TWI661068B - 處理基材的方法 - Google Patents

處理基材的方法 Download PDF

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Publication number
TWI661068B
TWI661068B TW104103889A TW104103889A TWI661068B TW I661068 B TWI661068 B TW I661068B TW 104103889 A TW104103889 A TW 104103889A TW 104103889 A TW104103889 A TW 104103889A TW I661068 B TWI661068 B TW I661068B
Authority
TW
Taiwan
Prior art keywords
substrate
cooling gas
gas
substrate support
pvd
Prior art date
Application number
TW104103889A
Other languages
English (en)
Chinese (zh)
Other versions
TW201538770A (zh
Inventor
Anthony Paul Wilby
安東尼Ｐ 維爾拜
Stephen R. Burgess
史帝芬Ｒ 柏吉斯
Original Assignee
Spts Technologies Limited
英商Ｓｐｔｓ科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spts Technologies Limited, 英商Ｓｐｔｓ科技公司 filed Critical Spts Technologies Limited
Publication of TW201538770A publication Critical patent/TW201538770A/zh
Application granted granted Critical
Publication of TWI661068B publication Critical patent/TWI661068B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • H10P14/22—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/76—Apparatus for connecting with build-up interconnects
    • H01L2224/7615—Means for depositing
    • H01L2224/7618—Means for blanket deposition
    • H01L2224/76185—Means for physical vapour deposition [PVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW104103889A 2014-02-07 2015-02-05 處理基材的方法 TWI661068B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1402126.5 2014-02-07
GBGB1402126.5A GB201402126D0 (en) 2014-02-07 2014-02-07 Method of processing a substrate

Publications (2)

Publication Number Publication Date
TW201538770A TW201538770A (zh) 2015-10-16
TWI661068B true TWI661068B (zh) 2019-06-01

Family

ID=50390621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104103889A TWI661068B (zh) 2014-02-07 2015-02-05 處理基材的方法

Country Status (7)

Country Link
US (1) US20150225841A1 (enExample)
EP (1) EP2905354B1 (enExample)
JP (1) JP2015163736A (enExample)
KR (2) KR20150093622A (enExample)
CN (1) CN104831251B (enExample)
GB (1) GB201402126D0 (enExample)
TW (1) TWI661068B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US10748986B2 (en) * 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
JP2671835B2 (ja) * 1994-10-20 1997-11-05 日本電気株式会社 スパッタ装置とその装置を用いた半導体装置の製造方法
JP2000355766A (ja) * 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
CN201006893Y (zh) * 2006-08-28 2008-01-16 深圳豪威真空光电子股份有限公司 基片冷却装置
US8002463B2 (en) * 2008-06-13 2011-08-23 Asm International N.V. Method and device for determining the temperature of a substrate
JP4786772B2 (ja) * 2010-01-26 2011-10-05 パナソニック株式会社 薄膜の製造装置、薄膜の製造方法及び基板搬送ローラ
JP5873251B2 (ja) * 2011-04-28 2016-03-01 キヤノンアネルバ株式会社 基板トレイ及び該トレイを用いた基板処理装置
MY204526A (en) * 2011-11-08 2024-09-02 Intevac Inc Substrate processing system and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system

Also Published As

Publication number Publication date
KR20150093622A (ko) 2015-08-18
CN104831251A (zh) 2015-08-12
KR20210118797A (ko) 2021-10-01
EP2905354B1 (en) 2021-09-15
GB201402126D0 (en) 2014-03-26
US20150225841A1 (en) 2015-08-13
KR102352695B1 (ko) 2022-01-17
CN104831251B (zh) 2020-08-14
TW201538770A (zh) 2015-10-16
EP2905354A1 (en) 2015-08-12
JP2015163736A (ja) 2015-09-10

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