JPH0586654B2 - - Google Patents
Info
- Publication number
- JPH0586654B2 JPH0586654B2 JP59060617A JP6061784A JPH0586654B2 JP H0586654 B2 JPH0586654 B2 JP H0586654B2 JP 59060617 A JP59060617 A JP 59060617A JP 6061784 A JP6061784 A JP 6061784A JP H0586654 B2 JPH0586654 B2 JP H0586654B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- gas
- processed
- outer periphery
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 22
- 239000011261 inert gas Substances 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 20
- 238000005530 etching Methods 0.000 description 15
- 239000012495 reaction gas Substances 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、プラズマ処理装置に係り、特に減圧
下でプラズマにより試料をエツチング処理するの
に好適なプラズマ処理装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a plasma processing apparatus, and particularly to a plasma processing apparatus suitable for etching a sample with plasma under reduced pressure.
反応ガスに高周波電圧を印加し減圧下で放電さ
せつつ試料に所定の処理を施こすプラズマ処理装
置の一つに試料であるウエハを所定のパターンに
エツチングするドライエツチング装置がある。こ
の装置ではウエハの均一なエツチングを行うこと
が生産効率向上のため重要である。ウエハの均一
な処理には種々の因子が影響するがガスの流れ、
濃度の均一性も重要な因子である。以下、従来の
ドライエツチング装置を例にとり、第１図により
説明する。
One type of plasma processing apparatus that performs predetermined processing on a sample while applying a high frequency voltage to a reaction gas and discharging it under reduced pressure is a dry etching apparatus that etches a wafer as a sample into a predetermined pattern. In this apparatus, it is important to perform uniform etching of the wafer in order to improve production efficiency. Various factors affect uniform processing of wafers, including gas flow,
Concentration uniformity is also an important factor. Hereinafter, a conventional dry etching apparatus will be explained using FIG. 1 as an example.
第１図において、真空容器１１内に平行に対向
する２個の電極２０，３０を有し上部の電極２０
の下面から反応ガス２１を導入し、下部の電極３
０（一般に下部の電極に高周波電圧を印加する。）
上表面にウエハが設置されるように構成される。
上部の電極２０から導入されたガス２１は下部電
極３０上を半径方向へ流れ、下部電極３０外周側
面と真空容器１１の側壁との間隙４１を通つて排
気される。 In FIG. 1, there are two electrodes 20 and 30 facing each other in parallel in a vacuum container 11, and an upper electrode 20
The reaction gas 21 is introduced from the lower surface of the lower electrode 3.
0 (Generally, a high frequency voltage is applied to the lower electrode.)
A wafer is configured to be placed on the upper surface.
Gas 21 introduced from the upper electrode 20 flows in the radial direction on the lower electrode 30 and is exhausted through the gap 41 between the outer peripheral side surface of the lower electrode 30 and the side wall of the vacuum vessel 11 .
第２図は、このようなドライエツチング装置を
用いてAl膜のエツチングを行つた場合の結果に
ついて示したものである。第２図より明らかなよ
うにウエハの被処理面中心部でエツチング速度が
低く、ウエハの被処理面外周部でエツチング速度
が高い傾向を示している。これは、ウエハの被処
理面外周部を境に、つまり、被エツチング物が反
応ガス下に存在するか否かによつて反応ガスのラ
ジカル濃度が第３図に示すように変化し、ウエハ
の被処理面外周部ではガス拡散により化学反応が
活発となりエツチングが進行し、このことが第２
図に示したような不均一なエツチング速度を持つ
一因と考えられる。 FIG. 2 shows the results of etching an Al film using such a dry etching apparatus. As is clear from FIG. 2, the etching rate tends to be low at the center of the surface to be processed of the wafer, and the etching rate tends to be high at the outer periphery of the surface to be processed of the wafer. This is because the radical concentration of the reaction gas changes as shown in Figure 3, depending on whether or not the object to be etched exists under the reaction gas, depending on the outer periphery of the surface of the wafer to be processed. At the outer periphery of the surface to be processed, chemical reactions become active due to gas diffusion, and etching progresses.
This is thought to be one of the reasons for the non-uniform etching rate as shown in the figure.
このようなドライエツチング装置の欠点はウエ
ハ内でのエツチング速度の不均一さにより、ウエ
ハの被処理面中心部のエツチングが完了となる時
点においてウエハの被処理面外周部ではオーバー
エツチング状態となり、パターンの寸法精度が低
下し、そのため製品の歩留が低下するということ
にある。なお、この種の装置は、例えば、特開昭
55−82438号公報、特開昭56−43725号公報、特開
昭56−100419号公報、特開昭57−114231号公報等
に開示されている。 The disadvantage of such dry etching equipment is that the etching speed within the wafer is non-uniform, so that by the time the etching of the center of the wafer's surface to be processed is completed, the outer periphery of the surface of the wafer to be processed is over-etched, causing the pattern to become over-etched. The problem is that the dimensional accuracy of the product decreases, resulting in a decrease in product yield. Note that this type of device, for example, is
It is disclosed in JP-A-55-82438, JP-A-56-43725, JP-A-56-100419, JP-A-57-114231, etc.
