GB774270A - Method of producing bodies of metals or matalloids - Google Patents
Method of producing bodies of metals or matalloidsInfo
- Publication number
- GB774270A GB774270A GB35016/53A GB3501653A GB774270A GB 774270 A GB774270 A GB 774270A GB 35016/53 A GB35016/53 A GB 35016/53A GB 3501653 A GB3501653 A GB 3501653A GB 774270 A GB774270 A GB 774270A
- Authority
- GB
- United Kingdom
- Prior art keywords
- molten
- rod
- silicon
- germanium
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 150000002739 metals Chemical class 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 5
- 239000011159 matrix material Substances 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 239000001257 hydrogen Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 229910052752 metalloid Inorganic materials 0.000 abstract 2
- 150000002738 metalloids Chemical class 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- -1 boron Chemical class 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000010891 electric arc Methods 0.000 abstract 1
- 230000008014 freezing Effects 0.000 abstract 1
- 238000007710 freezing Methods 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 238000007670 refining Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 230000002459 sustained effect Effects 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US333693XA | 1952-12-17 | 1952-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB774270A true GB774270A (en) | 1957-05-08 |
Family
ID=21870028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB35016/53A Expired GB774270A (en) | 1952-12-17 | 1953-12-16 | Method of producing bodies of metals or matalloids |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE525102A (enrdf_load_stackoverflow) |
| CH (1) | CH333693A (enrdf_load_stackoverflow) |
| DE (1) | DE1014332B (enrdf_load_stackoverflow) |
| FR (1) | FR1087946A (enrdf_load_stackoverflow) |
| GB (1) | GB774270A (enrdf_load_stackoverflow) |
| NL (1) | NL89230C (enrdf_load_stackoverflow) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3053639A (en) * | 1959-02-11 | 1962-09-11 | Union Carbide Corp | Method and apparatus for growing crystals |
| US3086850A (en) * | 1959-06-17 | 1963-04-23 | Itt | Method and means for growing and treating crystals |
| US3093456A (en) * | 1958-09-02 | 1963-06-11 | Texas Instruments Inc | Method for recovery and reuse of quartz containers |
| US3115469A (en) * | 1959-06-22 | 1963-12-24 | Monsanto Chemicals | Production of single crystals of ferrites |
| US3156533A (en) * | 1960-07-26 | 1964-11-10 | Imber Oscar | Crystal growth apparatus |
| US3185551A (en) * | 1959-06-05 | 1965-05-25 | Ind De Pierres Scient Hrand Dj | Process for manufacturing a tubular body made of synthetic material, and installation for carrying out this process |
| US3191924A (en) * | 1959-12-31 | 1965-06-29 | Siemens Ag | Device for mounting semiconductor rods in apparatus for crucible-free zone melting |
| US3205046A (en) * | 1959-06-05 | 1965-09-07 | Ind De Pierres Scient Hrand Dj | Rotary arbor for making synthetic stone |
| US3224844A (en) * | 1961-03-01 | 1965-12-21 | Philips Corp | Zone-melting method for metal compounds |
| US3245761A (en) * | 1962-10-11 | 1966-04-12 | Norton Co | Apparatus for making magnesium oxide crystals |
| US3314769A (en) * | 1963-05-08 | 1967-04-18 | Union Carbide Corp | Arc process and apparatus for growing crystals |
| US4379733A (en) * | 1981-10-02 | 1983-04-12 | Hughes Aircraft Company | Bicameral mode crystal growth apparatus and process |
| CN115198356A (zh) * | 2022-07-15 | 2022-10-18 | 郑州大学 | 一种特定取向的大规格金属单晶及其制备方法 |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1056840B (de) | 1953-02-14 | 1959-05-06 | Siemens Ag | Verfahren zum Verteilen von Fremdstoffkomponenten in Halbleiterstaeben durch ein tiegelloses Zonenschmelzverfahren |
| DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
| DE1062431B (de) | 1953-02-14 | 1959-07-30 | Siemens Ag | Verfahren und Vorrichtung zum Umschmelzen von langgestreckten Koerpern durch Zonenschmelzen |
| DE971413C (de) * | 1953-10-02 | 1959-01-22 | Siemens Ag | Vorrichtung zum tiegellosen Zonenschmelzen |
| DE1151245B (de) * | 1953-11-03 | 1963-07-11 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Werkstoffen in Form eines langgestreckten Koerpers |
| DE1188042B (de) | 1954-01-29 | 1965-03-04 | Siemens Ag | Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers |
| DE1175447B (de) | 1954-01-29 | 1964-08-06 | Licentia Gmbh | Verfahren zur Herstellung von Halbleiter-kristallen durch tiegelfreies Zonenschmelzen |
| NL122356C (enrdf_load_stackoverflow) * | 1954-05-18 | 1900-01-01 | ||
| US2964396A (en) * | 1954-05-24 | 1960-12-13 | Siemens Ag | Producing semiconductor substances of highest purity |
| DE1017795B (de) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen |
| DE1253235B (de) * | 1954-05-25 | 1967-11-02 | Siemens Ag | Verfahren zum Herstellen stabfoermiger Halbleiterkristalle |
| DE1221611B (de) | 1954-06-24 | 1966-07-28 | Siemens Ag | Verfahren und Vorrichtung zur Herstellung von kuenstlichen Edelsteinen oder Halbedelsteinen oder von zur spanabhebenden Bearbeitung geeigneten Hartstoffen |
| DE1179382B (de) * | 1954-06-30 | 1964-10-08 | Siemens Ag | Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls fuer die Fertigung von elektrischen Halbleiterbauelementen, wie Richtleiter, Transistoren usw. |
| DE1201073B (de) * | 1954-07-30 | 1965-09-16 | Siemens Ag | Verfahren zum Herstellen einer halbleitenden Legierung |
| NL105554C (enrdf_load_stackoverflow) | 1955-01-13 | |||
| NL203438A (enrdf_load_stackoverflow) * | 1955-01-14 | |||
| FR109723A (enrdf_load_stackoverflow) * | 1955-01-14 | |||
| DE1196046B (de) * | 1955-03-28 | 1965-07-01 | Siemens Ag | Verfahren zum Herstellen eines hochreinen, kristallinen Stabes aus einem leitenden oder halbleitenden Element |
| DE1141255B (de) * | 1958-03-05 | 1962-12-20 | Siemens Ag | Verfahren zum Herstellen hochgereinigter einkristalliner Halbleiterstaebe |
| US2835614A (en) * | 1955-11-30 | 1958-05-20 | Raulaud Corp | Method of manufacturing crystalline material |
| DE1063870B (de) * | 1956-06-28 | 1959-08-20 | Gustav Weissenberg | Verfahren und Vorrichtung zum tiegellosen Zuechten von Einkristallen aus hochreinem Silicium oder Germanium |
| DE1181668B (de) * | 1956-10-17 | 1964-11-19 | Siemens Ag | Verfahren zum Herstellen von hochreinen, stabfoermigen Halbleiterkristallen durch Abscheiden des Halbleiters aus einer gasfoermigen Verbindung des Halbleiters durch eineelektrische Gasentladung |
| DE1136308B (de) * | 1956-10-17 | 1962-09-13 | Siemens Ag | Verfahren zum Herstellen von Kristallstaeben aus hochreinen halbleitenden Stoffen |
| BE562704A (enrdf_load_stackoverflow) * | 1956-11-28 | |||
| DE1207922B (de) * | 1957-04-30 | 1965-12-30 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium |
| DE1169683B (de) * | 1957-05-31 | 1964-05-06 | Siemens Ag | Verfahren zum tiegellosen Zonenschmelzen eines Halbleiterstabes |
| DE1092576B (de) * | 1957-11-15 | 1960-11-10 | Siemens Ag | Stromzufuehrung fuer die bewegliche Heizspule einer tiegelfreien Zonenziehvorrichtung im Innern eines Gefaesses |
| DE1076623B (de) * | 1957-11-15 | 1960-03-03 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenziehen von stabfoermigem Halbleitermaterial |
| NL234451A (enrdf_load_stackoverflow) * | 1957-12-27 | |||
| NL235481A (enrdf_load_stackoverflow) * | 1958-02-19 | |||
| NL237618A (enrdf_load_stackoverflow) * | 1958-04-03 | |||
| BE581195A (enrdf_load_stackoverflow) * | 1958-07-30 | |||
| DE1216040B (de) * | 1958-09-12 | 1966-05-05 | Eternit Sa | Muffensteckverbindung fuer glatte Einsteckrohre |
