GB710804A - Photoelectric devices employing semiconductive bodies - Google Patents

Photoelectric devices employing semiconductive bodies

Info

Publication number
GB710804A
GB710804A GB7320/52A GB732052A GB710804A GB 710804 A GB710804 A GB 710804A GB 7320/52 A GB7320/52 A GB 7320/52A GB 732052 A GB732052 A GB 732052A GB 710804 A GB710804 A GB 710804A
Authority
GB
United Kingdom
Prior art keywords
type
zones
zone
light
fall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7320/52A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB710804A publication Critical patent/GB710804A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/22—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
    • H01H47/24—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil having light-sensitive input
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

710,804. Photo-electric devices. WESTERN ELECTRIC CO., Inc. March 21, 1952, [March 21, 1951.] No. 7320/52. Class 37. A photo-electric device comprises a body of semiconductive material having two zones of one conductivity type separated by and contiguous with a zone of opposite conductivity type, the thickness of which zone in the direction providing separation is not greater than the diffusion length of charge carriers normally in the minority therein, means for impressing a biasing potential between the two zones of one conductivity and means for permitting light to fall on a face of the body to which all three zones extend. The intermediate zone may be of P-type material and of thickness not greater than a few lengths of a millimetre. The incident light may, as shown in Fig. 1, fall on the P-type zone i and on small contiguous portions of the N-type zones 10A, 10B. The N-type zones have electrodes or terminals 14A, 14B connected to a battery 12 through a load resistance 13. Alternatively, the light may fall on the P-type zone, on either of the N-type zones, or on the P-type zone and a portion of one of the N-type zones. The germanium may be replaced by silicon. A composite germanium crystal having the zones indicated in Fig. 1 may be produced by the method described in Specification 706,858, and the surface on which the light impinges preferably has a mirror finish completed by a metallic coating deposited electrolytically from antimony oxychloride. The effect of the biasing battery in relation to the increased conductivity the device in response to incident light is explained in the Specification.
GB7320/52A 1951-03-21 1952-03-21 Photoelectric devices employing semiconductive bodies Expired GB710804A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US300403XA 1951-03-21 1951-03-21

Publications (1)

Publication Number Publication Date
GB710804A true GB710804A (en) 1954-06-16

Family

ID=21852222

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7320/52A Expired GB710804A (en) 1951-03-21 1952-03-21 Photoelectric devices employing semiconductive bodies

Country Status (5)

Country Link
BE (1) BE508655A (en)
CH (1) CH300403A (en)
FR (1) FR1048527A (en)
GB (1) GB710804A (en)
NL (1) NL165648C (en)

Also Published As

Publication number Publication date
CH300403A (en) 1954-07-31
FR1048527A (en) 1953-12-22
NL165648C (en)
BE508655A (en)

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