JPH0729631Y2 - Dry etching equipment - Google Patents
Dry etching equipmentInfo
- Publication number
- JPH0729631Y2 JPH0729631Y2 JP1986045623U JP4562386U JPH0729631Y2 JP H0729631 Y2 JPH0729631 Y2 JP H0729631Y2 JP 1986045623 U JP1986045623 U JP 1986045623U JP 4562386 U JP4562386 U JP 4562386U JP H0729631 Y2 JPH0729631 Y2 JP H0729631Y2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- dry etching
- reaction gas
- sample mounting
- mounting portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
Description
【考案の詳細な説明】 〔概要〕 反応ガス供給を、ドライエッチング装置の下部電極の周
辺に設けた噴出口により行なうドライエッチング装置。Detailed Description of the Invention [Outline] A dry etching apparatus for supplying a reaction gas by means of a jet port provided around a lower electrode of the dry etching apparatus.
〔産業上の利用分野〕 半導体装置の製造におけるウェーハプロセス工程で使用
するドライエッチング装置の改良に関するものである。[Field of Industrial Application] The present invention relates to an improvement of a dry etching apparatus used in a wafer process step in manufacturing a semiconductor device.
ドライエッチング装置は半導体装置製造のウェーハプロ
セス工程で広く使用されており、良好なエッチングを行
なうための種々の改善がなされているが、特に均一なエ
ッチングを行なうための考案が要求されている。The dry etching apparatus is widely used in the wafer process step of manufacturing a semiconductor device, and various improvements have been made to perform good etching. However, a device for performing uniform etching is required.
従来のドライエッチング装置における反応ガスの供給
は、第３図に示すように上部電極２の下部電極３との対
向面或いは上部電極２のチャンバー１の貫通部分近辺の
側面から噴出させることにより行なっている。The reaction gas is supplied in the conventional dry etching apparatus by jetting it from the surface of the upper electrode 2 facing the lower electrode 3 or the side surface of the upper electrode 2 near the penetrating portion of the chamber 1 as shown in FIG. There is.
以上説明の従来のドライエッチング装置で問題となるの
は、このような試料から遠く離れた部所からのガス供給
方法では、試料の表面部分におけるガスの分布が不均一
になることである。A problem with the conventional dry etching apparatus described above is that in such a gas supply method from a portion far from the sample, the gas distribution on the surface portion of the sample becomes uneven.
本考案はこのような状況に対して試料の表面部分のガス
分布を均一にするガス供給手段の提供を目的としたもの
である。The present invention aims to provide a gas supply means for making the gas distribution on the surface of the sample uniform in such a situation.
上記問題点は、試料を載置する試料載置部を有する電極
の該試料載置部近傍に、該試料載置部を取り囲むよう
に、塩素および酸素を含有した反応ガス供給の噴出口
を、互いに等間隔でありかつ円形をなすように複数配設
し、 該試料載置部の裏面方向へ排気を行うガス排気口を有し
て、かつ該試料載置部表面に対して略垂直上方に向けて
前記反応ガスが噴出して、該試料表面のクロム含有膜を
エッチング除去することを特徴とするドライエッチング
装置により解決される。The above-mentioned problem is that in the vicinity of the sample mounting portion of the electrode having the sample mounting portion for mounting the sample, so as to surround the sample mounting portion, the ejection port of the reaction gas supply containing chlorine and oxygen, Plural pieces are arranged at equal intervals and in a circular shape, have a gas exhaust port for exhausting gas toward the rear surface of the sample mounting portion, and are substantially vertically above the surface of the sample mounting portion. This is solved by a dry etching apparatus characterized in that the reaction gas is ejected toward the surface to etch away the chromium-containing film on the surface of the sample.
即ち本考案においては、下部電極の試料に非常に近い部
分に均等に配置された噴出口から反応ガスが供給される
ので、反応ガスが拡散する前に直接に試料と反応するこ
とが可能となり、エッチングの均一性が向上する。That is, in the present invention, since the reaction gas is supplied from the jet ports evenly arranged in a portion very close to the sample of the lower electrode, it becomes possible to directly react with the sample before the reaction gas diffuses, The etching uniformity is improved.
以下第１図，第２図について本考案の一実施例を説明す
る。An embodiment of the present invention will be described below with reference to FIGS.
本実施例は、半導体装置製造におけるフォト工程で使用
するクロームマスクのエッチングの場合のものである。This embodiment is for etching a chrome mask used in a photo process in manufacturing a semiconductor device.
本実施例においては、試料は下部電極３の載置部に置か
れ、ガス噴出口５は載置部近傍の下部電極３の周辺部に
等間隔に穿孔されており、四塩化炭素と酸素の混合した
反応ガスが均等に配分されて試料４の周囲に供給され
る。In this example, the sample is placed on the mounting portion of the lower electrode 3, and the gas ejection ports 5 are perforated in the peripheral portion of the lower electrode 3 in the vicinity of the mounting portion at equal intervals. The mixed reaction gas is evenly distributed and supplied around the sample 4.
第１図の上部電極２と下部電極３との間隔は、30〜150m
mで、チャンバー１の室内圧力は0.2〜0.7Torrに保たれ
ている。The distance between the upper electrode 2 and the lower electrode 3 in FIG. 1 is 30 to 150 m.
At m, the chamber pressure in chamber 1 is maintained at 0.2-0.7 Torr.
供給される反応ガスの流量は、 四塩化炭素（CCl4）が10〜50SCCM 酸素が60〜100SCCMである。The flow rate of the reaction gas supplied is 10 to 50 SCCM for carbon tetrachloride (CCl 4 ) and 60 to 100 SCCM for oxygen.
SCCMとは一分間当たりの流量を標準状態で表した単位で
ある。SCCM is a unit that represents the flow rate per minute in a standard state.
高周波発振器の出力は50〜400Wである。The output of the high frequency oscillator is 50 ~ 400W.
このようにしてガラス基板上のクローム膜上にフォトレ
ジスト膜パターンを形成した試料４のクローム膜には、
均等に供給された混合ガスと反応して均一なエッチング
が行われた。In the chrome film of Sample 4 in which the photoresist film pattern is formed on the chrome film on the glass substrate in this way,
Uniform etching was performed by reacting with the mixed gas uniformly supplied.
以上説明したように本考案によれば反応ガスのガス噴出
口を設ける部分を変更する極めて簡単な構造の変更によ
り、均一なエッチングを行なうことができるので、その
実用的効果は大きい。As described above, according to the present invention, uniform etching can be performed by changing an extremely simple structure for changing the portion where the gas jet port of the reaction gas is provided, so that the practical effect is great.
第１図は本考案による一実施例を示す側断面図、 第２図は本考案による一実施例の下部電極の平面図、 第３図は従来技術の装置を示す側断面図 である。 図において、 １はチャンバー、２は上部電極、３は下部電極、４は試
料、５はガス噴出口、６は高周波発振器、７は真空計、 を示す。1 is a side sectional view showing an embodiment according to the present invention, FIG. 2 is a plan view of a lower electrode according to an embodiment of the present invention, and FIG. 3 is a side sectional view showing a conventional device. In the figure, 1 is a chamber, 2 is an upper electrode, 3 is a lower electrode, 4 is a sample, 5 is a gas ejection port, 6 is a high frequency oscillator, and 7 is a vacuum gauge.
Claims (1)
該試料載置部近傍に、該試料載置部を取り囲むように、
塩素および酸素を含有した反応ガス供給の噴出口を、互
いに等間隔でありかつ円形をなすように複数配設し、 該試料載置部の裏面方向へ排気を行うガス排気口を有し
て、かつ該試料載置部表面に対して略垂直上方に向けて
前記反応ガスが噴出して、該試料表面のクロム含有膜を
エッチング除去することを特徴とするドライエッチング
装置。1. An electrode having a sample mounting part for mounting a sample, in the vicinity of the sample mounting part, so as to surround the sample mounting part,
A plurality of ejection ports for supplying a reaction gas containing chlorine and oxygen are arranged at equal intervals and in a circular shape, and have a gas exhaust port for exhausting toward the back surface of the sample mounting portion, Further, the dry etching apparatus is characterized in that the reaction gas is ejected substantially vertically upward with respect to the surface of the sample mounting portion to remove the chromium-containing film on the surface of the sample by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986045623U JPH0729631Y2 (en) | 1986-03-27 | 1986-03-27 | Dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986045623U JPH0729631Y2 (en) | 1986-03-27 | 1986-03-27 | Dry etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62157138U JPS62157138U (en) | 1987-10-06 |
| JPH0729631Y2 true JPH0729631Y2 (en) | 1995-07-05 |
Family
ID=30864528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986045623U Expired - Lifetime JPH0729631Y2 (en) | 1986-03-27 | 1986-03-27 | Dry etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0729631Y2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60206027A (en) * | 1984-03-30 | 1985-10-17 | Hitachi Ltd | Plasma processing apparatus |
| JPS6127334U (en) * | 1984-07-24 | 1986-02-18 | 日本電気株式会社 | dry etching equipment |
-
1986
- 1986-03-27 JP JP1986045623U patent/JPH0729631Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62157138U (en) | 1987-10-06 |
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