GB2103014B - Semiconductor device responsive to ions - Google Patents

Semiconductor device responsive to ions

Info

Publication number
GB2103014B
GB2103014B GB08221136A GB8221136A GB2103014B GB 2103014 B GB2103014 B GB 2103014B GB 08221136 A GB08221136 A GB 08221136A GB 8221136 A GB8221136 A GB 8221136A GB 2103014 B GB2103014 B GB 2103014B
Authority
GB
United Kingdom
Prior art keywords
ions
semiconductor device
device responsive
responsive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08221136A
Other languages
English (en)
Other versions
GB2103014A (en
Inventor
Felix Rudolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUISSE FOND RECH MICROTECH
Original Assignee
SUISSE FOND RECH MICROTECH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUISSE FOND RECH MICROTECH filed Critical SUISSE FOND RECH MICROTECH
Publication of GB2103014A publication Critical patent/GB2103014A/en
Application granted granted Critical
Publication of GB2103014B publication Critical patent/GB2103014B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
GB08221136A 1981-07-24 1982-07-21 Semiconductor device responsive to ions Expired GB2103014B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8114501A FR2510260A1 (fr) 1981-07-24 1981-07-24 Dispositif semiconducteur sensible aux ions

Publications (2)

Publication Number Publication Date
GB2103014A GB2103014A (en) 1983-02-09
GB2103014B true GB2103014B (en) 1985-08-21

Family

ID=9260870

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08221136A Expired GB2103014B (en) 1981-07-24 1982-07-21 Semiconductor device responsive to ions

Country Status (6)

Country Link
US (1) US4636827A (en:Method)
JP (1) JPS5870155A (en:Method)
CH (1) CH649173A5 (en:Method)
DE (1) DE3226555A1 (en:Method)
FR (1) FR2510260A1 (en:Method)
GB (1) GB2103014B (en:Method)

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US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
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DE102009002060B4 (de) * 2009-03-31 2023-08-03 Endress+Hauser Conducta Gmbh+Co. Kg Ionensensitiver Sensor mit Mehrfachschichtaufbau im sensitiven Bereich sowie Verfahren zur Herstellung eines solchen Sensors
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
WO2012003363A1 (en) 2010-06-30 2012-01-05 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
JP2013540259A (ja) * 2010-06-30 2013-10-31 ライフ テクノロジーズ コーポレーション アレイ列積分器
TWI539172B (zh) 2010-06-30 2016-06-21 生命技術公司 用於測試離子感測場效電晶體（ｉｓｆｅｔ）陣列之裝置及方法
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
EP2589065B1 (en) 2010-07-03 2015-08-19 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
WO2012036679A1 (en) 2010-09-15 2012-03-22 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2522993B1 (en) * 2011-05-09 2015-11-25 Nxp B.V. FET based sensor with dual-gate stack
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8871549B2 (en) * 2013-02-14 2014-10-28 International Business Machines Corporation Biological and chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
EP2972280B1 (en) 2013-03-15 2021-09-29 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
JP6671274B2 (ja) 2013-03-15 2020-03-25 ライフ テクノロジーズ コーポレーション 薄伝導性素子を有する化学装置
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
CN107407656B (zh) 2014-12-18 2020-04-07 生命科技公司 使用大规模 fet 阵列测量分析物的方法和装置
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
KR102593647B1 (ko) 2014-12-18 2023-10-26 라이프 테크놀로지스 코포레이션 트랜스미터 구성을 갖춘 높은 데이터율 집적 회로
JP2017053794A (ja) * 2015-09-11 2017-03-16 株式会社東芝 電気化学センサ
US11002704B2 (en) * 2016-08-31 2021-05-11 Taiwan Semiconductor Manufacturing Company Limited Biosensor devices and methods of forming the same
JP2019056581A (ja) * 2017-09-20 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 電荷検出センサおよび電位計測システム
US11588095B2 (en) * 2018-09-28 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric biosensor and related method of formation
US20250107217A1 (en) * 2023-09-22 2025-03-27 Analog Devices International Unlimited Company Semiconductor devices to detect one or more environmental conditions

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NL282170A (en:Method) * 1961-08-17
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
US4037242A (en) * 1975-12-29 1977-07-19 Texas Instruments Incorporated Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device
DE2639398A1 (de) * 1976-09-01 1978-03-02 Johnson Controls Inc Kapazitive fuehleinrichtung fuer gasfoermige umweltprodukte
US4103227A (en) * 1977-03-25 1978-07-25 University Of Pennsylvania Ion-controlled diode
US4273636A (en) * 1977-05-26 1981-06-16 Kiyoo Shimada Selective chemical sensitive field effect transistor transducers
US4133735A (en) * 1977-09-27 1979-01-09 The Board Of Regents Of The University Of Washington Ion-sensitive electrode and processes for making the same
JPS5466194A (en) * 1977-11-04 1979-05-28 Kuraray Co Fet sensor
US4180771A (en) * 1977-12-02 1979-12-25 Airco, Inc. Chemical-sensitive field-effect transistor
US4198851A (en) * 1978-05-22 1980-04-22 University Of Utah Method and structure for detecting the concentration of oxygen in a substance
US4397714A (en) * 1980-06-16 1983-08-09 University Of Utah System for measuring the concentration of chemical substances

Also Published As

Publication number Publication date
DE3226555A1 (de) 1983-02-24
FR2510260A1 (fr) 1983-01-28
DE3226555C2 (en:Method) 1991-08-29
JPH0153745B2 (en:Method) 1989-11-15
FR2510260B1 (en:Method) 1983-12-09
US4636827A (en) 1987-01-13
JPS5870155A (ja) 1983-04-26
GB2103014A (en) 1983-02-09
CH649173A5 (fr) 1985-04-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980721