本発明の目的は、試料の被処理面上へ供給する
反応ガスの濃度を局部的に制御することにより試
料の均一処理を行い製品の歩留を向上できるプラ
ズマ処理装置を提供することにある。
An object of the present invention is to provide a plasma processing apparatus that can uniformly process a sample and improve product yield by locally controlling the concentration of a reactive gas supplied onto the surface of the sample to be processed.
本発明は、処理中に試料の被処理面外周部に不
活性ガスを供給可能に不活性ガス供給系を設けた
ことを特徴とするもので、試料の被処理面外周部
での反応ガス濃度を適度に制御することにより試
料内の処理の均一性を向上しようとするものであ
る。
The present invention is characterized in that an inert gas supply system is provided to be able to supply an inert gas to the outer periphery of the surface to be processed of the sample during processing, and the reaction gas concentration at the outer periphery of the surface to be processed of the sample is The aim is to improve the uniformity of processing within a sample by controlling the process appropriately.
本発明の一実施例を第４図、第５図により説明
する。なお、第４図で第１図と同一部品等は同一
符号で示した。
An embodiment of the present invention will be described with reference to FIGS. 4 and 5. In FIG. 4, the same parts as in FIG. 1 are indicated by the same symbols.
第４図で、従来と同様にして下部電極３０への
試料であるウエハ６０の設置ならびに真空容器１
１内の所定圧力までの減圧排気が完了した後、反
応ガス供給ボンベ２１より反応ガスが流量制御装
置２２により流量制御されガス流通路２３を通
り、ガス供給孔２４から供給される。一方、不活
性ガスは不活性ガス供給系を構成するガス供給ボ
ンベ２５より同じく流量制御装置２６により流量
制御され、同じくガス流通路２７を通り、下部電
極３０のウエハ設置外周部の同じくガス供給孔２
８より供給される。このように供給された反応ガ
スは上部電極２０と下部電極３０間で放電により
プラズマ化され、ウエハ６０の被処理面は所定の
パターンにエツチングされる。その後、このガス
は隙間４１を通り排気ノズル１０を経て排気装置
（図示せず。）により排気される。なお、真空容器
１１内は排気装置により最適な圧力に調整される
構成となつている。 In FIG. 4, a wafer 60, which is a sample, is placed on the lower electrode 30 and a vacuum container 1 is placed in the same manner as before.
After completion of evacuation to a predetermined pressure in the reaction gas supply cylinder 21 , the flow rate of the reaction gas from the reaction gas supply cylinder 21 is controlled by the flow rate control device 22 , passes through the gas flow path 23 , and is supplied from the gas supply hole 24 . On the other hand, the flow rate of the inert gas is controlled by the flow rate controller 26 from the gas supply cylinder 25 constituting the inert gas supply system, passes through the gas flow path 27, and passes through the gas supply hole on the outer periphery of the wafer installation of the lower electrode 30. 2
8. The reaction gas thus supplied is turned into plasma by discharge between the upper electrode 20 and the lower electrode 30, and the surface of the wafer 60 to be processed is etched into a predetermined pattern. Thereafter, this gas passes through the gap 41, passes through the exhaust nozzle 10, and is exhausted by an exhaust device (not shown). Note that the pressure inside the vacuum container 11 is adjusted to an optimal pressure by an exhaust device.
本実施例のようなプラズマ処理装置では反応ガ
スと不活性ガスの流量を制御して供給することが
可能であるので次に示す作用を行うことができ
る。すなわち、第２図に示したような不均一なエ
ツチング速度分布を持つような場合には、下部電
極３０に設けたガス供給孔２８より不活性ガスを
真空容器１１内へ供給しウエハ６０の被処理面外
周部付近の反応ガスのラジカル濃度を希釈してウ
エハ６０の被処理面外周部での化学反応を抑制
し、エツチング速度を抑制する。したがつて、ウ
エハ６０内のエツチング速度の均一性は反応ガス
と不活性ガスの供給量を適度にバランスさせるこ
とにより、従来に較べ向上することができる。第
６図は他の実施例を説明するもので、下部電極３
０に設けた不活性ガス供給口２８より供給される
不活性ガスをウエハ６０の被処理面外周部へ効率
良く誘導するためのガス誘導板７０（絶縁物）を
設けている。このようなガス誘導板を設けた場合
には、不活性ガスが誘導板に沿つてウエハの被処
理面外周部に重点的に供給されるので、ウエハの
被処理面外周部でのエツチング抑制効果は更に向
上する。 In the plasma processing apparatus as in this embodiment, the flow rates of the reactive gas and the inert gas can be controlled and supplied, so that the following effects can be achieved. That is, in the case where the etching rate distribution is non-uniform as shown in FIG. The radical concentration of the reactive gas near the outer periphery of the processing surface is diluted to suppress chemical reactions at the outer periphery of the processing surface of the wafer 60, thereby suppressing the etching rate. Therefore, the uniformity of the etching rate within the wafer 60 can be improved compared to the conventional method by appropriately balancing the supply amounts of the reactive gas and the inert gas. FIG. 6 is for explaining another embodiment, in which the lower electrode 3
A gas guide plate 70 (insulator) is provided to efficiently guide the inert gas supplied from the inert gas supply port 28 provided at the wafer 60 to the outer periphery of the surface to be processed of the wafer 60. When such a gas guide plate is provided, the inert gas is supplied along the guide plate to the outer periphery of the wafer to be processed, thereby suppressing etching at the outer periphery of the wafer to be processed. will further improve.
本発明は以上説明したように、処理中に試料の
被処理面外周部に不活性ガスを供給可能に不活性
ガス供給系を設けたことで、試料の被処理面外周
部での反応ガス濃度を適度に制御することにより
試料内の処理の均一性を向上でき、製品の歩留を
向上できるという効果がある。
As explained above, the present invention provides an inert gas supply system capable of supplying an inert gas to the outer periphery of the surface to be processed of the sample during processing, thereby increasing the concentration of reactive gas at the outer periphery of the surface to be processed of the sample. By appropriately controlling the process, the uniformity of processing within the sample can be improved, and the yield of products can be improved.
第１図、第２図、第３図は従来のドライエツチ
ング装置を説明するもので、第１図はドライエツ
チング装置の縦断面図、第２図はエツチング速度
分布図、第３図はラジカル濃度分布図、第４図は
本発明によるプラズマ処理装置の一実施例を示す
縦断面図、第５図は第４図のプラズマ処理装置に
よるエツチング速度分布図、第６図は本発明によ
るプラズマ処理装置の他の実施例を示す下部電極
近傍の拡大縦断面図である。
１０……排気ノズル、１１……真空容器、２０
……上部電極、２１……反応ガス供給ボンベ、２
２……流量制御装置、２３……ガス流通路、２４
……ガス供給口、２５……不活性ガス供給ボン
ベ、２６……流量制御装置、２７……ガス流通
路、２８……ガス供給口、３０……下部電極、４
１……隙間、５０……高周波電源、６０……ウエ
ハ、７０……ガス誘導板。
Figures 1, 2, and 3 explain conventional dry etching equipment. Figure 1 is a longitudinal cross-sectional view of the dry etching equipment, Figure 2 is an etching rate distribution diagram, and Figure 3 is a radical concentration diagram. FIG. 4 is a vertical cross-sectional view showing an embodiment of the plasma processing apparatus according to the present invention, FIG. 5 is an etching rate distribution diagram using the plasma processing apparatus shown in FIG. 4, and FIG. FIG. 7 is an enlarged vertical cross-sectional view of the vicinity of the lower electrode showing another example. 10...Exhaust nozzle, 11...Vacuum container, 20
... Upper electrode, 21 ... Reaction gas supply cylinder, 2
2...Flow rate control device, 23...Gas flow path, 24
... Gas supply port, 25 ... Inert gas supply cylinder, 26 ... Flow rate control device, 27 ... Gas flow path, 28 ... Gas supply port, 30 ... Lower electrode, 4
1...Gap, 50...High frequency power supply, 60...Wafer, 70...Gas guide plate.
Claims (1)
により試料を処理する装置において、処理中に前
記試料の被処理面外周部に不活性ガスを供給可能
に不活性ガス供給系を設けたことを特徴とするプ
ラズマ処理装置。1. An apparatus for converting a reactive gas into plasma under reduced pressure and treating a sample with the plasma, characterized in that an inert gas supply system is provided to supply an inert gas to the outer periphery of the surface to be processed of the sample during processing. plasma processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6061784A JPS60206027A (en) | 1984-03-30 | 1984-03-30 | Plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6061784A JPS60206027A (en) | 1984-03-30 | 1984-03-30 | Plasma processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60206027A JPS60206027A (en) | 1985-10-17 |
| JPH0586654B2 true JPH0586654B2 (en) | 1993-12-13 |
Family
ID=13147414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6061784A Granted JPS60206027A (en) | 1984-03-30 | 1984-03-30 | Plasma processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60206027A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729631Y2 (en) * | 1986-03-27 | 1995-07-05 | 富士通株式会社 | Dry etching equipment |
| JP2894658B2 (en) * | 1992-01-17 | 1999-05-24 | 株式会社東芝 | Dry etching method and apparatus |
| JP6444794B2 (en) * | 2015-03-30 | 2018-12-26 | Ｓｐｐテクノロジーズ株式会社 | Semiconductor device manufacturing method and plasma etching apparatus used for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123173A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Sputter etching method |
| JPS57102022A (en) * | 1980-12-17 | 1982-06-24 | Nec Corp | Reactive sputter etching equipment |
| JPS5890731A (en) * | 1981-11-25 | 1983-05-30 | Sony Corp | Plasma processing apparatus |
-
1984
- 1984-03-30 JP JP6061784A patent/JPS60206027A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123173A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Sputter etching method |
| JPS57102022A (en) * | 1980-12-17 | 1982-06-24 | Nec Corp | Reactive sputter etching equipment |
| JPS5890731A (en) * | 1981-11-25 | 1983-05-30 | Sony Corp | Plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60206027A (en) | 1985-10-17 |
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