AU535235B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- AU535235B2 AU535235B2 AU55900/80A AU5590080A AU535235B2 AU 535235 B2 AU535235 B2 AU 535235B2 AU 55900/80 A AU55900/80 A AU 55900/80A AU 5590080 A AU5590080 A AU 5590080A AU 535235 B2 AU535235 B2 AU 535235B2
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/02—Details
- H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
- H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
- H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54-28537 | 1979-03-12 | ||
JP2853679A JPS55120178A (en) | 1979-03-12 | 1979-03-12 | Mis variable capacitance diode with plural electrode structures |
JP2853879A JPS55120174A (en) | 1979-03-12 | 1979-03-12 | P-n junction variable capacitance diode with plural electrode structures |
JP2853779A JPS55120173A (en) | 1979-03-12 | 1979-03-12 | Schottky type variable capacitance diode with plural electrode structures |
JP54-28541 | 1979-03-12 | ||
JP2854179A JPS55121711A (en) | 1979-03-12 | 1979-03-12 | Parametric mixer using variable capacity diode |
JP54-28535 | 1979-03-12 | ||
JP54-28536 | 1979-03-12 | ||
JP2853579A JPS55120177A (en) | 1979-03-12 | 1979-03-12 | Variable capacitance diode with plural electrode structures |
JP2853979A JPS55120175A (en) | 1979-03-12 | 1979-03-12 | Variable capacitance diode with plural super-capacitance variable electrode structures |
JP54-28538 | 1979-03-12 | ||
JP54-28539 | 1979-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
AU5590080A AU5590080A (en) | 1980-09-18 |
AU535235B2 true AU535235B2 (en) | 1984-03-08 |
Family
ID=27549402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU55900/80A Ceased AU535235B2 (en) | 1979-03-12 | 1980-02-26 | Semiconductor device |
Country Status (5)
Country | Link |
---|---|
AU (1) | AU535235B2 (en) |
DE (1) | DE3009499A1 (en) |
GB (1) | GB2060250B (en) |
NL (1) | NL186283C (en) |
SE (1) | SE8001862L (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5799787A (en) * | 1980-12-12 | 1982-06-21 | Clarion Co Ltd | Variable capacitance device |
JPS57103368A (en) * | 1980-12-18 | 1982-06-26 | Clarion Co Ltd | Variable-capacitance device |
GB2104725B (en) * | 1981-07-17 | 1986-04-09 | Clarion Co Ltd | Variable capacitance device |
EP0072647B1 (en) * | 1981-08-14 | 1989-11-08 | Texas Instruments Incorporated | Varactor trimming for mmics |
JPS59154077A (en) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | Variable capacitance element |
DE10222764B4 (en) * | 2002-05-15 | 2011-06-01 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Semiconductor varactor and thus constructed oscillator |
CN117238974B (en) * | 2023-09-21 | 2024-06-07 | 扬州国宇电子有限公司 | Ultra-mutation varactor in arithmetic multi-ring region and preparation method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514431C3 (en) * | 1965-04-07 | 1974-08-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Semiconductor arrangement with pn junction for use as a voltage-dependent capacitance |
US3893147A (en) | 1973-09-05 | 1975-07-01 | Westinghouse Electric Corp | Multistate varactor |
-
1980
- 1980-02-26 AU AU55900/80A patent/AU535235B2/en not_active Ceased
- 1980-02-26 GB GB8006508A patent/GB2060250B/en not_active Expired
- 1980-03-10 SE SE8001862A patent/SE8001862L/en not_active Application Discontinuation
- 1980-03-11 NL NL8001451A patent/NL186283C/en not_active IP Right Cessation
- 1980-03-12 DE DE19803009499 patent/DE3009499A1/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
GB2060250B (en) | 1983-12-14 |
NL8001451A (en) | 1980-09-16 |
NL186283B (en) | 1990-05-16 |
AU5590080A (en) | 1980-09-18 |
GB2060250A (en) | 1981-04-29 |
NL186283C (en) | 1990-10-16 |
DE3009499A1 (en) | 1980-09-18 |
SE8001862L (en) | 1980-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU523568B2 (en) | Semiconductor laser device | |
AU506552B2 (en) | Semiconductor device | |
JPS55118651A (en) | Semiconductor device | |
AU6242780A (en) | Microchromatographic device | |
JPS55133562A (en) | Semiconductor device | |
AU535049B2 (en) | Secretafacient device | |
AU523622B2 (en) | Solar-cell-grade silicon | |
JPS5637680A (en) | Semiconductor device | |
AU527777B2 (en) | Wafers | |
EP0023782A3 (en) | Semiconductor device | |
AU5655280A (en) | Breathalyser device | |
JPS567466A (en) | Selffalignment semiconductor device | |
JPS55140272A (en) | Semiconductor device | |
JPS567450A (en) | Semiconductor device | |
JPS567465A (en) | Semiconductor device | |
JPS5687395A (en) | Semiconductor device | |
DE3071242D1 (en) | Semiconductor device | |
JPS55162248A (en) | Semiconductor device | |
JPS5666049A (en) | Semiconductor device | |
GB2043343B (en) | Semiconductor device | |
GB2061001B (en) | Semiconductor device | |
JPS5676581A (en) | Semiconductor device | |
DE3071877D1 (en) | Semiconductor device | |
DE3066946D1 (en) | Semiconductor master-slice device | |
AU518291B2 (en) | Semiconductor device |