GB2429114B - Semiconductor on insulator substrate and devices formed therefrom - Google Patents

Semiconductor on insulator substrate and devices formed therefrom

Info

Publication number
GB2429114B
GB2429114B GB0619840A GB0619840A GB2429114B GB 2429114 B GB2429114 B GB 2429114B GB 0619840 A GB0619840 A GB 0619840A GB 0619840 A GB0619840 A GB 0619840A GB 2429114 B GB2429114 B GB 2429114B
Authority
GB
United Kingdom
Prior art keywords
semiconductor
formed therefrom
devices formed
insulator substrate
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0619840A
Other languages
English (en)
Other versions
GB0619840D0 (en
GB2429114A (en
Inventor
Qi Xiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0619840D0 publication Critical patent/GB0619840D0/en
Publication of GB2429114A publication Critical patent/GB2429114A/en
Application granted granted Critical
Publication of GB2429114B publication Critical patent/GB2429114B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L29/78603—
    • H01L29/78684—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Inorganic Insulating Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB0619840A 2004-04-07 2005-03-28 Semiconductor on insulator substrate and devices formed therefrom Expired - Fee Related GB2429114B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/819,441 US7005302B2 (en) 2004-04-07 2004-04-07 Semiconductor on insulator substrate and devices formed therefrom
PCT/US2005/010574 WO2005101521A1 (en) 2004-04-07 2005-03-28 Semiconductor on insulator substrate and devices formed therefrom

Publications (3)

Publication Number Publication Date
GB0619840D0 GB0619840D0 (en) 2006-11-29
GB2429114A GB2429114A (en) 2007-02-14
GB2429114B true GB2429114B (en) 2009-04-01

Family

ID=34964796

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0619840A Expired - Fee Related GB2429114B (en) 2004-04-07 2005-03-28 Semiconductor on insulator substrate and devices formed therefrom

Country Status (8)

Country Link
US (2) US7005302B2 (enExample)
JP (1) JP2007533137A (enExample)
KR (1) KR101093785B1 (enExample)
CN (1) CN1998088B (enExample)
DE (1) DE112005000775B4 (enExample)
GB (1) GB2429114B (enExample)
TW (1) TWI360833B (enExample)
WO (1) WO2005101521A1 (enExample)

Families Citing this family (21)

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US7365357B2 (en) * 2005-07-22 2008-04-29 Translucent Inc. Strain inducing multi-layer cap
US7202513B1 (en) * 2005-09-29 2007-04-10 International Business Machines Corporation Stress engineering using dual pad nitride with selective SOI device architecture
US7495290B2 (en) * 2005-12-14 2009-02-24 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
KR100649874B1 (ko) * 2005-12-29 2006-11-27 동부일렉트로닉스 주식회사 에스오아이 웨이퍼를 이용한 트랜지스터 제조 방법
DE102006035669B4 (de) * 2006-07-31 2014-07-10 Globalfoundries Inc. Transistor mit einem verformten Kanalgebiet, das eine leistungssteigernde Materialzusammensetzung aufweist und Verfahren zur Herstellung
KR100850899B1 (ko) * 2007-02-09 2008-08-07 엘지전자 주식회사 박막 트랜지스터 및 그 제조방법
US7781288B2 (en) * 2007-02-21 2010-08-24 International Business Machines Corporation Semiconductor structure including gate electrode having laterally variable work function
KR100994995B1 (ko) * 2007-08-07 2010-11-18 삼성전자주식회사 ＤｙＳｃ０３ 막을 포함하는 반도체 박막의 적층 구조 및 그 형성방법
US7692224B2 (en) * 2007-09-28 2010-04-06 Freescale Semiconductor, Inc. MOSFET structure and method of manufacture
JP5190275B2 (ja) * 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
KR101535222B1 (ko) * 2008-04-17 2015-07-08 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US8835955B2 (en) * 2010-11-01 2014-09-16 Translucent, Inc. IIIOxNy on single crystal SOI substrate and III n growth platform
CN102751231A (zh) * 2012-03-13 2012-10-24 清华大学 一种半导体结构及其形成方法
JP5561311B2 (ja) * 2012-05-14 2014-07-30 ソニー株式会社 半導体装置
CN102683345B (zh) * 2012-05-22 2015-04-15 清华大学 半导体结构及其形成方法
CN102683388B (zh) * 2012-05-30 2016-06-29 清华大学 半导体结构及其形成方法
CN102903739B (zh) * 2012-10-19 2016-01-20 清华大学 具有稀土氧化物的半导体结构
CN102916039B (zh) * 2012-10-19 2016-01-20 清华大学 具有氧化铍的半导体结构
US9570588B2 (en) * 2014-12-29 2017-02-14 Globalfoundries Inc. Methods of forming transistor structures including forming channel material after formation processes to prevent damage to the channel material
CN108060457A (zh) * 2017-12-21 2018-05-22 苏州晶享嘉世光电科技有限公司 一种钪酸钆钇晶体及熔体法晶体生长方法
CN110284192A (zh) * 2019-06-17 2019-09-27 南京同溧晶体材料研究院有限公司 一种掺铒钪酸钆3μm中红外波段激光晶体及其制备方法

