GB2338592A - Single electron transistor - Google Patents

Single electron transistor Download PDF

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Publication number
GB2338592A
GB2338592A GB9813142A GB9813142A GB2338592A GB 2338592 A GB2338592 A GB 2338592A GB 9813142 A GB9813142 A GB 9813142A GB 9813142 A GB9813142 A GB 9813142A GB 2338592 A GB2338592 A GB 2338592A
Authority
GB
United Kingdom
Prior art keywords
transistor according
transistor
heterojunction
layer
band gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9813142A
Other languages
English (en)
Other versions
GB9813142D0 (en
Inventor
John Henry Jefferson
Timothy Jonathan Phillips
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Priority to GB9813142A priority Critical patent/GB2338592A/en
Publication of GB9813142D0 publication Critical patent/GB9813142D0/en
Priority to PCT/GB1999/001885 priority patent/WO1999066561A1/en
Priority to PCT/GB1999/001940 priority patent/WO1999066562A1/en
Priority to US09/719,484 priority patent/US6498354B1/en
Priority to EP99957113A priority patent/EP1088347B1/en
Priority to JP2000555299A priority patent/JP4864202B2/ja
Priority to US09/701,884 priority patent/US6753593B1/en
Priority to EP99928062A priority patent/EP1088346A1/en
Priority to JP2000555300A priority patent/JP2002518851A/ja
Priority to GB9914160A priority patent/GB2338599A/en
Publication of GB2338592A publication Critical patent/GB2338592A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/813—Quantum wire structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
GB9813142A 1998-06-19 1998-06-19 Single electron transistor Withdrawn GB2338592A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB9813142A GB2338592A (en) 1998-06-19 1998-06-19 Single electron transistor
GB9914160A GB2338599A (en) 1998-06-19 1999-06-18 Single electron transistor
EP99957113A EP1088347B1 (en) 1998-06-19 1999-06-18 Single charge carrier transistor and detection method using the same
PCT/GB1999/001940 WO1999066562A1 (en) 1998-06-19 1999-06-18 Quantum wire field-effect transistor and method of making the same
US09/719,484 US6498354B1 (en) 1998-06-19 1999-06-18 Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection
PCT/GB1999/001885 WO1999066561A1 (en) 1998-06-19 1999-06-18 Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection
JP2000555299A JP4864202B2 (ja) 1998-06-19 1999-06-18 単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法
US09/701,884 US6753593B1 (en) 1998-06-19 1999-06-18 Quantum wire field-effect transistor and method of making the same
EP99928062A EP1088346A1 (en) 1998-06-19 1999-06-18 Quantum wire field-effect transistor and method of making the same
JP2000555300A JP2002518851A (ja) 1998-06-19 1999-06-18 量子ワイヤー電界効果トランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9813142A GB2338592A (en) 1998-06-19 1998-06-19 Single electron transistor

Publications (2)

Publication Number Publication Date
GB9813142D0 GB9813142D0 (en) 1998-08-19
GB2338592A true GB2338592A (en) 1999-12-22

Family

ID=10833967

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9813142A Withdrawn GB2338592A (en) 1998-06-19 1998-06-19 Single electron transistor

Country Status (5)

Country Link
US (2) US6498354B1 (https=)
EP (2) EP1088347B1 (https=)
JP (2) JP4864202B2 (https=)
GB (1) GB2338592A (https=)
WO (2) WO1999066561A1 (https=)

