GB2403575B - High burst rate write data paths for integrated circuit memory devices and methods of operating same - Google Patents

High burst rate write data paths for integrated circuit memory devices and methods of operating same

Info

Publication number
GB2403575B
GB2403575B GB0412446A GB0412446A GB2403575B GB 2403575 B GB2403575 B GB 2403575B GB 0412446 A GB0412446 A GB 0412446A GB 0412446 A GB0412446 A GB 0412446A GB 2403575 B GB2403575 B GB 2403575B
Authority
GB
United Kingdom
Prior art keywords
methods
integrated circuit
memory devices
write data
data paths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0412446A
Other languages
English (en)
Other versions
GB0412446D0 (en
GB2403575A (en
Inventor
Yun-Sang Lee
Jung-Bae Lee
One-Gyun La
Sung-Ryul Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2003-0042840A external-priority patent/KR100532444B1/ko
Priority claimed from US10/792,425 external-priority patent/US7054202B2/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to GB0625943A priority Critical patent/GB2433626B/en
Priority to GB0625944A priority patent/GB2433627B/en
Publication of GB0412446D0 publication Critical patent/GB0412446D0/en
Publication of GB2403575A publication Critical patent/GB2403575A/en
Application granted granted Critical
Publication of GB2403575B publication Critical patent/GB2403575B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G11C7/1027—Static column decode serial bit line access mode, i.e. using an enabled row address stroke pulse with its associated word line address and a sequence of enabled bit line addresses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M9/00—Parallel/series conversion or vice versa
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/107—Serial-parallel conversion of data or prefetch

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
GB0412446A 2003-06-03 2004-06-03 High burst rate write data paths for integrated circuit memory devices and methods of operating same Expired - Fee Related GB2403575B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0625943A GB2433626B (en) 2003-06-03 2004-06-03 High burst rate write data paths for integrated circuit memory devices and methods of operating same
GB0625944A GB2433627B (en) 2003-06-03 2004-06-03 High burst rate write data paths for integrated circuit memory devices and methods of operating same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20030035604 2003-06-03
KR10-2003-0042840A KR100532444B1 (ko) 2003-06-03 2003-06-27 Ｎ 비트 프리패치 구조로 2ｎ 비트 프리패치 스킴을구현하는 메모리 장치 및 이 메모리 장치의 2ｎ 비트프리패치 방법 및 자동 프리차아지 방법
US10/792,425 US7054202B2 (en) 2003-06-03 2004-03-03 High burst rate write data paths for integrated circuit memory devices and methods of operating same

Publications (3)

Publication Number Publication Date
GB0412446D0 GB0412446D0 (en) 2004-07-07
GB2403575A GB2403575A (en) 2005-01-05
GB2403575B true GB2403575B (en) 2007-05-16

Family

ID=33545117

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0412446A Expired - Fee Related GB2403575B (en) 2003-06-03 2004-06-03 High burst rate write data paths for integrated circuit memory devices and methods of operating same

Country Status (4)

Country Link
JP (1) JP4819325B2 (enrdf_load_stackoverflow)
DE (1) DE102004026526B4 (enrdf_load_stackoverflow)
GB (1) GB2403575B (enrdf_load_stackoverflow)
TW (1) TWI250530B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005001894A1 (de) * 2005-01-14 2006-08-03 Infineon Technologies Ag Synchroner Parallel-Serienwandler
JP5052056B2 (ja) * 2005-09-29 2012-10-17 エスケーハイニックス株式会社 半導体メモリ素子のデータ入力装置
JP4470183B2 (ja) 2006-08-28 2010-06-02 エルピーダメモリ株式会社 半導体記憶装置
KR20080065100A (ko) 2007-01-08 2008-07-11 주식회사 하이닉스반도체 반도체 메모리 소자와 그의 구동 방법
KR101094946B1 (ko) 2010-01-29 2011-12-15 주식회사 하이닉스반도체 반도체 집적 회로
JP2013206492A (ja) * 2012-03-27 2013-10-07 Toshiba Corp 半導体装置およびその駆動方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644502A (en) * 1983-03-31 1987-02-17 Fujitsu Limited Semiconductor memory device typically used as a video ram
US4745577A (en) * 1984-11-20 1988-05-17 Fujitsu Limited Semiconductor memory device with shift registers for high speed reading and writing
US4855959A (en) * 1986-07-04 1989-08-08 Nec Corporation Dual port memory circuit
US6459393B1 (en) * 1998-05-08 2002-10-01 International Business Machines Corporation Apparatus and method for optimized self-synchronizing serializer/deserializer/framer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW293107B (enrdf_load_stackoverflow) * 1994-10-28 1996-12-11 Matsushita Electric Ind Co Ltd
JP3788867B2 (ja) * 1997-10-28 2006-06-21 株式会社東芝 半導体記憶装置
JP2000163969A (ja) * 1998-09-16 2000-06-16 Fujitsu Ltd 半導体記憶装置
DE19951677B4 (de) * 1998-10-30 2006-04-13 Fujitsu Ltd., Kawasaki Halbleiterspeichervorrichtung
JP3859885B2 (ja) * 1998-11-24 2006-12-20 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP4083944B2 (ja) * 1999-12-13 2008-04-30 東芝マイクロエレクトロニクス株式会社 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644502A (en) * 1983-03-31 1987-02-17 Fujitsu Limited Semiconductor memory device typically used as a video ram
US4745577A (en) * 1984-11-20 1988-05-17 Fujitsu Limited Semiconductor memory device with shift registers for high speed reading and writing
US4855959A (en) * 1986-07-04 1989-08-08 Nec Corporation Dual port memory circuit
US6459393B1 (en) * 1998-05-08 2002-10-01 International Business Machines Corporation Apparatus and method for optimized self-synchronizing serializer/deserializer/framer

Also Published As

Publication number Publication date
GB0412446D0 (en) 2004-07-07
GB2403575A (en) 2005-01-05
DE102004026526B4 (de) 2010-09-23
JP2004362756A (ja) 2004-12-24
TWI250530B (en) 2006-03-01
JP4819325B2 (ja) 2011-11-24
TW200516595A (en) 2005-05-16
DE102004026526A1 (de) 2005-01-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20150603