GB386143A - Improvements in and relating to photo-electric cells - Google Patents

Improvements in and relating to photo-electric cells

Info

Publication number
GB386143A
GB386143A GB4452/32A GB445232A GB386143A GB 386143 A GB386143 A GB 386143A GB 4452/32 A GB4452/32 A GB 4452/32A GB 445232 A GB445232 A GB 445232A GB 386143 A GB386143 A GB 386143A
Authority
GB
United Kingdom
Prior art keywords
photo
feb
relating
cuprous iodide
electrode member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4452/32A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB386143A publication Critical patent/GB386143A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

386,143. Light-sensitive. cells. INTERNATIONAL GENERAL ELECTRIC CO., Inc., 120, Broadway, New York, U.S.A. -(Assignees of Allgemeine Elektricitõts Ges. ; 2, Friedrich Karl-Ufer, Berlin.) Feb. 15, 1932, No. 4452. Convention date, Feb. 13, 1931. [Class 40 (iii).] A photo-electric cell comprises cuprous iodide formed between a metallic electrode member, which may be of copper, and a thin translucent metallic layer constituting the second-electrode. The cuprous iodide may be applied to the supporting electrode member by pressure or, by fusing.
GB4452/32A 1931-02-13 1932-02-15 Improvements in and relating to photo-electric cells Expired GB386143A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE386143X 1931-02-13

Publications (1)

Publication Number Publication Date
GB386143A true GB386143A (en) 1933-01-12

Family

ID=6370929

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4452/32A Expired GB386143A (en) 1931-02-13 1932-02-15 Improvements in and relating to photo-electric cells

Country Status (1)

Country Link
GB (1) GB386143A (en)

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