FR2180507A1 - Sun battery - Google Patents

Sun battery

Info

Publication number
FR2180507A1
FR2180507A1 FR7213738A FR7213738A FR2180507A1 FR 2180507 A1 FR2180507 A1 FR 2180507A1 FR 7213738 A FR7213738 A FR 7213738A FR 7213738 A FR7213738 A FR 7213738A FR 2180507 A1 FR2180507 A1 FR 2180507A1
Authority
FR
France
Prior art keywords
zone
pref
collecting grid
doped zone
basic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7213738A
Other languages
French (fr)
Other versions
FR2180507B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR7213738A priority Critical patent/FR2180507A1/en
Priority to FR7215599A priority patent/FR2182652B2/fr
Priority to NL7305193.A priority patent/NL159238B/en
Priority to DE2318895A priority patent/DE2318895A1/en
Priority to GB1864373A priority patent/GB1387244A/en
Priority to JP48043760A priority patent/JPS5120273B2/ja
Publication of FR2180507A1 publication Critical patent/FR2180507A1/en
Priority to US513461A priority patent/US3928073A/en
Application granted granted Critical
Publication of FR2180507B1 publication Critical patent/FR2180507B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Sun battery consists of a semiconductor body (pref. Si) with a basic p-doped zone topped with a thin n-doped zone exposed to sunlight, with a metal electrode underneath the semiconductor body and a metallic collecting grid electrode on top of it. The n-doped zone is coated between the rods of the collecting grid with a transparent insulating layer (pref. SiO2) provided on its surface with an electroconductive film (pref. SnO2) which is not in contact with the collecting grid and forms a third electrode connected to its own energy source consisting of elementary barrier-layer photodiodes formed by alternating n- and p-doping of the basic p-zone through a window in the n-zone.
FR7213738A 1972-04-19 1972-04-19 Sun battery Granted FR2180507A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7213738A FR2180507A1 (en) 1972-04-19 1972-04-19 Sun battery
FR7215599A FR2182652B2 (en) 1972-04-19 1972-05-03
NL7305193.A NL159238B (en) 1972-04-19 1973-04-13 SOLAR CELL.
DE2318895A DE2318895A1 (en) 1972-04-19 1973-04-14 SOLAR BATTERY
GB1864373A GB1387244A (en) 1972-04-19 1973-04-18 Solar cells
JP48043760A JPS5120273B2 (en) 1972-04-19 1973-04-19
US513461A US3928073A (en) 1972-04-19 1974-10-09 Solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7213738A FR2180507A1 (en) 1972-04-19 1972-04-19 Sun battery

Publications (2)

Publication Number Publication Date
FR2180507A1 true FR2180507A1 (en) 1973-11-30
FR2180507B1 FR2180507B1 (en) 1978-03-03

Family

ID=9097133

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7213738A Granted FR2180507A1 (en) 1972-04-19 1972-04-19 Sun battery

Country Status (1)

Country Link
FR (1) FR2180507A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2334269A1 (en) * 1975-12-04 1977-07-01 Siemens Ag ELECTRODE-SCREEN, ESPECIALLY FOR SEMICONDUCTOR COMPONENTS

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2334269A1 (en) * 1975-12-04 1977-07-01 Siemens Ag ELECTRODE-SCREEN, ESPECIALLY FOR SEMICONDUCTOR COMPONENTS

Also Published As

Publication number Publication date
FR2180507B1 (en) 1978-03-03

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Legal Events

Date Code Title Description
ST Notification of lapse