GB201402126D0 - Method of processing a substrate - Google Patents

Method of processing a substrate

Info

Publication number
GB201402126D0
GB201402126D0 GBGB1402126.5A GB201402126A GB201402126D0 GB 201402126 D0 GB201402126 D0 GB 201402126D0 GB 201402126 A GB201402126 A GB 201402126A GB 201402126 D0 GB201402126 D0 GB 201402126D0
Authority
GB
United Kingdom
Prior art keywords
substrate
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1402126.5A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Priority to GBGB1402126.5A priority Critical patent/GB201402126D0/en
Publication of GB201402126D0 publication Critical patent/GB201402126D0/en
Priority to TW104103889A priority patent/TWI661068B/zh
Priority to JP2015022202A priority patent/JP2015163736A/ja
Priority to US14/615,458 priority patent/US20150225841A1/en
Priority to EP15154232.1A priority patent/EP2905354B1/en
Priority to CN201510065284.7A priority patent/CN104831251B/zh
Priority to KR1020150019203A priority patent/KR20150093622A/ko
Priority to KR1020210125866A priority patent/KR102352695B1/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/76—Apparatus for connecting with build-up interconnects
    • H01L2224/7615—Means for depositing
    • H01L2224/7618—Means for blanket deposition
    • H01L2224/76185—Means for physical vapour deposition [PVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
GBGB1402126.5A 2014-02-07 2014-02-07 Method of processing a substrate Ceased GB201402126D0 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GBGB1402126.5A GB201402126D0 (en) 2014-02-07 2014-02-07 Method of processing a substrate
TW104103889A TWI661068B (zh) 2014-02-07 2015-02-05 處理基材的方法
JP2015022202A JP2015163736A (ja) 2014-02-07 2015-02-06 基板の処理方法
US14/615,458 US20150225841A1 (en) 2014-02-07 2015-02-06 Method of processing a substrate
EP15154232.1A EP2905354B1 (en) 2014-02-07 2015-02-06 Method of processing a substrate
CN201510065284.7A CN104831251B (zh) 2014-02-07 2015-02-06 一种对衬底进行处理的方法
KR1020150019203A KR20150093622A (ko) 2014-02-07 2015-02-09 기판을 처리하는 방법
KR1020210125866A KR102352695B1 (ko) 2014-02-07 2021-09-23 기판을 처리하는 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1402126.5A GB201402126D0 (en) 2014-02-07 2014-02-07 Method of processing a substrate

Publications (1)

Publication Number Publication Date
GB201402126D0 true GB201402126D0 (en) 2014-03-26

Family

ID=50390621

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1402126.5A Ceased GB201402126D0 (en) 2014-02-07 2014-02-07 Method of processing a substrate

Country Status (7)

Country Link
US (1) US20150225841A1 (enExample)
EP (1) EP2905354B1 (enExample)
JP (1) JP2015163736A (enExample)
KR (2) KR20150093622A (enExample)
CN (1) CN104831251B (enExample)
GB (1) GB201402126D0 (enExample)
TW (1) TWI661068B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US10748986B2 (en) 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
JP2671835B2 (ja) * 1994-10-20 1997-11-05 日本電気株式会社 スパッタ装置とその装置を用いた半導体装置の製造方法
JP2000355766A (ja) * 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
CN201006893Y (zh) * 2006-08-28 2008-01-16 深圳豪威真空光电子股份有限公司 基片冷却装置
US8002463B2 (en) * 2008-06-13 2011-08-23 Asm International N.V. Method and device for determining the temperature of a substrate
EP2530183A4 (en) * 2010-01-26 2015-11-18 Panasonic Ip Man Co Ltd DEVICE FOR PRODUCING A THIN LAYER, METHOD FOR PRODUCING A THIN LAYER AND SUBSTRATE CONVEYING ROLLERS
JP5873251B2 (ja) * 2011-04-28 2016-03-01 キヤノンアネルバ株式会社 基板トレイ及び該トレイを用いた基板処理装置
WO2013070978A2 (en) * 2011-11-08 2013-05-16 Intevac, Inc. Substrate processing system and method

Also Published As

Publication number Publication date
EP2905354A1 (en) 2015-08-12
KR102352695B1 (ko) 2022-01-17
US20150225841A1 (en) 2015-08-13
CN104831251A (zh) 2015-08-12
TW201538770A (zh) 2015-10-16
KR20210118797A (ko) 2021-10-01
CN104831251B (zh) 2020-08-14
EP2905354B1 (en) 2021-09-15
JP2015163736A (ja) 2015-09-10
TWI661068B (zh) 2019-06-01
KR20150093622A (ko) 2015-08-18

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Legal Events

Date Code Title Description
S30Z Assignments for licence or security reasons

Free format text: APPLICANT: SPTS TECHNOLOGIES LIMITED CHARGOR: (SECURITY AGREEMENT) JPMORGAN CHASE BANK, N.A

AT Applications terminated before publication under section 16(1)