GB2056173B - Low-resistivity polycrystalline silicon film - Google Patents

Low-resistivity polycrystalline silicon film

Info

Publication number
GB2056173B
GB2056173B GB8024960A GB8024960A GB2056173B GB 2056173 B GB2056173 B GB 2056173B GB 8024960 A GB8024960 A GB 8024960A GB 8024960 A GB8024960 A GB 8024960A GB 2056173 B GB2056173 B GB 2056173B
Authority
GB
United Kingdom
Prior art keywords
low
polycrystalline silicon
silicon film
resistivity polycrystalline
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8024960A
Other languages
English (en)
Other versions
GB2056173A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB2056173A publication Critical patent/GB2056173A/en
Application granted granted Critical
Publication of GB2056173B publication Critical patent/GB2056173B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
GB8024960A 1979-08-10 1980-07-30 Low-resistivity polycrystalline silicon film Expired GB2056173B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/065,437 US4229502A (en) 1979-08-10 1979-08-10 Low-resistivity polycrystalline silicon film

Publications (2)

Publication Number Publication Date
GB2056173A GB2056173A (en) 1981-03-11
GB2056173B true GB2056173B (en) 1983-09-14

Family

ID=22062724

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8024960A Expired GB2056173B (en) 1979-08-10 1980-07-30 Low-resistivity polycrystalline silicon film

Country Status (6)

Country Link
US (1) US4229502A (it)
JP (1) JPS5629321A (it)
DE (1) DE3029055A1 (it)
FR (1) FR2463507A1 (it)
GB (1) GB2056173B (it)
IT (1) IT1131995B (it)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633822A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Preparation of semiconductor device
JPS5688818A (en) * 1979-12-17 1981-07-18 Hitachi Ltd Polycrystalline silicon membrane and its production
US4339285A (en) * 1980-07-28 1982-07-13 Rca Corporation Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
US4395467A (en) * 1981-12-30 1983-07-26 Rca Corporation Transparent conductive film having areas of high and low resistivity
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors
US4475955A (en) * 1982-12-06 1984-10-09 Harris Corporation Method for forming integrated circuits bearing polysilicon of reduced resistance
US4472210A (en) * 1983-01-07 1984-09-18 Rca Corporation Method of making a semiconductor device to improve conductivity of amorphous silicon films
US4559102A (en) * 1983-05-09 1985-12-17 Sony Corporation Method for recrystallizing a polycrystalline, amorphous or small grain material
JPH0638496B2 (ja) * 1983-06-27 1994-05-18 日本電気株式会社 半導体装置
JPS6165441A (ja) * 1984-09-07 1986-04-04 Mitsubishi Electric Corp プラズマ窒化シリコン絶縁膜の処理方法
US4551352A (en) * 1985-01-17 1985-11-05 Rca Corporation Method of making P-type hydrogenated amorphous silicon
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
GB2191510A (en) * 1986-04-16 1987-12-16 Gen Electric Plc Depositing doped polysilicon films
JP2821117B2 (ja) * 1986-11-29 1998-11-05 日本電気株式会社 半導体装置の製造方法
US5096856A (en) * 1988-03-01 1992-03-17 Texas Instruments Incorporated In-situ doped silicon using tertiary butyl phosphine
US5244822A (en) * 1988-05-16 1993-09-14 Kabushiki Kaisha Toshiba Method of fabricating bipolar transistor using self-aligned polysilicon technology
US5096842A (en) * 1988-05-16 1992-03-17 Kabushiki Kaisha Toshiba Method of fabricating bipolar transistor using self-aligned polysilicon technology
US5250388A (en) * 1988-05-31 1993-10-05 Westinghouse Electric Corp. Production of highly conductive polymers for electronic circuits
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon
DE69125886T2 (de) * 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
TW237562B (it) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US5334880A (en) * 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
JP3315730B2 (ja) * 1991-08-26 2002-08-19 マイクロリス、コーパレイシャン ピエゾ抵抗半導体センサ・ゲージ及びこれを作る方法
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JP2830718B2 (ja) * 1993-09-30 1998-12-02 日本電気株式会社 薄膜トランジスタの製造方法
US6040019A (en) * 1997-02-14 2000-03-21 Advanced Micro Devices, Inc. Method of selectively annealing damaged doped regions
US6319743B1 (en) 1999-04-14 2001-11-20 Mykrolis Corporation Method of making thin film piezoresistive sensor
US6255185B1 (en) 1999-05-19 2001-07-03 International Business Machines Corporation Two step anneal for controlling resistor tolerance
DE10053957C2 (de) * 2000-10-31 2002-10-31 Infineon Technologies Ag Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung
US6621404B1 (en) * 2001-10-23 2003-09-16 Lsi Logic Corporation Low temperature coefficient resistor
US7872897B2 (en) * 2003-04-11 2011-01-18 International Business Machines Corporation Programmable semiconductor device
KR20100040455A (ko) * 2008-10-10 2010-04-20 주식회사 동부하이텍 반도체 소자의 제조 방법
CN110359032A (zh) * 2019-07-18 2019-10-22 北京北方华创微电子装备有限公司 温度补偿方法及恒温区温度校准方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
US4198246A (en) * 1978-11-27 1980-04-15 Rca Corporation Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film

Also Published As

Publication number Publication date
FR2463507A1 (fr) 1981-02-20
GB2056173A (en) 1981-03-11
FR2463507B1 (it) 1984-10-19
IT8023728A0 (it) 1980-07-25
JPS5629321A (en) 1981-03-24
IT1131995B (it) 1986-06-25
US4229502A (en) 1980-10-21
DE3029055A1 (de) 1981-02-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee