TWI755387B - 直流磁控濺射設備 - Google Patents
直流磁控濺射設備 Download PDFInfo
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 131
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 claims description 7
- 238000010849 ion bombardment Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims 7
- 235000012431 wafers Nutrition 0.000 description 65
- 239000010408 film Substances 0.000 description 64
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 18
- 238000009826 distribution Methods 0.000 description 9
- 230000003628 erosive effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000003550 marker Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005494 condensation Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
一種用於將一膜沉積在一基板上的直流磁控濺射設備,該直流磁控濺射設備包含:一腔室;一基板支撐件,其位於該腔室內;一直流磁控管;以及一電信號供應裝置,其用於供應一電偏壓信號,該電偏壓信號在使用中致使離子轟擊位於該基板支撐件上之一基板;其中該基板支撐件包含由一邊緣區域圍繞之一中心區域,該中心區域相對於該邊緣區域抬高。
Description
發明領域
本發明係關於用於將膜沉積在基板上之直流磁控濺射設備。本發明亦係關於將膜沉積在基板上之相關方法。
發明背景
許多MEMS(微型電機械系統)裝置如今將諸如氮化鋁(AlN)之壓電材料及諸如鋁氮化鈧(AlScN)之雙金屬氮化物作為裝置控制中之組分使用。在許多裝置中,沉積壓電薄膜之應力狀態對裝置之性質及有效性具有直接影響。諸如薄膜及懸臂之裝置為其中沉積壓電薄膜之應力狀態極為重要之裝置的實例。一些裝置適於具有適度壓縮應力之膜,而其他裝置適於具有適度拉張應力之膜。許多裝置需要應力中之僅僅很小的變化,無論其性質具壓縮性亦或是拉張性。
高度定向(002)氮化鋁顆粒為許多MEMS裝置發揮正確的功能之關健。為了達成優良顆粒質感,重要的為使用高真空沉積環境及高晶圓溫度。歸咎於氮化鋁之冷凝之放熱焓,高目標功率(對於200mm晶圓而言,大於
5kW之目標功率)導致高溫。理想地,沉積膜之應力狀態將以近於零之值跨越晶圓為完全均勻的。此將引起適於高產率裝置製造之均勻裝置性質。然而,歸咎於諸如膜厚度、離子轟擊及溫度之因素的變化,此理想狀態不能達成。通常,400℃或更高相對高的晶圓溫度為形成具有優良質感之氮化鋁結晶所必需,但此等高溫致使膜以拉張狀態形成。純熱性質之氮化鋁沉積具有跨越沉積膜之相對均勻的應力分佈。然而,膜以高度拉張應力狀態沉積。此均勻性係歸咎於沉積期間之高度均勻的晶圓溫度,該溫度繼而歸咎於沉積期間晶圓表面上之電漿物種之平緩均勻的冷凝而達成。然而,在晶圓冷卻及緩和時由收縮所引起之膜的破裂為重大問題。歸咎於膜之破裂,應力在晶圓中心崩潰。圖1展示與跨越晶圓之徑向位置有關的熱沉積氮化鋁膜之應力值。可見,膜之總應力狀態為高度拉張。亦可見,在跨越膜之應力值中存在約100MPa之變化。