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US6683337B2 (en) 2001-02-09 2004-01-27 Micron Technology, Inc. Dynamic memory based on single electron storage
US6978070B1 (en) * 2001-08-14 2005-12-20 The Programmable Matter Corporation Fiber incorporating quantum dots as programmable dopants
JP4334246B2 (ja) 2003-02-27 2009-09-30 富士通株式会社 量子半導体装置及びその製造方法
JP4304338B2 (ja) * 2004-01-13 2009-07-29 独立行政法人産業技術総合研究所 光検出素子
CA2568536A1 (en) 2004-06-04 2005-12-22 The Programmable Matter Corporation Layered composite film incorporating quantum dots as programmable dopants
US7465595B2 (en) 2004-11-09 2008-12-16 Fujitsu Limited Quantum device, manufacturing method of the same and controlling method of the same
DE112006001751B4 (de) * 2005-07-06 2010-04-08 International Rectifier Corporation, El Segundo Leistungs-Halbleiterbauteil und Verfahren zu Herstellung eines Halbleiterbauteils
US7358581B2 (en) * 2005-11-17 2008-04-15 Kulite Semiconductor Products, Inc. Quantum dot based pressure switch
EP1989737A4 (en) * 2006-02-17 2010-03-17 Ravenbrick Llc QUANTUM DOT CONTROL DEVICE
US7601946B2 (en) * 2006-09-12 2009-10-13 Ravenbrick, Llc Electromagnetic sensor incorporating quantum confinement structures
WO2008092038A1 (en) 2007-01-24 2008-07-31 Ravenbrick, Llc Thermally switched optical downconverting filter
US8363307B2 (en) * 2007-02-28 2013-01-29 Ravenbrick, Llc Multicolor light emitting device incorporating tunable quantum confinement devices
US7936500B2 (en) * 2007-03-02 2011-05-03 Ravenbrick Llc Wavelength-specific optical switch
CN101802679B (zh) 2007-07-11 2012-12-12 雷文布里克有限责任公司 热开关反射型光闸
EP2195689A4 (en) 2007-09-19 2012-05-02 Ravenbrick Llc WINDOW FILMS AND COATINGS WITH LOW EMISSIONS WITH NANOMASS BAR WIRE GRILES
US8169685B2 (en) 2007-12-20 2012-05-01 Ravenbrick, Llc Thermally switched absorptive window shutter
KR101302802B1 (ko) 2008-04-23 2013-09-02 라벤브릭 엘엘씨 반사성 및 열반사성 표면의 광택 조절
US9116302B2 (en) 2008-06-19 2015-08-25 Ravenbrick Llc Optical metapolarizer device
AU2009282812B2 (en) 2008-08-20 2013-02-21 Ravenbrick, Llc Methods for fabricating thermochromic filters
ES2711555T3 (es) 2009-04-10 2019-05-06 Ravenbrick Llc Filtro óptico conmutado térmicamente que incorpora una arquitectura de huésped-hospedador
US8643795B2 (en) 2009-04-10 2014-02-04 Ravenbrick Llc Thermally switched optical filter incorporating a refractive optical structure
WO2011053853A2 (en) * 2009-10-30 2011-05-05 Ravenbrick Llc Thermochromic filters and stopband filters for use with same
ES2748829T3 (es) 2010-03-29 2020-03-18 Ravenbrick Llc Dispositivo de cristal líquido termotrópico estabilizado por polímero
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
KR101526041B1 (ko) 2010-06-01 2015-06-04 라벤브릭 엘엘씨 다기능 건축 부품
US8933488B2 (en) * 2010-12-03 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS
CA2847185A1 (en) 2011-09-01 2013-03-07 Ravenbrick, Llc Thermotropic optical shutter incorporating coatable polarizers
US9859409B2 (en) * 2016-04-28 2018-01-02 International Business Machines Corporation Single-electron transistor with wrap-around gate

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Also Published As

Publication number Publication date
WO1999066561A1 (en) 1999-12-23
JP4864202B2 (ja) 2012-02-01
EP1088346A1 (en) 2001-04-04
US6498354B1 (en) 2002-12-24
GB9813142D0 (en) 1998-08-19
US6753593B1 (en) 2004-06-22
JP2002518850A (ja) 2002-06-25
EP1088347A1 (en) 2001-04-04
WO1999066562A1 (en) 1999-12-23
EP1088347B1 (en) 2011-11-23
JP2002518851A (ja) 2002-06-25

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)