GB834821A - Improvements in and relating to methods and apparatus for jet electrolytic etching orplating - Google Patents

Improvements in and relating to methods and apparatus for jet electrolytic etching orplating

Info

Publication number
GB834821A
GB834821A GB18921/56A GB1892156A GB834821A GB 834821 A GB834821 A GB 834821A GB 18921/56 A GB18921/56 A GB 18921/56A GB 1892156 A GB1892156 A GB 1892156A GB 834821 A GB834821 A GB 834821A
Authority
GB
United Kingdom
Prior art keywords
workpiece
electrolyte
jets
jet
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18921/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Publication of GB834821A publication Critical patent/GB834821A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

834,821. Electrolytic jet-etching. PHILCO CORPORATION. June 19, 1956 [June 23, 1955; Jan. 17, 1956], No. 18921/56. Class 41. A method of treating a body of semi-conductive material by directing on to the said body a jet of liquid electrolyte carrying an electrical current which method includes maintaining a pressure gradient in the atmosphere region overlying the area of impingement of the liquid column of the electrolyte on the body in such a manner as to prevent the accumulation of electrolyte at said area which would otherwise form a coherent liquid body surrounding the end of the liquid column. The electrolyte may be such as to cause electroplating of the surface or such as to cause etching thereof. A jet of very fine diameter may be used. Aqueous or non-aqueous electrolytes may be used. Specified electrolytes are aqueous solutions of sodium nitrate, sodium chloride, potassium nitrate, sodium potassium sulphate or nitric acid. The workpiece may be of germanium. As shown, a workpiece 10 is positioned between opposing jets of electrolyte 19 and 20 issuing from nozzles 21 and 22, having apertures of extremely small diameter. Electric current is supplied to the jets and to the workpiece by means not shown. Suction nozzles 35 and 36 are positioned close to each side edge of the workpiece 10 for producing an area of reduced pressure in the region of the periphery of the areas of impingement of jets 19 and 20 upon the workpiece. The low-pressure area causes a flow of air in a direction generally parallel to the jets and then across the faces of the workpiece 10 carrying a smooth thin flow of electrolyte across the faces of the workpiece and into nozzles 35 and 36. Electromagnetic waves may be transmitted during etching through that surface portion of the semi-conductor body which is being etched and the waves may be used for measuring the remaining thickness of the body at the part being etched, in the manner disclosed in Specification 817,953. Specifications 814,364 and 824,484 also are referred to.
GB18921/56A 1955-06-23 1956-06-19 Improvements in and relating to methods and apparatus for jet electrolytic etching orplating Expired GB834821A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US51745355A 1955-06-23 1955-06-23
US55969556A 1956-01-17 1956-01-17
US637972A US2937124A (en) 1955-06-23 1957-02-04 Method of fabricating semiconductive devices and the like

Publications (1)

Publication Number Publication Date
GB834821A true GB834821A (en) 1960-05-11

Family

ID=27414665

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18921/56A Expired GB834821A (en) 1955-06-23 1956-06-19 Improvements in and relating to methods and apparatus for jet electrolytic etching orplating

Country Status (6)

Country Link
US (1) US2937124A (en)
BE (1) BE564480A (en)
DE (1) DE1072045B (en)
FR (1) FR1153749A (en)
GB (1) GB834821A (en)
NL (2) NL208297A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2384865A1 (en) * 1977-02-04 1978-10-20 Schering Ag PARTIAL GALVANIZING PROCESS
US4289947A (en) * 1978-03-02 1981-09-15 Inoue-Japax Research Incorporated Fluid jetting system for electrical machining
RU2640213C1 (en) * 2016-12-30 2017-12-27 Федеральное государственное автономное научное учреждение "Центральный научно-исследовательский и опытно-конструкторский институт робототехники и технической кибернетики" (ЦНИИ РТК) Method ofelectrolytic plasma processing of metal products of complex profile and device for its realization

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL239732A (en) * 1958-06-18
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
US3058895A (en) * 1958-11-10 1962-10-16 Anocut Eng Co Electrolytic shaping
US3039514A (en) * 1959-01-16 1962-06-19 Philco Corp Fabrication of semiconductor devices
GB919158A (en) * 1959-02-26 1963-02-20 Mullard Ltd Improvements in methods of etching bodies
NL125378C (en) * 1959-11-27
US3172831A (en) * 1960-06-15 1965-03-09 Anocut Eng Co Grinding machine
US3384567A (en) * 1965-10-22 1968-05-21 Gen Electric Electrolyte guide member
US3409534A (en) * 1965-12-29 1968-11-05 Gen Electric Electrolytic material removal apparatus
US3630795A (en) * 1969-07-25 1971-12-28 North American Rockwell Process and system for etching metal films using galvanic action
US3793170A (en) * 1971-06-09 1974-02-19 Trw Inc Electrochemical machining method and apparatus
GB1445296A (en) * 1973-04-21 1976-08-11 Inoue Japax Res Electrical discharge machining
GB1464404A (en) * 1974-11-06 1977-02-16 Rolls Royce Electrical leakage control in electrochemical machine tools electrolyte drains systems
US4174261A (en) * 1976-07-16 1979-11-13 Pellegrino Peter P Apparatus for electroplating, deplating or etching
JPS56102590A (en) * 1979-08-09 1981-08-17 Koichi Shimamura Method and device for plating of microarea
US4344809A (en) * 1980-09-29 1982-08-17 Wensink Ben L Jet etch apparatus for decapsulation of molded devices
US4359360A (en) * 1981-12-10 1982-11-16 The United States Of America As Represented By The Secretary Of The Air Force Apparatus for selectively jet etching a plastic encapsulating an article
US6344106B1 (en) 2000-06-12 2002-02-05 International Business Machines Corporation Apparatus, and corresponding method, for chemically etching substrates
DE102005011298A1 (en) * 2005-03-04 2006-09-07 Gebr. Schmid Gmbh & Co. Apparatus and method for etching substrates
WO2013181629A1 (en) * 2012-06-01 2013-12-05 California Institute Of Technology Scanning drop sensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1114592A (en) * 1914-02-26 1914-10-20 Clinton C De Witt Hydropneumatic window-cleaning apparatus.
US1654727A (en) * 1925-07-13 1928-01-03 Green Edward William Apparatus for removing normally viscous liquid from surfaces
US1814866A (en) * 1926-09-30 1931-07-14 American Laundry Machinery Co Carpet cleaning machine
DE565765C (en) * 1929-07-24 1932-12-08 Vladimir Gusseff Method and device for the electrolytic processing of metals
US1982345A (en) * 1930-06-13 1934-11-27 James B Kirby Window washer
US2523018A (en) * 1946-12-12 1950-09-19 Paper Patents Co Method of cylinder etching and machine therefor
US2568803A (en) * 1949-06-09 1951-09-25 Guenst William Etching machine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2384865A1 (en) * 1977-02-04 1978-10-20 Schering Ag PARTIAL GALVANIZING PROCESS
US4289947A (en) * 1978-03-02 1981-09-15 Inoue-Japax Research Incorporated Fluid jetting system for electrical machining
RU2640213C1 (en) * 2016-12-30 2017-12-27 Федеральное государственное автономное научное учреждение "Центральный научно-исследовательский и опытно-конструкторский институт робототехники и технической кибернетики" (ЦНИИ РТК) Method ofelectrolytic plasma processing of metal products of complex profile and device for its realization

Also Published As

Publication number Publication date
NL208297A (en)
DE1072045B (en) 1959-12-24
US2937124A (en) 1960-05-17
FR1153749A (en) 1958-03-20
NL104994C (en)
BE564480A (en)

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