若氮化鋁膜藉由直流磁控濺射技術沉積,其中射頻電力施加於晶圓以誘發直流偏壓,則在沉積膜中觀察到不同應力特性。圖2展示與使用直流磁控濺射技術沉積之氮化鋁膜之徑向位置有關的應力,其中該直流磁控濺射技術利用所施加的射頻電力來誘發直流偏壓。可見,與圖1相比,平均應力值顯著減小。在圖2所示應力分佈中,平均應力為約50MPa,且最大應力值為約250MPa。圖2中之應力分佈的均勻性顯著小於圖1之應力分佈的均勻性,其中在圖2中觀察到將近500MPa之變化。因此,跨
越晶圓之應力的變化為膜之平均應力的將近10倍。可以很容易地解釋此等結果。所施加之射頻電力誘發直流偏壓及晶圓表面處之相關電場。這增大來自晶圓表面上之電漿的離子轟擊。離子轟擊壓緊沉積膜以產生更壓縮的應力狀態。針對在許多MEMs裝置中使用而言,具有較小拉張應力之氮化鋁膜可為理想的。對於許多應用而言,-50至+50MPa範圍內之應力值為理想的,但跨越膜之高程度應力非均勻性為不理想的。應力非均勻性係歸咎於濺射系統中之磁控管的典型設計,該種設計的磁控管經配置來在晶圓上達成均勻沉積厚度。此導致目標邊緣處之侵蝕比目標中心處之侵蝕更嚴重。此繼而導致與目標中心相關聯之「次要」侵蝕帶及與目標邊緣相關聯之「主要」侵蝕帶。雖然此配置對維持均勻膜厚度而言為理想的,但本發明人認識到,該配置在使用所施加的射頻電力來控制平均應力時存在問題。主要侵蝕帶在目標邊緣處之位置導致目標邊緣處之與中心相比的遠遠更大程度的離子化。然後,晶圓表面處之電場在邊緣處產生與中心相比的遠遠更大的離子轟擊量,且此導致膜之更加拉張的中心及更加壓縮的邊緣。對於給定目標大小而言,歸咎於主要侵蝕帶之較大的影響,增大的晶圓大小將導致晶圓中心與邊緣處之應力之間的較大差值。
將非常期望提供一種沉積氮化鋁膜之方式,該等氮化鋁膜不具有強烈拉張之性質,但與使用具有直流偏壓的磁控濺射之先前技術方法相比,具有跨越晶圓
之應力中之減小的變化,其中該等先前技術方法諸如用來產生圖2所示結果之方法。
發明概要
本發明在其實施例中之至少一些者中解決此等問題及需求。雖然本發明特別適用於氮化鋁膜之沉積,但其亦適用於其他材料之沉積。
根據本發明之第一態樣,提供用於將膜沉積在基板上之直流磁控濺射設備,包含:腔室;基板支撐件,其位於腔室內;直流磁控管;以及電信號供應裝置,其用於供應電偏壓信號,該電偏壓信號在使用中致使離子轟擊位於基板支撐件上之基板;其中基板支撐件包含由邊緣區域圍繞之中心區域,中心區域相對於邊緣區域抬高。
在使用中,平坦基板可位於基板支撐件之中心區域上,以便基板之一部分覆蓋邊緣區域。然後,基板之覆蓋邊緣區域的部分與邊緣區域間隔開。驚奇地已發現,此佈置可在跨越沉積膜之應力均勻性中提供實質上的改良。另一優點在於,沉積膜之平均應力可為相對低的。這使得沉積膜諸如在MEMs中適於若干有效應用。
基板支撐件可包含自邊緣區域通向中心區域之階部。階部可具有0.1至1.0mm範圍內之高度。較佳
地,階部具有0.2至0.5mm範圍內之高度。
中心區域可界定實質上平坦的平台區域。
電信號供應裝置可供應射頻偏壓信號。
