 Infineon Technologies Ag Schaltungsanordnung zur Spannungs-/Stromwandlung
US6603352B2 (en) 2001-12-03 2003-08-05 Icefyre Semiconductor Corporation Switched-mode power amplifier integrally performing power combining
US20040012457A9 (en) * 2001-12-18 2004-01-22 Soltan Mehdi Frederik Internal impedance match in integrated circuits
CN1292533C (zh) 2002-03-15 2006-12-27 松下电器产业株式会社 平衡高频器件,平衡特性的改进方法和采用此类器件的平衡高频电路
US7342300B2 (en) * 2003-06-30 2008-03-11 Zarbana Digital Fund Llc Integrated circuit incorporating wire bond inductance
CN100530620C (zh) * 2005-01-24 2009-08-19 三洋电机株式会社 半导体装置
WO2007003224A1 (en) * 2005-07-05 2007-01-11 Freescale Semiconductor, Inc. Compensation for parasitic coupling between rf or microwave transistors in the same package
EP3544196B1 (en) * 2008-09-27 2023-09-13 WiTricity Corporation Wireless energy transfer systems
US9209744B1 (en) 2013-02-13 2015-12-08 M/A-Com Technology Solutions Holdings, Inc. Laminate-based voltage-controlled oscillator
JP6298111B2 (ja) * 2016-07-19 2018-03-20 ラピスセミコンダクタ株式会社 発振回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3963996A (en) * 1974-09-05 1976-06-15 Zenith Radio Corporation Oscillation system for integrated circuit
JPH0666652B2 (ja) * 1985-05-27 1994-08-24 株式会社日立製作所 電圧制御発振器
US5266821A (en) * 1988-05-31 1993-11-30 Micron Technology, Inc. Chip decoupling capacitor
DE68929487T2 (de) * 1989-02-14 2004-07-22 Koninklijke Philips Electronics N.V. Versorgungssteckerstift-Anordnung für eine integrierte Schaltung
JP2635180B2 (ja) * 1989-09-13 1997-07-30 株式会社日立製作所 信号終端回路
JPH0547992A (ja) * 1991-08-07 1993-02-26 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPH1065442A (ja) 1998-03-06
DE69620859T2 (de) 2002-10-31
TW365702B (en) 1999-08-01
ES2173245T3 (es) 2002-10-16
EP0785616B1 (en) 2002-04-24
CA2195493A1 (en) 1997-07-23
CA2195493C (en) 2005-04-12
DE69620859D1 (de) 2002-05-29
CN1105416C (zh) 2003-04-09
CN1163511A (zh) 1997-10-29
EP0785616A1 (en) 1997-07-23
KR100303176B1 (ko) 2001-11-22
US5844301A (en) 1998-12-01

Similar Documents

Publication Publication Date Title
HK1002301A1 (en) A balanced integrated semiconductor device operating with a parallel resonator circuit
KR940004950A (ko) 평형 출력단과 이미지 트랩을 갖는 이중 동조 회로
EP0930653A1 (en) High frequency semiconductor device
WO1994016502A1 (en) Method and apparatus for reducing local oscillator leakage in integrated circuit receivers
EP1049255A3 (en) Television receiver tuning circuit
MY118066A (en) Superheterodyne receiver apparatus
EP1081764A4 (en) HIGH FREQUENCY MODULE AND MANUFACTURING METHOD THEREFOR
JPH036107A (ja) 電圧制御発振器
CA2076857A1 (en) Circuit for an Output Resonant Cavity in a Frequency-Shift Transmitter Output Stage
CA2274335C (en) Oscillator module and communications device using the same
CA1196389A (en) Integrated single balanced mixer/oscillator with slot and hybrid coupler
DE3569179D1 (en) Tuning arrangement
KR910019403A (ko) 텔레비젼 수상기의 증폭기 회로
KR100602295B1 (ko) 고주파 신호 수신 장치
ATE130978T1 (de) Saugkreis-schaltungsanordnung.
GB9305883D0 (en) A voltage controller filter and a radio communications device comprising the same
JPH01147532U (xx)
JP3225593B2 (ja) 受信機のフロントエンド
JPS6025307A (ja) マイクロ波発振器
KR0177673B1 (ko) 고주파변조집적회로의 엘씨직렬 공진회로
CA2334822A1 (en) Oscillator circuit
JPH0165522U (xx)
JPS5946048U (ja) 受信機
MY125228A (en) Oscillator using a lumped element lc resonant circuit
JPS6318806A (ja) 局部発振回路

Legal Events

Date Code Title Description
PF Patent in force
PE Patent expired

Effective date: 20170120