GB850119A - Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor element - Google Patents
Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor elementInfo
- Publication number
- GB850119A GB850119A GB12377/58A GB1237758A GB850119A GB 850119 A GB850119 A GB 850119A GB 12377/58 A GB12377/58 A GB 12377/58A GB 1237758 A GB1237758 A GB 1237758A GB 850119 A GB850119 A GB 850119A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor
- electrode
- welding
- electrodes
- cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 title abstract 10
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000003466 welding Methods 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 2
- 238000007373 indentation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K11/00—Resistance welding; Severing by resistance heating
- B23K11/002—Resistance welding; Severing by resistance heating specially adapted for particular articles or work
- B23K11/0026—Welding of thin articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Resistance Welding (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES53212A DE1034274B (de) | 1957-04-18 | 1957-04-18 | Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes |
| DES0056233 | 1957-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB850119A true GB850119A (en) | 1960-09-28 |
Family
ID=25995379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB12377/58A Expired GB850119A (en) | 1957-04-18 | 1958-04-18 | Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor element |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH363725A (enrdf_load_stackoverflow) |
| DE (2) | DE1034274B (enrdf_load_stackoverflow) |
| FR (1) | FR1205947A (enrdf_load_stackoverflow) |
| GB (1) | GB850119A (enrdf_load_stackoverflow) |
| NL (2) | NL112688C (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1256802B (de) * | 1957-04-18 | 1967-12-21 | Siemens Ag | Vorrichtung zum Durchfuehren des Verfahrens zum Herstellen einer festen Verbindung einer draht- oder bandfoermigen Zuleitungselektrode mit einer flaechenhaften Kontaktelektrode eines Halbleiterbauelements |
| DE1240995B (de) * | 1960-11-02 | 1967-05-24 | Siemens Ag | Verfahren zum Kontaktieren einer Elektrode eines Halbleiterelementes mit einem elektrischen Anschlussleiter |
| NL270438A (enrdf_load_stackoverflow) * | 1960-11-02 | 1900-01-01 | ||
| NL260810A (enrdf_load_stackoverflow) * | 1961-02-03 | |||
| NL283249A (enrdf_load_stackoverflow) * | 1961-09-19 | 1900-01-01 | ||
| US3197608A (en) * | 1962-01-23 | 1965-07-27 | Sylvania Electric Prod | Method of manufacture of semiconductor devices |
| US3132239A (en) * | 1962-04-25 | 1964-05-05 | United Aircraft Corp | Electron beam compression welding |
| DE1295697B (de) * | 1962-05-23 | 1969-05-22 | Walter Brandt Gmbh | Halbleiterbauelement und Verfahren zu seiner Herstellung |
| US4171477A (en) * | 1976-03-16 | 1979-10-16 | International Business Machines Corporation | Micro-surface welding |
| JPS5842262A (ja) * | 1981-09-07 | 1983-03-11 | Toshiba Corp | 混成集積回路のリ−ド線接続方法 |
| DE3426200C2 (de) * | 1984-07-17 | 1994-02-10 | Asea Brown Boveri | Überbrückungselement |
| DE3426199C2 (de) * | 1984-07-17 | 1994-02-03 | Asea Brown Boveri | Überbrückungselement |
| DE3609654A1 (de) * | 1985-03-22 | 1986-09-25 | Copal Electronics Co., Ltd., Tokio/Tokyo | Regelwiderstand |
| JPH0690962B2 (ja) * | 1986-03-31 | 1994-11-14 | 日本メクトロン株式会社 | Ｐｔｃ素子の製造法 |
| JPH0690964B2 (ja) * | 1986-03-31 | 1994-11-14 | 日本メクトロン株式会社 | Ｐｔｃ素子の製造法 |
-
0
- NL NL226947D patent/NL226947A/xx unknown
- DE DENDAT1050449D patent/DE1050449B/de active Pending
- NL NL112688D patent/NL112688C/xx active
-
1957
- 1957-04-18 DE DES53212A patent/DE1034274B/de active Pending
-
1958
- 1958-04-16 CH CH5838758A patent/CH363725A/de unknown
- 1958-04-17 FR FR1205947D patent/FR1205947A/fr not_active Expired
- 1958-04-18 GB GB12377/58A patent/GB850119A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL112688C (enrdf_load_stackoverflow) | 1900-01-01 |
| DE1050449B (enrdf_load_stackoverflow) | 1959-02-12 |
| DE1034274B (de) | 1958-07-17 |
| NL226947A (enrdf_load_stackoverflow) | 1900-01-01 |
| FR1205947A (fr) | 1960-02-05 |
| CH363725A (de) | 1962-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB850119A (en) | Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor element | |
| US5549762A (en) | Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers | |
| US3192454A (en) | Semiconductor apparatus with concentric pressure contact electrodes | |
| US3274667A (en) | Method of permanently contacting an electronic semiconductor | |
| GB751278A (en) | Method and apparatus for making semiconductor devices | |
| GB1312171A (en) | Semiconductor arrangements for use as fixed value stores | |
| GB877071A (en) | Semiconductor device | |
| GB928436A (en) | Improvements in semi-conductor devices and methods of manufacturing them | |
| GB842957A (en) | Method and device for making connections in transistors | |
| GB992588A (en) | Semi-conductor devices | |
| GB1247466A (en) | Method for determining excess carrier lifetime in semiconductor devices | |
| GB954534A (en) | Electrode contact structures and method of providing the same | |
| GB1177031A (en) | Pressure Assembled Semiconductor Device using Massive Flexibly Mounted Terminals | |
| GB1330509A (en) | Manufacture of semiconductor devices | |
| GB1230266A (enrdf_load_stackoverflow) | ||
| GB1241431A (en) | Hermetically sealed electrical device | |
| GB812550A (en) | Improvements in or relating to semiconductor signal translating devices | |
| CN210837806U (zh) | 压电传感器、封装电路板及贴合封装器件 | |
| GB803583A (en) | Improvements in or relating to semi-conductive devices | |
| GB776085A (en) | Improvements in or relating to semi-conductor devices | |
| JPS567475A (en) | Semiconductor device | |
| GB780723A (en) | A transistor | |
| US3255394A (en) | Transistor electrode connection | |
| GB999407A (en) | Double-anode type zener diode | |
| SU483709A1 (ru) | Элемент пам ти |