電偏壓信號可致使直流偏壓誘發,從而致使離子轟擊基板。
通常,電偏壓信號供應至基板支撐件。
直流磁控管可為脈衝直流磁控管。可替代地,直流磁控管可為非脈衝直流磁控管。
通常,直流磁控管包含目標。目標由適合材料製成,該適合材料可作為膜形成製程之一部分地自目標濺射。
直流磁控管可為平衡磁控管或不平衡磁控管。
該設備可包含旋轉裝置以用於在膜沉積期間旋轉基板。旋轉裝置可形成基板支撐件之一部分。旋轉裝置可為位於基板支撐件中之圓盤(puck)。
基板支撐件可為平台。
本發明之包含中心區域及邊緣區域的基板支撐件可以若干方式便利地製造。研磨製程可用來製造基板支撐件。這在基板支撐件包含邊緣區域與中心區域之間的階部時尤為便利。
根據本發明之第二態樣,提供將膜沉積在基板上之方法,包含以下步驟:將基板定位於腔室中之基板支撐件上;以及
使用直流磁控濺射技術製程自基板沉積膜,其中電偏壓信號致使離子轟擊基板;其中:基板支撐件包含由邊緣區域圍繞之中心區域,中心區域相對於邊緣區域抬高,且基板位於中心區域上,以便基板之一部分覆蓋邊緣區域且與該邊緣區域間隔開。
該膜可為金屬氮化物膜。該膜可為氮化鋁膜。該膜可為(002)定向氮化鋁膜。
該膜可為雙金屬氮化物膜,諸如AlScN膜。
然而,原則上,該膜可為可藉由直流磁控濺射技術沉積之任何膜。本發明特別適合於其中公差要求嚴格且需要對應力均勻性具有嚴密控制的膜之沉積。該膜可藉由反應濺射技術沉積。
電偏壓信號可產生直流偏壓。
電偏壓信號可為射頻偏壓信號。
通常,基板延伸超過邊緣區域。通常,基板支撐件具有相關直徑且基板具有相關直徑。在此等實施例中,基板直徑通常比基板支撐件直徑更大。
基板可在膜之沉積期間旋轉。已發現,此舉可在跨越膜之膜應力均勻性中引起進一步的改良。
該膜可為薄膜。在沉積已完成之後,膜可具有100微米或更薄之厚度。然而,本發明可用來沉積任何所要厚度之膜。
直流磁控濺射技術製程可藉由1至20mTorr托範圍內之腔室壓力進行。
在直流磁控濺射技術製程期間,基板支撐件可處於100至400℃範圍內之溫度下。
電偏壓信號可具有-20至50V範圍內之電壓。
通常,基板為平坦基板,諸如晶圓。
基板可為半導體基板,諸如半導體晶圓。基板可為矽基板。
雖然本發明描述於上文,但其擴展至上文或者以下描述、圖式或申請專利範圍中闡明之特徵的任何發明組合。例如,相對於本發明之第一態樣描述之任何特徵亦與本發明之第二態樣結合進行揭示,且反之亦然。
30:設備
32:腔室
34:直流磁控裝置/磁控裝置
34a:目標背襯板
34b:磁體
36:目標
38:基板支撐件
38a:邊緣區域
38b:中心區域
38c:階部
38d:支撐結構
40:直流電力供應/電力供應
42:射頻電力供應/電力供應
44:控制器
46:基板晶圓
50、52:曲線
60、80:應力分佈
70:階梯式平台
72:圓盤
Xmm:階部高度
Ymm:中心區域直徑
Zmm:邊緣區域直徑
根據本發明之設備與方法的實施例現將參考隨附圖式進行描述,其中:圖1展示與用於熱磁控沉積製程之晶圓徑向位置有關的AlN膜應力;圖2展示與用於其中射頻電力施加於晶圓的磁控沉積製程之晶圓徑向位置有關的AlN膜應力;圖3展示本發明之設備;圖4為本發明之基板支撐件的側視圖;圖5展示與使用兩個階梯式基板支撐件獲得之晶圓徑向位置有關的AlN膜應力;圖6展示與晶圓徑向位置有關的不對稱AlN膜應力輪廓;
圖7為具有基板旋轉設施之階梯式基板支撐件的局部透視圖;且圖8展示與在沉積期間旋轉之晶圓的晶圓位置有關的AlN膜應力。
