GB908370A - A method of zone-melting a rod of crystalline material - Google Patents

A method of zone-melting a rod of crystalline material

Info

Publication number
GB908370A
GB908370A GB1892560A GB1892560A GB908370A GB 908370 A GB908370 A GB 908370A GB 1892560 A GB1892560 A GB 1892560A GB 1892560 A GB1892560 A GB 1892560A GB 908370 A GB908370 A GB 908370A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
melting
compression
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1892560A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB908370A publication Critical patent/GB908370A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture And Refinement Of Metals (AREA)
GB1892560A 1959-05-29 1960-05-27 A method of zone-melting a rod of crystalline material Expired GB908370A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63193A DE1148525B (de) 1959-05-29 1959-05-29 Verfahren zum Vergroessern des Stabquerschnittes beim tiegellosen Zonenschmelzen eines Stabes aus kristallinem Material, insbesondere Halbleitermaterial

Publications (1)

Publication Number Publication Date
GB908370A true GB908370A (en) 1962-10-17

Family

ID=7496200

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1892560A Expired GB908370A (en) 1959-05-29 1960-05-27 A method of zone-melting a rod of crystalline material

Country Status (4)

Country Link
CH (1) CH378547A (en:Method)
DE (1) DE1148525B (en:Method)
GB (1) GB908370A (en:Method)
NL (2) NL252060A (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3249406A (en) * 1963-01-08 1966-05-03 Dow Corning Necked float zone processing of silicon rod
US3351433A (en) * 1962-12-12 1967-11-07 Siemens Ag Method of producing monocrystalline semiconductor rods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1719021B1 (de) * 1963-07-13 1969-09-11 Siemens Ag Verfahren zum Verkleinern des Querschnittes eines lotrecht angeordneten Stabes aus Halbleitermaterial

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351433A (en) * 1962-12-12 1967-11-07 Siemens Ag Method of producing monocrystalline semiconductor rods
US3249406A (en) * 1963-01-08 1966-05-03 Dow Corning Necked float zone processing of silicon rod

Also Published As

Publication number Publication date
DE1148525B (de) 1963-05-16
CH378547A (de) 1964-06-15
NL252060A (en:Method)
NL108958C (en:Method)

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