GB2540969B - Method of doping an organic semiconductor and doping composition - Google Patents
Method of doping an organic semiconductor and doping compositionInfo
- Publication number
- GB2540969B GB2540969B GB1513608.8A GB201513608A GB2540969B GB 2540969 B GB2540969 B GB 2540969B GB 201513608 A GB201513608 A GB 201513608A GB 2540969 B GB2540969 B GB 2540969B
- Authority
- GB
- United Kingdom
- Prior art keywords
- doping
- organic semiconductor
- composition
- doping composition
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D235/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings
- C07D235/02—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings condensed with carbocyclic rings or ring systems
- C07D235/04—Benzimidazoles; Hydrogenated benzimidazoles
- C07D235/06—Benzimidazoles; Hydrogenated benzimidazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached in position 2
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- C07D235/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings
- C07D235/02—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings condensed with carbocyclic rings or ring systems
- C07D235/04—Benzimidazoles; Hydrogenated benzimidazoles
- C07D235/18—Benzimidazoles; Hydrogenated benzimidazoles with aryl radicals directly attached in position 2
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D277/00—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings
- C07D277/60—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings condensed with carbocyclic rings or ring systems
- C07D277/62—Benzothiazoles
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- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H10K85/649—Aromatic compounds comprising a hetero atom
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/141—Side-chains having aliphatic units
- C08G2261/1412—Saturated aliphatic units
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- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
- C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
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- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
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- C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
- C08G2261/3246—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing nitrogen and sulfur as heteroatoms
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/50—Physical properties
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/70—Post-treatment
- C08G2261/79—Post-treatment doping
- C08G2261/792—Post-treatment doping with low-molecular weight dopants
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- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
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Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1513608.8A GB2540969B (en) | 2015-07-31 | 2015-07-31 | Method of doping an organic semiconductor and doping composition |
| JP2016140768A JP6940258B2 (ja) | 2015-07-31 | 2016-07-15 | 有機半導体をドーピングする方法およびドーピング組成物 |
| TW105122947A TW201712922A (zh) | 2015-07-31 | 2016-07-20 | 摻雜有機半導體之方法及摻雜組合物 |
| US15/219,717 US9960352B2 (en) | 2015-07-31 | 2016-07-26 | Method of doping an organic semiconductor and doping composition |
| KR1020160094565A KR20170015182A (ko) | 2015-07-31 | 2016-07-26 | 유기 반도체의 도핑 방법 및 도핑 조성물 |
| PCT/GB2016/052347 WO2017021712A1 (en) | 2015-07-31 | 2016-07-29 | Charge transfer salt, electronic device and method of forming the same |
| US15/749,248 US20180226583A1 (en) | 2015-07-31 | 2016-07-29 | Charge transfer salt, electronic device and method of forming the same |
| CN201610616266.8A CN106409665B (zh) | 2015-07-31 | 2016-07-29 | 掺杂有机半导体的方法和掺杂组合物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1513608.8A GB2540969B (en) | 2015-07-31 | 2015-07-31 | Method of doping an organic semiconductor and doping composition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201513608D0 GB201513608D0 (en) | 2015-09-16 |
| GB2540969A GB2540969A (en) | 2017-02-08 |
| GB2540969B true GB2540969B (en) | 2017-12-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1513608.8A Expired - Fee Related GB2540969B (en) | 2015-07-31 | 2015-07-31 | Method of doping an organic semiconductor and doping composition |
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| US (1) | US9960352B2 (enExample) |
