GB426205A - Improvements in and relating to photo-electric cells and the like - Google Patents

Improvements in and relating to photo-electric cells and the like

Info

Publication number
GB426205A
GB426205A GB26631/33A GB2663133A GB426205A GB 426205 A GB426205 A GB 426205A GB 26631/33 A GB26631/33 A GB 26631/33A GB 2663133 A GB2663133 A GB 2663133A GB 426205 A GB426205 A GB 426205A
Authority
GB
United Kingdom
Prior art keywords
layer
oxide
metallic
cell
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26631/33A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Publication of GB426205A publication Critical patent/GB426205A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23KFEEDING FUEL TO COMBUSTION APPARATUS
    • F23K3/00Feeding or distributing of lump or pulverulent fuel to combustion apparatus
    • F23K3/16Over-feed arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105Treatment of the surface of the selenium or tellurium layer after having been made conductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Hybrid Cells (AREA)

Abstract

426,205. Light - sensitive cells. BRITISH THOMSON-HOUSTON CO., Ltd., Crown House, Aldwych, London.-(Assignees of Allgemeine Elecktricitõts-Ges. ; 2, Friedrich Karl-Ufer, Berlin) Sept. 27, 1933, No. 26631. Convention date, Sept. 28, 1932. [Class 40 (iii)] [See also Group XXXVI] In a photo-electric cell having a semiconducting layer of a compound of a metal on a metallic base, for example, cuprous oxide on a copper base, a layer of a metallic oxide is incorporated between the semi-conducting layer and a metallic layer acting as the second electrode of the cell. When the cell is constituted by tungsten oxide on a tungsten base, the intermediate layer may be formed of an oxide of silver or of nickel. The intermediate oxide layer may be formed by sputtering in an oxygen atmosphere and the metallic layer forming the counter or second electrode may be similarly formed by a glow discharge in a non-oxidizing atmosphere. Specification 389,470, [Group XXXVI], is referred to.
GB26631/33A 1932-09-28 1933-09-27 Improvements in and relating to photo-electric cells and the like Expired GB426205A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE426205X 1932-09-28

Publications (1)

Publication Number Publication Date
GB426205A true GB426205A (en) 1935-03-27

Family

ID=6477167

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26631/33A Expired GB426205A (en) 1932-09-28 1933-09-27 Improvements in and relating to photo-electric cells and the like

Country Status (2)

Country Link
FR (1) FR426205A (en)
GB (1) GB426205A (en)

Also Published As

Publication number Publication date
FR426205A (en) 1911-07-01

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