Citations (9)

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Publication number Priority date Publication date Assignee Title
US5830270A (en) * 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US20020140031A1 (en) * 2001-03-31 2002-10-03 Kern Rim Strained silicon on insulator structures
US20020195599A1 (en) * 2001-06-20 2002-12-26 Motorola, Inc. Low-defect semiconductor structure, device including the structure and method for fabricating structure and device
US20030008521A1 (en) * 2001-07-05 2003-01-09 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US20030020070A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Semiconductor structure for isolating high frequency circuitry and method for fabricating
US20030027408A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030047785A1 (en) * 2001-09-10 2003-03-13 Masahi Kawasaki Thin film transistor and matrix display device
WO2004061920A2 (en) * 2002-12-31 2004-07-22 Advanced Micro Devices, Inc. Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer
WO2004068585A1 (en) * 2003-01-23 2004-08-12 Advanced Micro Devices, Inc. Strained channel finfet

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
JP3372158B2 (ja) * 1996-02-09 2003-01-27 株式会社東芝 半導体装置及びその製造方法
JP2001110801A (ja) * 1999-10-05 2001-04-20 Takeshi Yao パターン形成方法、並びに電子素子、光学素子及び回路基板
JP4034627B2 (ja) * 2001-09-28 2008-01-16 テキサス インスツルメンツ インコーポレイテツド 集積回路及びその製造方法
JP2003303971A (ja) * 2002-04-09 2003-10-24 Matsushita Electric Ind Co Ltd 半導体基板及び半導体装置
US6717216B1 (en) * 2002-12-12 2004-04-06 International Business Machines Corporation SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830270A (en) * 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US20020140031A1 (en) * 2001-03-31 2002-10-03 Kern Rim Strained silicon on insulator structures
US20020195599A1 (en) * 2001-06-20 2002-12-26 Motorola, Inc. Low-defect semiconductor structure, device including the structure and method for fabricating structure and device
US20030008521A1 (en) * 2001-07-05 2003-01-09 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US20030020070A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Semiconductor structure for isolating high frequency circuitry and method for fabricating
US20030027408A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030047785A1 (en) * 2001-09-10 2003-03-13 Masahi Kawasaki Thin film transistor and matrix display device
WO2004061920A2 (en) * 2002-12-31 2004-07-22 Advanced Micro Devices, Inc. Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer
WO2004068585A1 (en) * 2003-01-23 2004-08-12 Advanced Micro Devices, Inc. Strained channel finfet

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
LimSeung-Gu et al, "Dielectric functions and optical bandgaps of high-k doelectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry", J. of applied Phys., American Instit. of Phys. Ny, US, vol91, No 7, 1 April 2002, pp 4500-4505, column 2, para 2 *
Lucovsky et al "Electronic structure of high-k transition metal oxides and their silicate ans aluminate alloys", J. of Vacuum Science and Tech. B, Microelectronics & Nanometer Structures Processing, Measurement and Phenomena, American. Inst. of Physics, NY, US, Vol 20 No 4, Jul 2002, pp 1739-1747 *
Schubert J et al, "Structural and Optical properties of epitaxial BATiO3 thin films grown on GdScO3(110)", Appl. Phys. Lett., American Instit. of Phys. Ny, US, vol 82 No 20, 19 May 2003, pp 3460-3462 *

Also Published As

Publication number Publication date
US20060138542A1 (en) 2006-06-29
CN1998088B (zh) 2010-08-25
CN1998088A (zh) 2007-07-11
JP2007533137A (ja) 2007-11-15
US7221025B2 (en) 2007-05-22
WO2005101521A1 (en) 2005-10-27
DE112005000775B4 (de) 2012-10-31
US20050224879A1 (en) 2005-10-13
KR20070012458A (ko) 2007-01-25
TWI360833B (en) 2012-03-21
US7005302B2 (en) 2006-02-28
DE112005000775T5 (de) 2007-05-31
TW200539278A (en) 2005-12-01
GB0619840D0 (en) 2006-11-29
GB2429114A (en) 2007-02-14
KR101093785B1 (ko) 2011-12-19

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20110328