JPS5363880A - Electrostatically deformable silicon thin film - Google Patents

Electrostatically deformable silicon thin film

Info

Publication number
JPS5363880A
JPS5363880A JP13402077A JP13402077A JPS5363880A JP S5363880 A JPS5363880 A JP S5363880A JP 13402077 A JP13402077 A JP 13402077A JP 13402077 A JP13402077 A JP 13402077A JP S5363880 A JPS5363880 A JP S5363880A
Authority
JP
Japan
Prior art keywords
thin film
silicon thin
deformable silicon
electrostatically deformable
electrostatically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13402077A
Other languages
Japanese (ja)
Inventor
Enu Emu Ai Gutsukeru Henrii
Toomasu Rarusen Sutebun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wisconsin Alumni Research Foundation
Original Assignee
Wisconsin Alumni Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wisconsin Alumni Research Foundation filed Critical Wisconsin Alumni Research Foundation
Publication of JPS5363880A publication Critical patent/JPS5363880A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F15FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
    • F15CFLUID-CIRCUIT ELEMENTS PREDOMINANTLY USED FOR COMPUTING OR CONTROL PURPOSES
    • F15C5/00Manufacture of fluid circuit elements; Manufacture of assemblages of such elements integrated circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L7/00Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
    • G01L7/02Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
    • G01L7/08Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
    • G01L7/086Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type with optical transmitting or indicating means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
JP13402077A 1976-11-08 1977-11-08 Electrostatically deformable silicon thin film Pending JPS5363880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73958376A 1976-11-08 1976-11-08

Publications (1)

Publication Number Publication Date
JPS5363880A true JPS5363880A (en) 1978-06-07

Family

ID=24972956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13402077A Pending JPS5363880A (en) 1976-11-08 1977-11-08 Electrostatically deformable silicon thin film

Country Status (4)

Country Link
JP (1) JPS5363880A (en)
CA (1) CA1094229A (en)
DE (1) DE2749937A1 (en)
GB (1) GB1591948A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60501784A (en) * 1983-07-07 1985-10-17 エイ・ティ・アンド・ティ・コーポレーション Integrated electroacoustic transducer
JP2007517252A (en) * 2003-12-26 2007-06-28 コミツサリア タ レネルジー アトミーク Optical component and method for manufacturing the same
JP2008539666A (en) * 2005-04-25 2008-11-13 アナログ デバイシス, インコーポレイテッド Micromachined microphones and multi-sensors and methods for producing them

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679434A (en) * 1985-07-25 1987-07-14 Litton Systems, Inc. Integrated force balanced accelerometer
GB8718639D0 (en) * 1987-08-06 1987-09-09 Spectrol Reliance Ltd Capacitive pressure sensors
JPH07104217B2 (en) * 1988-05-27 1995-11-13 横河電機株式会社 Vibration transducer and manufacturing method thereof
DE19547184A1 (en) * 1995-12-16 1997-06-19 Bosch Gmbh Robert Force sensor
WO1998025115A1 (en) * 1996-12-04 1998-06-11 Siemens Aktiengesellschaft Micromechanical component for recording fingerprints

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60501784A (en) * 1983-07-07 1985-10-17 エイ・ティ・アンド・ティ・コーポレーション Integrated electroacoustic transducer
JP2007517252A (en) * 2003-12-26 2007-06-28 コミツサリア タ レネルジー アトミーク Optical component and method for manufacturing the same
JP2008539666A (en) * 2005-04-25 2008-11-13 アナログ デバイシス, インコーポレイテッド Micromachined microphones and multi-sensors and methods for producing them
JP4812139B2 (en) * 2005-04-25 2011-11-09 アナログ デバイシス, インコーポレイテッド Micromachined microphones and multi-sensors and methods for producing them

Also Published As

Publication number Publication date
CA1094229A (en) 1981-01-20
DE2749937A1 (en) 1978-05-11
GB1591948A (en) 1981-07-01

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