| DE1164681B (de) | 1958-12-24 | 1964-03-05 | Siemens Ag | Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen |
| NL112210C (enrdf_load_stackoverflow) * | 1959-04-30 | |||
| DE1128412B (de) * | 1959-12-17 | 1962-04-26 | Metallgesellschaft Ag | Verfahren zur Herstellung von Reinstsilicium durch thermische Zersetzung von gasfoermigen Siliciumverbindungen |
| NL258961A (enrdf_load_stackoverflow) * | 1959-12-23 | |||
| NL262164A (enrdf_load_stackoverflow) * | 1960-03-11 | |||
| DE1216257B (de) * | 1960-08-18 | 1966-05-12 | Kempten Elektroschmelz Gmbh | Verfahren zur Herstellung von Einkristallen |
| DE1163559B (de) * | 1960-08-20 | 1964-02-20 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen von einkristallinen Staeben, insbesondere fuer Halbleiteranordnungen, durch tiegelfreies Zonenschmelzen |
| US3232745A (en) * | 1960-12-05 | 1966-02-01 | Siemens Ag | Producing rod-shaped semiconductor crystals |
| FR1317646A (enrdf_load_stackoverflow) * | 1961-03-14 | 1963-05-08 | ||
| FR1315934A (fr) * | 1961-12-15 | 1963-01-25 | Radiotechnique | Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs |
| DE1182207B (de) * | 1962-07-20 | 1964-11-26 | Siemens Ag | Verfahren zum Herstellen eines versetzungsarmen Halbleitereinkristalls durch tiegelfreies Zonenschmelzen |
| DE1284942B (de) * | 1964-06-30 | 1968-12-12 | Halbleiterwerk Frankfurt Oder | Vorrichtung zur thermischen Behandlung von Kristallen und Schmelzen, insbesondere aus Halbleitermaterial |
| CN113337725A (zh) * | 2021-06-29 | 2021-09-03 | 红河学院 | 一种从冶炼渣中富集锗的方法 |
-
0
- BE BE525102D patent/BE525102A/xx unknown
- NL NL89230D patent/NL89230C/xx active
-
1953
- 1953-09-04 FR FR1087946D patent/FR1087946A/fr not_active Expired
- 1953-09-22 DE DEW12172A patent/DE1014332B/de active Pending
- 1953-12-16 GB GB35016/53A patent/GB774270A/en not_active Expired
- 1953-12-17 CH CH333693D patent/CH333693A/fr unknown
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3093456A (en) * | 1958-09-02 | 1963-06-11 | Texas Instruments Inc | Method for recovery and reuse of quartz containers |
| US3053639A (en) * | 1959-02-11 | 1962-09-11 | Union Carbide Corp | Method and apparatus for growing crystals |
| US3205046A (en) * | 1959-06-05 | 1965-09-07 | Ind De Pierres Scient Hrand Dj | Rotary arbor for making synthetic stone |
| US3185551A (en) * | 1959-06-05 | 1965-05-25 | Ind De Pierres Scient Hrand Dj | Process for manufacturing a tubular body made of synthetic material, and installation for carrying out this process |
| US3086850A (en) * | 1959-06-17 | 1963-04-23 | Itt | Method and means for growing and treating crystals |
| US3115469A (en) * | 1959-06-22 | 1963-12-24 | Monsanto Chemicals | Production of single crystals of ferrites |
| US3191924A (en) * | 1959-12-31 | 1965-06-29 | Siemens Ag | Device for mounting semiconductor rods in apparatus for crucible-free zone melting |
| US3156533A (en) * | 1960-07-26 | 1964-11-10 | Imber Oscar | Crystal growth apparatus |
| US3224844A (en) * | 1961-03-01 | 1965-12-21 | Philips Corp | Zone-melting method for metal compounds |
| US3245761A (en) * | 1962-10-11 | 1966-04-12 | Norton Co | Apparatus for making magnesium oxide crystals |
| US3314769A (en) * | 1963-05-08 | 1967-04-18 | Union Carbide Corp | Arc process and apparatus for growing crystals |
| US4379733A (en) * | 1981-10-02 | 1983-04-12 | Hughes Aircraft Company | Bicameral mode crystal growth apparatus and process |
| CN115198356A (zh) * | 2022-07-15 | 2022-10-18 | 郑州大学 | 一种特定取向的大规格金属单晶及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1014332B (de) | 1957-08-22 |
| NL89230C (enrdf_load_stackoverflow) | 1900-01-01 |
| CH333693A (fr) | 1958-10-31 |
| FR1087946A (fr) | 1955-03-01 |
| BE525102A (enrdf_load_stackoverflow) | 1900-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
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