詳細說明
圖3展示本發明之總體描繪為30的設備。設備30包含腔室32,腔室32含有:直流磁控裝置34;目標36,其中材料藉由磁控裝置34自目標36濺射;以及基板支撐件38,其支撐基板(未展示),其中所要材料在該基板上沉積。在圖3所示實施例中,腔室為圓柱形,不過在原則上亦可使用其他腔室形狀。為簡化表示,磁控濺射裝置之其他一般態樣,諸如氣體進口及出口,展示於圖3中。
直流磁控裝置34包含目標背襯板34a,目標背襯板34a充當腔室32之蓋件。目標36結合至目標背襯板34a。可旋轉磁體34b靠近且相對目標背襯板34a及目標36之面定位。脈衝直流電力自直流電力供應40施加於目標36。射頻電力自射頻電力供應42施加於基板支撐件38,以便將直流電偏壓提供至基板支撐件。通常,出於慣例,在13.56MHz下驅動基板支撐件38,不過本發明不限於此。電力供應40、42之操作受控於控制器44。控制器44可為具有適合圖形使用者介面之電腦。
在使用中,晶圓位於基板支撐件38上,該基板支撐件經驅動以產生負直流偏壓。將適合氣體混合物引
入腔室,且將脈衝負高直流電壓施加於目標背襯板34a/目標36,目標背襯板34a/目標36進而充當陰極。這產生高密度電漿。晶圓座置於陰極之主要侵蝕軌道內側,該軌道由磁體34b之旋轉路徑限定。在不希望受限於任何特定理論或局面的情況下,咸信在目標邊緣處存在與中心相比的通常遠遠更高程度的離子化,且晶圓處之直流偏壓在晶圓邊緣處產生與中心相比的更大的離子轟擊。這被認為引起跨越晶圓之通常很高程度的應力非均勻性。
圖4更詳細地展示基板支撐件38。可見,基板支撐件呈具有邊緣區域38a之階梯式平台之形式,邊緣區域38a經由階部38c與抬高的中心區域38b連通。邊緣區域38a及中心區域38b支撐在支撐結構38d上。支撐結構38d可賦能於平台升高及下降,如在此項技術中熟知的。圖4亦展示位於基板支撐件38上之基板晶圓46。平坦基板晶圓46齊平地置於中心區域38b上,且因此相對於邊緣部分38a為抬高的,如圖4所示。基板晶圓46經大小設計以便其懸於邊緣區域38a之上,且與邊緣區域38a間隔開。在不希望受限於任何特定理論或局面的情況下,咸信基板支撐件38之階梯式輪廓具有兩種效應。第一種,晶圓基板邊緣處之射頻耦合減小,從而減小相對於晶圓中心之離子轟擊。這使得沉積膜之邊緣輪廓更加拉張。因為晶圓中心亦拉張,所以跨越晶圓之應力的變化減小。第二種,在晶圓基板邊緣處不存在基板支撐件與晶圓基板之間的直接接觸,這被認為用以藉由基板支撐件減小晶圓之接觸冷卻。
晶圓基板藉由離子轟擊在沉積過程中受熱。因為晶圓中心與基板支撐件之中心區域38b處於熱接觸中,所以晶圓之中心區域藉由基板支撐件冷卻。晶圓基板邊緣不接收直接接觸冷卻,且因此經受較高溫度。這使得基板邊緣更加拉張,從而再次用於減小跨越晶圓之應力的整體變化。
將瞭解,習知先前技術基板支撐件為平坦的,其中晶圓跨越基板支撐件之全部面積與基板支撐件接觸。表1提供習知平坦的先前技術平台及本發明之平台的兩個實施例之尺寸,該兩個實施例用標記1及標記2表示。在表1中,X對應於階部高度,Y對應於中心區域直徑,且Z對應於邊緣區域直徑。此等尺寸適於支撐200mm直徑的晶圓。通常,階部高度小於1.0mm,不過將瞭解,階部高度及基板支撐件之其他尺寸可酌情變化,以便產生用於所要基板大小之加熱及射頻條件與具有沉積膜之所要平均應力特性的優化組合,同時維持晶圓之下的「暗區(dark space)」,亦即無電漿區。使用標記1及標記2基板支撐件進行將AlN膜沉積在晶圓上之實驗。相關製程條件展示於表2中。
