ES2173245T3 - Un dispositivo semiconductor integrado equilibrado,que funciona con uncircuito resonador en paralelo. - Google Patents

Un dispositivo semiconductor integrado equilibrado,que funciona con uncircuito resonador en paralelo.

Info

Publication number
ES2173245T3
ES2173245T3 ES96200152T ES96200152T ES2173245T3 ES 2173245 T3 ES2173245 T3 ES 2173245T3 ES 96200152 T ES96200152 T ES 96200152T ES 96200152 T ES96200152 T ES 96200152T ES 2173245 T3 ES2173245 T3 ES 2173245T3
Authority
ES
Spain
Prior art keywords
plate
works
terminal
semiconductor device
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96200152T
Other languages
English (en)
Inventor
Roosmalen Marcel Wilhelm R Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Application granted granted Critical
Publication of ES2173245T3 publication Critical patent/ES2173245T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1256—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a variable inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014—Structural aspects of oscillators
    • H03B2200/0028—Structural aspects of oscillators based on a monolithic microwave integrated circuit [MMIC]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0088—Reduction of noise
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0098—Functional aspects of oscillators having a balanced output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/08—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)

Abstract

UN CIRCUITO DE RESPUESTA EN FRECUENCIA EQUILIBRADA (9) QUE COMPRENDE COMPONENTES DE CIRCUITO FORMADOS EN UNA PLACA SEMICONDUCTORA QUE TIENE UN PRIMER Y UN SEGUNDO TERMINAL DE CONTACTO DE LA PLACA CON CORRIENTE (12,13) QUE CONECTAN AL PRIMER Y SEGUNDO TERMINAL DE CONTACTO DE LA PLACA DE CORRIENTE (14,15), RESPECTIVAMENTE Y UN CIRCUITO RESONANTE PARALELO EQUILIBRADO (20) ACOPLADO A LOS TERMINALES DE CONTACTO (12-15). EL CIRCUITO RESONANTE (20) COMPRENDE UNA PARTE DE CONDENSADORES (C1'',C2'',C3'') Y UNA PARTE INDUCTIVA (L1'', L2''). LA PARTE (C1'') DE LA PARTE DE CONDENSADORES ESTA CONECTADA A LA PLACA QUE CONDUCE ENTRE EL PRIMER Y SEGUNDO TERMINAL (12,13) DE LA PLACA QUE CONDUCE. OTRA PARTE DE LA PARTE DE CONDENSADORES (C2'', C3'') Y LA PARTE DE LA INDUCTANCIA (L1'',L2'') ESTA CONECTADA EN SERIE A LA PLACA QUE NO CONDUCE ENTRE EL PRIMER Y SEGUNDO TERMINAL (12,13) DE LA PLACA, QUE NO CONDUCE, DE MANERA QUE LOS TERMINALES DE CONTACTO (12-15) ESTAN COMPRIMIDOS EN UN UNICO BUCLE RESONANTE, QUE PRODUCE ESENCIALMENTE SEÑALES DE RESONANCIA NO PARASITAS.
ES96200152T 1996-01-22 1996-01-22 Un dispositivo semiconductor integrado equilibrado,que funciona con uncircuito resonador en paralelo. Expired - Lifetime ES2173245T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96200152A EP0785616B1 (en) 1996-01-22 1996-01-22 A balanced integrated semiconductor device operating with a parallel resonator circuit

Publications (1)

Publication Number Publication Date
ES2173245T3 true ES2173245T3 (es) 2002-10-16

Family

ID=8223603

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96200152T Expired - Lifetime ES2173245T3 (es) 1996-01-22 1996-01-22 Un dispositivo semiconductor integrado equilibrado,que funciona con uncircuito resonador en paralelo.