| JP (1) | JP6940258B2 (enExample) |
| KR (1) | KR20170015182A (enExample) |
| CN (1) | CN106409665B (enExample) |
| GB (1) | GB2540969B (enExample) |
| TW (1) | TW201712922A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6224758B2 (ja) | 2016-03-29 | 2017-11-01 | 住友化学株式会社 | 発光素子及びその製造方法 |
| KR102691010B1 (ko) * | 2016-08-31 | 2024-07-31 | 엘지디스플레이 주식회사 | 유기발광소자 및 이를 구비한 유기발광 표시장치 |
| KR20240123845A (ko) | 2017-04-07 | 2024-08-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 표시 장치, 전자 기기, 및 조명 장치 |
| CN109390482B (zh) | 2017-08-10 | 2020-06-02 | 昆山国显光电有限公司 | 有机电致发光器件 |
| CN109817836A (zh) * | 2017-11-18 | 2019-05-28 | 昆山国显光电有限公司 | 有机电致发光器件 |
| JP7108493B2 (ja) * | 2018-08-06 | 2022-07-28 | 日本放送協会 | 有機薄膜および有機薄膜の製造方法、有機エレクトロルミネッセンス素子およびその製造方法、表示装置、照明装置、有機薄膜太陽電池、薄膜トランジスタ |
| JP2020088028A (ja) * | 2018-11-19 | 2020-06-04 | トヨタ自動車株式会社 | 熱電変換素子、熱電変換システム、及びそれらを用いる発電方法 |
| CN110845420A (zh) * | 2019-11-05 | 2020-02-28 | 五邑大学 | 一种化合物及其制备方法和作为n-型掺杂剂的应用 |
| CN113201244B (zh) * | 2021-04-30 | 2022-07-01 | 桂林理工大学 | 一种掺杂剂及其制备方法、应用、功能化乳胶漆 |
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| GB2379085A (en) * | 2001-04-04 | 2003-02-26 | Infineon Technologies Ag | Method for doping electrically conductive organic compounds |
| WO2008043515A2 (de) * | 2006-10-09 | 2008-04-17 | Novaled Ag | Verfahren zur räumlichen strukturierung der leuchtdichte von lichtemittierenden organischen halbleiterbauelementen, danach hergestelltes halbleiterbauelement und verwendung desselben |
| WO2011127075A1 (en) * | 2010-04-05 | 2011-10-13 | The Board Of Trustees Of The Leland Stanford Junior University. | N-type doped organic materials and methods therefor |
| US20140070178A1 (en) * | 2012-09-07 | 2014-03-13 | Postech Academy-Industry Foundation | Organic light-emitting device |
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| US20080015269A1 (en) * | 2006-04-17 | 2008-01-17 | Bazan Guillermo C | Hybrid polymer light-emitting devices |
| EP2061828B1 (en) | 2006-10-10 | 2018-11-21 | Dow Silicones Corporation | Silicone polymer emulsions |
| US20140154610A1 (en) * | 2011-07-29 | 2014-06-05 | Jsr Corporation | Aromatic copolymer having proton conductive group and uses thereof |
| TW201348241A (zh) * | 2011-12-30 | 2013-12-01 | Imp Innovations Ltd | 有機半導體材料之非習用性化學摻雜 |
| JP5993667B2 (ja) * | 2012-09-03 | 2016-09-14 | 日本放送協会 | 有機電界発光素子 |
| CN104247073B (zh) * | 2012-04-16 | 2017-07-18 | 日本放送协会 | 有机电致发光元件及其制造方法 |
| GB2513378A (en) * | 2013-04-25 | 2014-10-29 | Cambridge Display Tech Ltd | Device |
| CN107922595B (zh) * | 2015-07-01 | 2020-09-25 | 新加坡国立大学 | n-掺杂的导电聚合物材料 |
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2016
- 2016-07-15 JP JP2016140768A patent/JP6940258B2/ja active Active
- 2016-07-20 TW TW105122947A patent/TW201712922A/zh unknown
- 2016-07-26 US US15/219,717 patent/US9960352B2/en active Active
- 2016-07-26 KR KR1020160094565A patent/KR20170015182A/ko not_active Withdrawn
- 2016-07-29 CN CN201610616266.8A patent/CN106409665B/zh not_active Expired - Fee Related
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| GB2379085A (en) * | 2001-04-04 | 2003-02-26 | Infineon Technologies Ag | Method for doping electrically conductive organic compounds |
| WO2008043515A2 (de) * | 2006-10-09 | 2008-04-17 | Novaled Ag | Verfahren zur räumlichen strukturierung der leuchtdichte von lichtemittierenden organischen halbleiterbauelementen, danach hergestelltes halbleiterbauelement und verwendung desselben |
| WO2011127075A1 (en) * | 2010-04-05 | 2011-10-13 | The Board Of Trustees Of The Leland Stanford Junior University. | N-type doped organic materials and methods therefor |
| US20140070178A1 (en) * | 2012-09-07 | 2014-03-13 | Postech Academy-Industry Foundation | Organic light-emitting device |
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Also Published As
| Publication number | Publication date |
|---|---|
| US9960352B2 (en) | 2018-05-01 |
| GB2540969A (en) | 2017-02-08 |
| JP6940258B2 (ja) | 2021-09-22 |
| JP2017033929A (ja) | 2017-02-09 |
| TW201712922A (zh) | 2017-04-01 |
| GB201513608D0 (en) | 2015-09-16 |
| CN106409665A (zh) | 2017-02-15 |
| CN106409665B (zh) | 2022-02-18 |
| US20170033286A1 (en) | 2017-02-02 |
| KR20170015182A (ko) | 2017-02-08 |
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| PCNP | Patent ceased through non-payment of renewal fee |
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