圖5展示與使用本發明之標記1及標記2平台獲得之晶圓徑向位置有關的應力分佈。曲線50展示使用標記1平台獲得之應力分佈,且曲線52展示使用標記2平台獲得之應力分佈。可見,兩種情況中之平均應力為適度地拉張,其中標記2平台在經沉積的AIN膜中引起稍微更大的拉張平均應力。跨越膜之應力的變化對於標記1平台為約140MPa,且對於標記2平台為約100MPa。比較而言,使用習知平坦平台沉積之AIN膜展現跨越膜之約250MPa的應力變化。
已注意到,影響沉積膜中之應力非均勻性的另一因素為跨越晶圓之非徑向分量的存在。在一些情況下,已發現,可存在自晶圓基板之一半至另一半的很大的應力變化。圖6展示自晶圓之一半至另一半展現非對稱輪廓的應力分佈60。在不希望受限於任何特定理論或局面的情況下,咸信不對稱係可能歸咎於整個腔室中之電漿電位的很小的變化。晶圓表面處之電位的1-2V的變化可導致約為100MPa之應力差。實際上,歸咎於硬體中之小的不對稱,難以避免此規則下的電壓變化。此問題可被使用本發明之基板支撐件及在沉積製程期間旋轉晶圓攻克。旋轉可
以多種方式進行,不過較佳地為,晶圓在製程期間經受整個360度旋轉。雖然原則上可能在沉積期間連續旋轉晶圓,但一個實際解決方案為,在幾個步驟中沉積膜,並在沉積步驟之間旋轉晶圓。此產生跨越晶圓之平均效應,但改良厚度均勻性及應力均勻性。圖7展示具有位於平台中心之圓盤72的階梯式平台70,圓盤72在沉積步驟之間升起並旋轉晶圓。此為其中晶圓可經由沉積製程旋轉之便利方式。圖8展示與使用圖7所示基板支撐件獲得之晶圓徑向位置有關的應力分佈80。可見,在跨越晶圓之應力之相對小的變化(約90MPa)的情況下獲得極佳的幾乎完全對稱的輪廓。
本發明可應用於包括其他金屬氮化物的一系列膜。本發明特別適用於其中公差要求嚴格、尤其其中要求沉積膜之應力為高度均勻的沉積製程。
30:設備
32:腔室
34:直流磁控裝置/磁控裝置
34a:目標背襯板
34b:磁體
36:目標
38:基板支撐件
40:直流電力供應/電力供應
42:射頻電力供應/電力供應
44:控制器
Claims (17)
- 一種用於藉由一沉積製程形成一膜的直流磁控濺射設備,該設備包含:一腔室,該腔室於其中界定一製程空間(process space);一基板支撐件,其定位於該腔室內;一基板,其定位於暴露至該製程空間之該基板支撐件上且該膜係待被沉積於該基板上;一直流磁控管,其包含安置於該腔室內該基板上方之一陰極,一直流電力供應連接至該陰極且磁體鄰近於該陰極;以及一電信號供應裝置,其用於供應一電偏壓信號,該電偏壓信號在使用中致使離子轟擊位於該基板支撐件上之該基板;其中該基板支撐件包含由一邊緣區域圍繞之一中心區域,該中心區域具有一平台(plateau),該邊緣區域具有一面朝上表面(upwardly facing surface),且該中心區域之該平台相對於該邊緣區域之該面朝上表面抬高,其中該中心區域之該平台之一直徑與該邊緣區域之一直徑之一比率係自60/194至114/194,且定位於該基板支撐件上之該基板具有:(a)一中心部分,其係經安置以接觸該基板支撐件之該中心區域之該平台,及(b)一最外圍部分(outermost peripheral portion),其覆蓋及延伸超出該基板支撐件之該邊緣區域之該面朝上 表面,其中該基板之該最外圍部分與該基板支撐件之該邊緣區域之該面朝上表面之間並無直接接觸,使得該基板之該最外圍部分與該基板支撐件完全間隔開。