Country Status (10)

Country Link
US (1) US5844301A (es)
EP (1) EP0785616B1 (es)
JP (1) JPH1065442A (es)
KR (1) KR100303176B1 (es)
CN (1) CN1105416C (es)
CA (1) CA2195493C (es)
DE (1) DE69620859T2 (es)
ES (1) ES2173245T3 (es)
HK (1) HK1002301A1 (es)
TW (1) TW365702B (es)

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US20070123251A1 (en) * 1996-10-23 2007-05-31 Riparius Ventures, Llc Remote internet telephony device
DE59802788D1 (de) * 1997-09-11 2002-02-28 Infineon Technologies Ag Oszillator
DE69839597D1 (de) * 1998-01-13 2008-07-24 Lucent Technologies Inc Hochfrequenzhalbleiteranordnung
US6010939A (en) 1998-03-31 2000-01-04 Vlsi Technology, Inc. Methods for making shallow trench capacitive structures
EP0948127B1 (en) * 1998-03-31 2001-08-08 Lucent Technologies Inc. Improvements in or relating to integrated circuits for voltage controlled oscillators
US6020616A (en) * 1998-03-31 2000-02-01 Vlsi Technology, Inc. Automated design of on-chip capacitive structures for suppressing inductive noise
US6351033B1 (en) * 1999-10-06 2002-02-26 Agere Systems Guardian Corp. Multifunction lead frame and integrated circuit package incorporating the same
EP1256179B1 (en) 2001-01-24 2008-03-05 Nxp B.V. Front end and high frequency receiver having quadrature low noise amplifier
US6528859B2 (en) * 2001-05-11 2003-03-04 Koninklijke Philips Electronics N.V. Foil wound low profile L-C power processor
DE10137434A1 (de) * 2001-07-31 2003-01-23 Infineon Technologies Ag Schaltungsanordnung zur Spannungs-/Stromwandlung
US6603352B2 (en) 2001-12-03 2003-08-05 Icefyre Semiconductor Corporation Switched-mode power amplifier integrally performing power combining
US20040012457A9 (en) * 2001-12-18 2004-01-22 Soltan Mehdi Frederik Internal impedance match in integrated circuits
EP1345323B1 (en) 2002-03-15 2005-02-09 Matsushita Electric Industrial Co., Ltd. Balanced high-frequency device and balance-characteristics improving method and balanced high-frequency circuit using the same
US7342300B2 (en) * 2003-06-30 2008-03-11 Zarbana Digital Fund Llc Integrated circuit incorporating wire bond inductance
CN100530620C (zh) * 2005-01-24 2009-08-19 三洋电机株式会社 半导体装置
US7639083B2 (en) * 2005-07-05 2009-12-29 Freescale Semiconductor, Inc. Compensation for parasitic coupling between RF or microwave transistors in the same package
CA2738654C (en) * 2008-09-27 2019-02-26 Witricity Corporation Wireless energy transfer systems
US9209744B1 (en) 2013-02-13 2015-12-08 M/A-Com Technology Solutions Holdings, Inc. Laminate-based voltage-controlled oscillator
JP6298111B2 (ja) * 2016-07-19 2018-03-20 ラピスセミコンダクタ株式会社 発振回路

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US3963996A (en) * 1974-09-05 1976-06-15 Zenith Radio Corporation Oscillation system for integrated circuit
JPH0666652B2 (ja) * 1985-05-27 1994-08-24 株式会社日立製作所 電圧制御発振器
US5266821A (en) * 1988-05-31 1993-11-30 Micron Technology, Inc. Chip decoupling capacitor
ES2208631T3 (es) * 1989-02-14 2004-06-16 Koninklijke Philips Electronics N.V. Disposicion de clavijas de alimentacion para un circuito integrado.
JP2635180B2 (ja) * 1989-09-13 1997-07-30 株式会社日立製作所 信号終端回路
JPH0547992A (ja) * 1991-08-07 1993-02-26 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
DE69620859D1 (de) 2002-05-29
CA2195493A1 (en) 1997-07-23
JPH1065442A (ja) 1998-03-06
KR100303176B1 (ko) 2001-11-22
DE69620859T2 (de) 2002-10-31
US5844301A (en) 1998-12-01
CN1105416C (zh) 2003-04-09
TW365702B (en) 1999-08-01
EP0785616B1 (en) 2002-04-24
EP0785616A1 (en) 1997-07-23
CA2195493C (en) 2005-04-12
CN1163511A (zh) 1997-10-29
HK1002301A1 (en) 1998-08-14

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