GB780723A - A transistor - Google Patents

A transistor

Info

Publication number
GB780723A
GB780723A GB22435/53A GB2243553A GB780723A GB 780723 A GB780723 A GB 780723A GB 22435/53 A GB22435/53 A GB 22435/53A GB 2243553 A GB2243553 A GB 2243553A GB 780723 A GB780723 A GB 780723A
Authority
GB
United Kingdom
Prior art keywords
cavity
aug
emitter
type
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22435/53A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB780723A publication Critical patent/GB780723A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01084—Polonium [Po]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Electron Tubes For Measurement (AREA)
  • Bipolar Transistors (AREA)

Abstract

780,723. Transistors. LICENTIA PATENTVERWALTUNGS-GES. Aug. 14, 1953 (Aug. 18, 1952; Aug. 18, 1952; Aug. 18, 1952], No. 22435/53. Class 37. In a transistor comprising a semi-conductor body mainly of one conductivity type but having one or more regions of opposite type, and provided with base, emitter and collector electrodes, at least one of the collector or emitter electrodes is a pointed wire the point, of which is located in a narrow cavity in the surface of the body. In the transistor shown in Fig. 1, a cavity 3 and an associated localized region 5 of P-type Ge are formed in N-type Ge body 1 by passing pulses of current through a pointed conductor in contact with the body. A collector electrode 4 of Ni or a noble metal, e.g. Au, or an alloy thereof, is inserted in the cavity and preferably welded or soldered to the wall thereof by a current pulse. The cavity is about 10 microns across and an emitter 7, e.g. of Wo, is placed about 10 Á from the junction 6. In an alternative form there are two collector electrodes of the above type. In this case the emitter may be disposed between them in a cavity. Specification 780,724 is referred to.
GB22435/53A 1952-08-18 1953-08-14 A transistor Expired GB780723A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DEL13150A DE969748C (en) 1952-08-18 1952-08-18 Process for the production of a controlled, electrically asymmetrically conductive semiconductor system
DEL13149A DE969508C (en) 1952-08-18 1952-08-18 Method for producing a controlled, electrically asymmetrically conductive semiconductor arrangement
DEL13147A DE966905C (en) 1952-08-18 1952-08-18 Process for the production of electrically asymmetrically conductive systems

Publications (1)

Publication Number Publication Date
GB780723A true GB780723A (en) 1957-08-07

Family

ID=27211354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB22435/53A Expired GB780723A (en) 1952-08-18 1953-08-14 A transistor
GB21704/55A Expired GB780724A (en) 1952-08-18 1953-08-24 A method of manufacturing electric asymmetrically conductive systems

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB21704/55A Expired GB780724A (en) 1952-08-18 1953-08-24 A method of manufacturing electric asymmetrically conductive systems

Country Status (4)

Country Link
DE (3) DE966905C (en)
FR (1) FR1088388A (en)
GB (2) GB780723A (en)
NL (1) NL105742C (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1129625B (en) * 1958-05-23 1962-05-17 Telefunken Patent Drift transistor in which the specific resistance in the base zone increases from the emitter to the collector zone
US3044909A (en) * 1958-10-23 1962-07-17 Shockley William Semiconductive wafer and method of making the same
FR1288086A (en) * 1961-01-30 1962-03-24 Lignes Telegraph Telephon Parametric diode improvements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2502488A (en) * 1948-09-24 1950-04-04 Bell Telephone Labor Inc Semiconductor amplifier
US2586080A (en) * 1949-10-11 1952-02-19 Bell Telephone Labor Inc Semiconductive signal translating device
DE1635713U (en) * 1950-09-12 1952-03-13 Siemens Ag SEMI-CONDUCTORS FOR DIODES OR CRYSTAL AMPLIFIERS.

Also Published As

Publication number Publication date
DE969508C (en) 1958-06-12
NL105742C (en) 1963-03-15
FR1088388A (en) 1955-03-07
GB780724A (en) 1957-08-07
DE969748C (en) 1958-07-10
DE966905C (en) 1957-09-19

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