GB2060997A - Stratified charge memory divide - Google Patents

Stratified charge memory divide

Info

Publication number
GB2060997A
GB2060997A GB7926605A GB7926605A GB2060997A GB 2060997 A GB2060997 A GB 2060997A GB 7926605 A GB7926605 A GB 7926605A GB 7926605 A GB7926605 A GB 7926605A GB 2060997 A GB2060997 A GB 2060997A
Authority
GB
United Kingdom
Prior art keywords
row
gate
column
write
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7926605A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ERB D M
Original Assignee
ERB D M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ERB D M filed Critical ERB D M
Publication of GB2060997A publication Critical patent/GB2060997A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB7926605A 1978-01-03 1979-01-02 Stratified charge memory divide Withdrawn GB2060997A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86654178A 1978-01-03 1978-01-03

Publications (1)

Publication Number Publication Date
GB2060997A true GB2060997A (en) 1981-05-07

Family

ID=25347830

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7926605A Withdrawn GB2060997A (en) 1978-01-03 1979-01-02 Stratified charge memory divide

Country Status (4)

Country Link
EP (1) EP0007910A4 (enrdf_load_stackoverflow)
JP (1) JPH0160951B2 (enrdf_load_stackoverflow)
GB (1) GB2060997A (enrdf_load_stackoverflow)
WO (1) WO1979000474A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD1020530S1 (en) * 2023-06-28 2024-04-02 Weiwen CAI Table ornament

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796927A (en) * 1970-12-16 1974-03-12 Bell Telephone Labor Inc Three dimensional charge coupled devices
US3893152A (en) * 1973-07-25 1975-07-01 Hung Chang Lin Metal nitride oxide semiconductor integrated circuit structure
US3893085A (en) * 1973-11-28 1975-07-01 Ibm Read mostly memory cell having bipolar and FAMOS transistor
CA1074009A (en) * 1975-03-03 1980-03-18 Robert W. Brodersen Charge coupled device memory
US3974486A (en) * 1975-04-07 1976-08-10 International Business Machines Corporation Multiplication mode bistable field effect transistor and memory utilizing same
DE2543628C2 (de) * 1975-09-30 1987-05-07 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen
CH597997A5 (enrdf_load_stackoverflow) * 1976-02-24 1978-04-28 Lpa Les Produits Associes
DE2642145A1 (de) * 1976-09-20 1978-03-23 Siemens Ag Verfahren zum betrieb einer cid-anordnung
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
NL7700879A (nl) * 1977-01-28 1978-08-01 Philips Nv Halfgeleiderinrichting.
NL7701172A (nl) * 1977-02-04 1978-08-08 Philips Nv Halfgeleidergeheugeninrichting.
DE2730798A1 (de) * 1977-07-07 1979-01-25 Siemens Ag Verfahren zum herstellen einer aus einem feldeffekttransistor mit isolierter steuerelektrode und einem kondensator integrierten halbleiterspeicherzelle
DE2736473A1 (de) * 1977-08-12 1979-02-22 Siemens Ag Verfahren zum herstellen einer ein- transistor-speicherzelle
DE2743948A1 (de) * 1977-09-29 1979-04-12 Siemens Ag Dynamisches halbleiter-speicherelement
GB2095901B (en) * 1977-10-13 1983-02-23 Mohsen Amr Mohamed An mos transistor
US4190466A (en) * 1977-12-22 1980-02-26 International Business Machines Corporation Method for making a bipolar transistor structure utilizing self-passivating diffusion sources

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD1020530S1 (en) * 2023-06-28 2024-04-02 Weiwen CAI Table ornament

Also Published As

Publication number Publication date
JPH0160951B2 (enrdf_load_stackoverflow) 1989-12-26
EP0007910A1 (en) 1980-02-06
WO1979000474A1 (en) 1979-07-26
JPS55500033A (enrdf_load_stackoverflow) 1980-01-24
EP0007910A4 (en) 1980-11-28

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)