- 如請求項1之設備,其中該基板支撐件包含一自該邊緣區域通向該中心區域之階部。
- 如請求項2之設備,其中該階部具有一0.1至1.0mm範圍之高度。
- 如請求項1之設備,其中該中心區域之該平台界定該基板抵靠(lies against)之該基板支撐件之一實質上平坦的最上層表面(uppermost surface)。
- 如請求項1之設備,其中該電信號供應裝置係一射頻電源,其操作地連接至該基板支撐件且經組態以提供一射頻電力作為該電偏壓信號。
- 如請求項1之設備,其中該直流磁控管可為一脈衝直流磁控管。
- 如請求項1之設備,其包含一用於在膜沉積期間旋轉該基板之旋轉裝置。
- 如請求項2之設備,其中該階部具有一0.2至0.5mm範圍之高度。
- 如請求項1之設備,其中該基板係一平坦基板且跨越該平台之一整個寬度接觸該基板支撐件。
- 如請求項1之設備,其中一暗區(dark space)係形成於接近該面朝上表面與該基板之該最外圍部分之間的該中心區域之該面朝上表面上方。
- 如請求項1之設備,其中該陰極包括一背襯板及一目標,其中該目標係安置於該腔室之該製程空間中該背襯板之一第一側上,且該等磁體係安置於該腔室之外側相對於該目標之該背襯板之一第二側上。
- 一種用於藉由一沉積製程形成一膜的脈衝直流磁控濺射設備,該設備包含:一腔室,該腔室於其中界定一製程空間;一基板支撐件,其定位於該腔室內;一基板,其定位於暴露至該製程空間之該基板支撐件上且該膜係待被沉積於該基板上;一脈衝直流磁控管,其包含安置於該腔室內該基板上方之一陰極,一直流電力供應連接至該陰極且經組態以供應一脈衝直流電力至該陰極,且磁體鄰近於該陰極;以及一電信號供應裝置,其用於供應一電偏壓信號,該電偏壓信號在使用中致使離子轟擊位於該基板支撐件上之該基板;其中該基板支撐件包含由一邊緣區域圍繞之一中心區域,該中心區域具有一平台,該邊緣區域具有一面朝上表面,且該中心區域之該平台相對於該邊緣區域之該面朝上表面抬高,其中該中心區域之該平台之一直徑與該邊緣區域之一直徑之一比率係自60/194至114/194,且定位於該基板支撐件上之該基板具有:(a)一中心部分,其係經安置以接觸該基板支撐件之該中心區域之該平台,及(b)一最外圍部分,其覆蓋及延伸超出該基板支撐件 之該邊緣區域,其中該基板之該最外圍部分與該基板支撐件之該邊緣區域之該面朝上表面之間並無直接接觸,使得該基板之該最外圍部分與該基板支撐件完全間隔開,且其中該基板支撐件包含自該邊緣區域通向該中心區域之一階部,該階部具有0.1至1.0mm範圍之一高度。
- 如請求項12之設備,其中該階部具有一0.2至0.5mm範圍之高度。
- 如請求項12之設備,其中該電信號供應裝置係一射頻電源,其操作地連接至該基板支撐件且經組態以提供一射頻電力作為該電偏壓信號。
- 如請求項12之設備,其中該基板係一平坦基板且跨越該平台之一整個寬度接觸該基板支撐件。
- 如請求項12之設備,其中一暗區係形成於接近該面朝上表面與該基板之該最外圍部分之間的該中心區域之該面朝上表面上方。
- 如請求項12之設備,其中該陰極包括一背襯板及一目標,其中該目標係安置於該腔室之該製程空間中該背襯板之一第一側上,且該等磁體係安置於該腔室之外側相對於該目標之該背襯板之一第二側上。
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